机构

• 苏州纳米技术与纳米仿... [5]
• 地理科学与资源研究所 [1]

采集方式

• OAI收割 [6]

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浏览/检索结果: 共6条，第1-6条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 A systematic review of the progress of research on comprehensive benefit assessment of national-level ecological protection projects in China 期刊论文  OAI收割 ENVIRONMENTAL IMPACT ASSESSMENT REVIEW, 2025, 卷号: 112, 页码: 107816 作者:  He, Meixin;  Xu, Jie;  Xiao, Yu;  Gu, Xintian;  Pang, Qi   |  收藏  |  浏览/下载：11/0  |  提交时间：2025/03/18 Comprehensive benefits assessment  National Ecological Protection Project (EPPs)  Intrinsic mechanisms  Sustainable development goals   Room-temperature electrically pumped InGaN-based microdisk laser grown on Si 期刊论文  OAI收割 OPTICS EXPRESS, 2018 作者:  Zhou, Yu(周宇);  Liu, Jianping(刘建平);  Feng, Meixin(冯美鑫);  Zhang, Liqun(张立群);  Sun, Xiaojuan   |  收藏  |  浏览/下载：91/0  |  提交时间：2019/03/27 On-wafer fabrication of cavity mirrors for InGaN-based laser diode grown on Si 期刊论文  OAI收割 SCIENTIFIC REPORTS, 2018 作者:  He, Junlei(何俊蕾);  Feng, Meixin(冯美鑫);  Zhong, Yaozong;  Wang, Jin(王锦);  Zhou, Rui   |  收藏  |  浏览/下载：92/0  |  提交时间：2019/03/27 Unintentional incorporation of Ga in the nominal AlN spacer of AlInGaN/AlN/GaN Heterostructure 期刊论文  OAI收割 JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2018 作者:  Dai, Shujun(戴淑君);  Gao, Hongwei(高宏伟);  Zhou, Yu(周宇);  Zhong, Yaozong;  Wang, Jin   |  收藏  |  浏览/下载：63/0  |  提交时间：2019/03/27 p-GaN Gate Enhancement-Mode HEMT Through a High Tolerance Self-Terminated Etching Process 期刊论文  OAI收割 IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2017 作者:  Zhou, Yu（周宇）;  Zhong, Yaozong;  Gao, Hongwei（高宏伟）;  Dai, Shujun   |  收藏  |  浏览/下载：53/0  |  提交时间：2018/02/05 Self-terminated etching of GaN with a high selectivity over AlGaN under inductively coupled Cl-2/N-2/O-2 plasma with a low-energy ion bombardment 期刊论文  OAI收割 APPLIED SURFACE SCIENCE, 2017 作者:  Zhong, Yaozong;  Yu Zhou;  Gao, Hongwei（高宏伟）;  Dai, Shujun（戴淑君）;  He, Junlei（何俊蕾）   |  收藏  |  浏览/下载：66/0  |  提交时间：2018/02/06