中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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Effect of post oxidation annealing in nitric oxide on interface properties of 4H-SiC/SiO2after high temperature oxidation 期刊论文  OAI收割
Journal of Semiconductors, 2015, 卷号: 36, 期号: 9
作者:  
Li, Yanyue;  Deng, Xiaochuan;  Liu, Yunfeng;  Zhao, Yanli;  Li, Chengzhan
收藏  |  浏览/下载:15/0  |  提交时间:2016/11/03
AIGaN/GaN HEMTs Power Amplifier MIC with Power Combining at C-Band 期刊论文  OAI收割
半导体学报, 2007, 卷号: 28, 期号: 4, 页码: 514-517
Yao Xiaojiang; Li Bin; Chen Yanhu; Chen Xiaojuan; Wei Ke; Li Chengzhan; Luo Weijun; WANG Xiaoliang; Liu Dan; Liu Guoguo; Liu Xinyu
收藏  |  浏览/下载:164/11  |  提交时间:2010/11/23
Structure optimization of field-plate AlGaN/GaN HEMTs 期刊论文  OAI收割
microelectronics journal, 2007, 卷号: 38, 期号: 2, 页码: 272-274
Luo WJ (Luo Weijun); Wei K (Wei Ke); Chen XJ (Chen Xiaojuan); Li CZ (Li Chengzhan); Liu XY (Liu Xinyu); Wang XL (Wang Xiaoliang)
收藏  |  浏览/下载:142/0  |  提交时间:2010/03/29
GaN