中国科学院机构知识库网格系统: 检索

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	Full electrical manipulation of perpendicular exchange bias in ultrathin antiferromagnetic film with epitaxial strain 期刊论文 OAI收割 NATURE COMMUNICATIONS, 2024, 卷号: 15, 期号: 1, 页码: 4734 作者: Qi, J; Zhao, YC \| 收藏 \| 浏览/下载：2/0 \| 提交时间：2026/03/17
	Harnessing Cross-strand π-π Interlocking for Synergistic Enhancement of Immune Checkpoint Blocking and Ferroptosis 期刊论文 OAI收割 NANO LETTERS, 2024, 卷号: 24, 期号: 48, 页码: 15396-15405 作者: Zhang, LM; Wang, X; Zhao, JE; Qi, Y; Han, K \| 收藏 \| 浏览/下载：1/0 \| 提交时间：2026/03/17
	Analysis of Dark Signal Degradation Caused by 1 MeV Neutron Irradiation on Backside-Illuminated CMOS Image Sensors 期刊论文 OAI收割 CHINESE JOURNAL OF ELECTRONICS, 2021, 卷号: 30, 期号: 1, 页码: 180-184 作者: Liu, BK (Liu Bingkai)[ 1,2,3 ]; Li, YD (Li Yudong)[ 1,2 ]; Wen, L (Wen Lin)[ 1,2 ]; Zhou, D (Zhou Dong)[ 1,2 ]; Feng, J (Feng Jie)[ 1,2 ] \| 收藏 \| 浏览/下载：71/0 \| 提交时间：2021/05/10 Backside‐ illuminated CMOS image sensors Dark signal behaviors Displacement damage effects Neutron irradiation
	Role of the oxide trapped charges in charge coupled device ionizing radiation-induced dark signal 期刊论文 OAI收割 RADIATION PHYSICS AND CHEMISTRY, 2021, 卷号: 189, 期号: 12, 页码: 1-5 作者: Li, YD (Li, Yudong); Liu, BK (Liu, Bingkai); Wen, L (Wen, Lin); Wei, Y (Wei, Ying); Zhou, D (Zhou, Dong) \| 收藏 \| 浏览/下载：80/0 \| 提交时间：2021/10/14 Radiation effectsTotal ionizing dose (TID)Charge coupled device (CCD)Dark signalOxide trapped charges
	Displacement damage effects induced by fast neutron in backside-illuminated CMOS image sensors 期刊论文 OAI收割 JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY, 2020, 卷号: 57, 期号: 9, 页码: 1015-1021 作者: Zhang, X (Zhang, Xiang)[ 1,2,3 ]; Li, YD (Li, Yudong)[ 1,2 ]; Wen, L (Wen, Lin)[ 1,2 ]; Feng, J (Feng, Jie)[ 1,2 ]; Zhou, D (Zhou, Dong)[ 1,2 ] \| 收藏 \| 浏览/下载：38/0 \| 提交时间：2020/12/09 14-MeV neutron neutron irradiation radiation damage radiation effect
	A study of hot pixels induced by proton and neutron irradiations in charge coupled devices 期刊论文 OAI收割 RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2020, 卷号: 175, 期号: 5-6, 页码: 540-550 作者: Liu, BK (Liu, Bingkai)[ 1,2,3 ]; Li, YD (Li, Yudong)[ 1,2 ]; Wen, L (Wen, Lin)[ 1,2 ]; Zhou, D (Zhou, Dong)[ 1,2 ]; Feng, J (Feng, Jie)[ 1,2 ] \| 收藏 \| 浏览/下载：49/0 \| 提交时间：2020/07/06 Charge coupled devices (CCDs) proton irradiation neutron irradiation hot pixels displacement damage effects
	Single-Event Effects in Pinned Photodiode CMOS Image Sensors: SET and SEL 期刊论文 OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2020, 卷号: 67, 期号: 8, 页码: 1861-1868 作者: Cai, YL (Cai, Yulong)[ 1,2 ]; Wen, L (Wen, Lin)[ 3 ] \| 收藏 \| 浏览/下载：45/0 \| 提交时间：2020/09/09 Complementary metal-oxide-semiconductor (CMOS) image sensors (CIS) heavy ions pulsed laser single-event latchup (SEL) single-event transient (SET)
	Study of dark current random telegraph signal in proton-irradiated backside illuminated CMOS image sensors 期刊论文 OAI收割 RESULTS IN PHYSICS, 2020, 卷号: 19, 期号: 12, 页码: 1-7 作者: Liu, BK (Liu, Bingkai)[ 1,2,3 ]; Li, YD (Li, Yudong)[ 1,2 ]; Wen, L (Wen, Lin)[ 1,2 ]; Zhou, D (Zhou, Dong)[ 1,2 ]; Feng, J (Feng, Jie)[ 1,2 ] \| 收藏 \| 浏览/下载：45/0 \| 提交时间：2021/03/19 Backside illuminated CMOS image sensor Random telegraph signal Radiation effects Proton irradiation Theoretical calculation
	Electron irradiation-induced defects and photoelectric properties of Te-doped GaSb 期刊论文 OAI收割 JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2019, 卷号: 132, 期号: 9, 页码: 26-30 作者: Wang, DK (Wang, Dengkui)[ 1 ]; Chen, BK (Chen, Bingkun)[ 1 ]; Wei, ZP (Wei, Zhipeng)[ 1 ]; Fang, X (Fang, Xuan)[ 1 ]; Tang, JL (Tang, Jilong)[ 1 ] \| 收藏 \| 浏览/下载：100/0 \| 提交时间：2019/07/23 GaSb Electron irradiation Photoluminescence Defects