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CAS IR Grid
机构
宁波材料技术与工程... [10]
金属研究所 [2]
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OAI收割 [12]
内容类型
期刊论文 [12]
发表日期
2021 [3]
2020 [4]
2019 [5]
学科主题
Materials ... [1]
Physics [1]
Science & ... [1]
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Carrier localization and defect-insensitive optical behaviors of ultraviolet multiple quantum wells grown on patterned AlN nucleation layer
期刊论文
OAI收割
JOURNAL OF ALLOYS AND COMPOUNDS, 2021, 卷号: 861
作者:
Chen, Li
;
Dai, Yijun
;
Li, Liang
;
Jiang, Jiean
;
Xu, Houqiang
  |  
收藏
  |  
浏览/下载:27/0
  |  
提交时间:2021/12/01
Self-powered ultraviolet MSM photodetectors with high responsivity enabled by a lateral n(+)/n(-) homojunction from opposite polarity domains
期刊论文
OAI收割
OPTICS LETTERS, 2021, 卷号: 46, 期号: 13, 页码: 3203-3206
作者:
Guo, Chenyu
;
Guo, Wei
;
Dai, Yijun
;
Xu, Houqiang
;
Chen, Li
  |  
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2021/12/01
SPECTRAL RESPONSE
GAN
Investigation of quantum structure in N-polar deep-ultraviolet light-emitting diodes
期刊论文
OAI收割
JOURNAL OF APPLIED PHYSICS, 2021, 卷号: 129, 期号: 13
作者:
Jia, Hongfeng
;
Yu, Huabin
;
Kang, Yang
;
Ren, Zhongjie
;
Memon, Muhammad Hunain
  |  
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2021/12/01
ENHANCED PERFORMANCE
PARAMETERS
WELL
FACE
Polarity Control and Nanoscale Optical Characterization of AlGaN-Based Multiple-Quantum-Wells for Ultraviolet C Emitters
期刊论文
OAI收割
ACS APPLIED NANO MATERIALS, 2020, 卷号: 3, 期号: 6, 页码: 5335-5342
作者:
Xu, Houqiang
;
Jiang, Jie'an
;
Dai, Yijun
;
Cui, Mei
;
Li, Kuang-hui
  |  
收藏
  |  
浏览/下载:62/0
  |  
提交时间:2020/12/16
LIGHT-EMITTING-DIODES
GAN GROWTH
PARAMETERS
WATER
Polarity control and fabrication of lateral polarity structures of III-nitride thin films and devices: progress and prospects
期刊论文
OAI收割
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2020, 卷号: 53, 期号: 48
作者:
Guo, Wei
;
Xu, Houqiang
;
Chen, Li
;
Yu, Huabin
;
Jiang, Jie'an
  |  
收藏
  |  
浏览/下载:43/0
  |  
提交时间:2020/12/16
INVERSION DOMAIN BOUNDARIES
MOLECULAR-BEAM EPITAXY
C-GAN DOMAINS
GALLIUM NITRIDE
N-POLARITY
2ND-HARMONIC GENERATION
SURFACE-MORPHOLOGY
GAAS FILMS
GROWTH
ALN
Efficiency Droop Suppression and Light Output Power Enhancement of Deep Ultraviolet Light-Emitting Diode by Incorporating Inverted-V-Shaped Quantum Barriers
期刊论文
OAI收割
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 卷号: 67, 期号: 11, 页码: 4958-4962
作者:
Kang, Yang
;
Yu, Huabin
;
Ren, Zhongjie
;
Xing, Chong
;
Liu, Zhongling
  |  
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2021/12/01
POLARIZATION
PERFORMANCE
Polarity control and fabrication of lateral polarity structures of III-nitride thin films and devices: progress and prospects
期刊论文
OAI收割
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2020, 卷号: 53, 期号: 48
作者:
Guo, Wei
;
Xu, Houqiang
;
Chen, Li
;
Yu, Huabin
;
Jiang, Jie'an
  |  
收藏
  |  
浏览/下载:27/0
  |  
提交时间:2021/12/01
INVERSION DOMAIN BOUNDARIES
MOLECULAR-BEAM EPITAXY
C-GAN DOMAINS
GALLIUM NITRIDE
N-POLARITY
2ND-HARMONIC GENERATION
SURFACE-MORPHOLOGY
GAAS FILMS
GROWTH
ALN
AsP/InSe Van der Waals Tunneling Heterojunctions with Ultrahigh Reverse Rectification Ratio and High Photosensitivity
期刊论文
OAI收割
ADVANCED FUNCTIONAL MATERIALS, 2019, 卷号: 29, 期号: 12, 页码: 9
作者:
Wu, Feng
;
Xia, Hui
;
Sun, Haiding
;
Zhang, Junwei
;
Gong, Fan
  |  
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2021/02/02
backward diodes
photodiodes
rectification
tunneling
van der Waals heterojunctions
AsP/InSe Van der Waals Tunneling Heterojunctions with Ultrahigh Reverse Rectification Ratio and High Photosensitivity
期刊论文
OAI收割
ADVANCED FUNCTIONAL MATERIALS, 2019, 卷号: 29, 期号: 12, 页码: 9
作者:
Wu, Feng
;
Xia, Hui
;
Sun, Haiding
;
Zhang, Junwei
;
Gong, Fan
  |  
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2021/02/02
backward diodes
photodiodes
rectification
tunneling
van der Waals heterojunctions
Three-dimensional band diagram in lateral polarity junction III-nitride heterostructures
期刊论文
OAI收割
OPTICA, 2019, 卷号: 6, 期号: 8, 页码: 1058-1062
作者:
Guo, Wei
;
Mitra, Somak
;
Jiang, Jie'an
;
Xu, Houdiang
;
Sheikhi, Moheb
  |  
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2019/12/18
POLARIZATION