机构

• 半导体研究所 [3]

采集方式

• OAI收割 [3]

内容类型

• 期刊论文 [3]

发表日期

• 2015 [1]
• 2013 [2]

学科主题

• 半导体材料 [3]

筛选

浏览/检索结果: 共3条，第1-3条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Effects of a GaN cap layer on the reliability of AlGaN/GaN Schottky diodes 期刊论文  OAI收割 phys. status solidi a, 2015, 卷号: 212, 期号: 5, 页码: 1158-1161 He Kang; Quan Wang; Hongling Xiao; Cuimei Wang; Lijuan Jiang; Chun Feng; Hong Chen; Haibo Yin; Shenqi Qu; Enchao Peng; Jiamin Gong; Xiaoliang Wang; Baiquan Li; Zhanguo Wang; Xun Hou 收藏  |  浏览/下载：38/0  |  提交时间：2016/03/29 Tunable density of two-dimensional electron gas in GaN-based heterostructures The effects of buffer acceptor and channel width 期刊论文  OAI收割 journal of applied physics, 2013, 卷号: 114, 期号: 15, 页码: 4507 Enchao Peng, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang, Shenqi Qu, He Kang, Xun Hou and Zhanguo Wang 收藏  |  浏览/下载：31/0  |  提交时间：2014/03/18 Investigation of the current collapse induced in InGaN back barrier AlGaN/GaN high electron mobility transistors 期刊论文  OAI收割 journal of semiconductors, 2013, 卷号: 34, 期号: 10, 页码: 104002 Xiaojia, Wan; Xiaoliang, Wang; Hongling, Xiao; Chun, Feng; Lijuan, Jiang; Shenqi, Qu; Zhanguo, Wang; Xun, Hou 收藏  |  浏览/下载：23/0  |  提交时间：2014/05/16