机构

• 新疆理化技术研究所 [6]

采集方式

• OAI收割 [6]

内容类型

• 期刊论文 [6]

发表日期

• 2021 [2]
• 2020 [4]

学科主题

筛选

浏览/检索结果: 共6条，第1-6条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Analysis of Dark Signal Degradation Caused by 1 MeV Neutron Irradiation on Backside-Illuminated CMOS Image Sensors 期刊论文  OAI收割 CHINESE JOURNAL OF ELECTRONICS, 2021, 卷号: 30, 期号: 1, 页码: 180-184 作者:  Liu, BK (Liu Bingkai)[ 1,2,3 ];  Li, YD (Li Yudong)[ 1,2 ];  Wen, L (Wen Lin)[ 1,2 ];  Zhou, D (Zhou Dong)[ 1,2 ];  Feng, J (Feng Jie)[ 1,2 ]   |  收藏  |  浏览/下载：30/0  |  提交时间：2021/05/10 Backside‐  illuminated CMOS image sensors  Dark signal behaviors  Displacement damage effects  Neutron irradiation   Role of the oxide trapped charges in charge coupled device ionizing radiation-induced dark signal 期刊论文  OAI收割 RADIATION PHYSICS AND CHEMISTRY, 2021, 卷号: 189, 期号: 12, 页码: 1-5 作者:  Li, YD (Li, Yudong);  Liu, BK (Liu, Bingkai);  Wen, L (Wen, Lin);  Wei, Y (Wei, Ying);  Zhou, D (Zhou, Dong)   |  收藏  |  浏览/下载：47/0  |  提交时间：2021/10/14 Radiation effectsTotal ionizing dose (TID)Charge coupled device (CCD)Dark signalOxide trapped charges   Displacement damage effects induced by fast neutron in backside-illuminated CMOS image sensors 期刊论文  OAI收割 JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY, 2020, 卷号: 57, 期号: 9, 页码: 1015-1021 作者:  Zhang, X (Zhang, Xiang)[ 1,2,3 ];  Li, YD (Li, Yudong)[ 1,2 ];  Wen, L (Wen, Lin)[ 1,2 ];  Feng, J (Feng, Jie)[ 1,2 ];  Zhou, D (Zhou, Dong)[ 1,2 ]   |  收藏  |  浏览/下载：17/0  |  提交时间：2020/12/09 14-MeV neutron  neutron irradiation  radiation damage  radiation effect   A study of hot pixels induced by proton and neutron irradiations in charge coupled devices 期刊论文  OAI收割 RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2020, 卷号: 175, 期号: 5-6, 页码: 540-550 作者:  Liu, BK (Liu, Bingkai)[ 1,2,3 ];  Li, YD (Li, Yudong)[ 1,2 ];  Wen, L (Wen, Lin)[ 1,2 ];  Zhou, D (Zhou, Dong)[ 1,2 ];  Feng, J (Feng, Jie)[ 1,2 ]   |  收藏  |  浏览/下载：29/0  |  提交时间：2020/07/06 Charge coupled devices (CCDs)  proton irradiation  neutron irradiation  hot pixels  displacement damage effects   Single-Event Effects in Pinned Photodiode CMOS Image Sensors: SET and SEL 期刊论文  OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2020, 卷号: 67, 期号: 8, 页码: 1861-1868 作者:  Cai, YL (Cai, Yulong)[ 1,2 ];  Wen, L (Wen, Lin)[ 3 ];  Li, YD (Li, Yudong)[ 3 ];  Guo, Q (Guo, Qi)[ 3 ];  Zhou, D (Zhou, Dong)[ 3 ]   |  收藏  |  浏览/下载：19/0  |  提交时间：2020/09/09 Complementary metal-oxide-semiconductor  (CMOS) image sensors (CIS)  heavy ions  pulsed laser  single-event latchup (SEL)  single-event transient (SET)   Study of dark current random telegraph signal in proton-irradiated backside illuminated CMOS image sensors 期刊论文  OAI收割 RESULTS IN PHYSICS, 2020, 卷号: 19, 期号: 12, 页码: 1-7 作者:  Liu, BK (Liu, Bingkai)[ 1,2,3 ];  Li, YD (Li, Yudong)[ 1,2 ];  Wen, L (Wen, Lin)[ 1,2 ];  Zhou, D (Zhou, Dong)[ 1,2 ];  Feng, J (Feng, Jie)[ 1,2 ]   |  收藏  |  浏览/下载：20/0  |  提交时间：2021/03/19 Backside illuminated CMOS image sensor  Random telegraph signal  Radiation effects  Proton irradiation  Theoretical calculation