中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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浏览/检索结果: 共4条,第1-4条 帮助

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Photoluminescence characteristics of gaassbn/gaas epilayers lattice-matched to gaas substrates 期刊论文  iSwitch采集
Solid state communications, 2004, 卷号: 132, 期号: 10, 页码: 707-711
作者:  
Bian, LF;  Jiang, DS;  Tan, PH;  Lu, SL;  Sun, BQ
收藏  |  浏览/下载:28/0  |  提交时间:2019/05/12
Photoluminescence characteristics of GaAsSbN/GaAs epilayers lattice-matched to GaAs substrates 期刊论文  OAI收割
solid state communications, 2004, 卷号: 132, 期号: 10, 页码: 707-711
作者:  
Tan PH;  Jiang DS
收藏  |  浏览/下载:164/55  |  提交时间:2010/03/09
The effect of inserting strain-compensated ganas layers on the luminescence properties of gainnas/gaas quantum well 期刊论文  iSwitch采集
Journal of crystal growth, 2003, 卷号: 250, 期号: 3-4, 页码: 339-344
作者:  
Bian, LF;  Jiang, DS;  Lu, SL;  Huang, JS;  Chang, K
收藏  |  浏览/下载:30/0  |  提交时间:2019/05/12
The effect of inserting strain-compensated GaNAs layers on the luminescence properties of GaInNAs/GaAs quantum well 期刊论文  OAI收割
journal of crystal growth, 2003, 卷号: 250, 期号: 3-4, 页码: 339-344
作者:  
Jiang DS
收藏  |  浏览/下载:68/0  |  提交时间:2010/08/12