机构

• 半导体研究所 [4]

采集方式

• OAI收割 [4]

内容类型

• 期刊论文 [4]

发表日期

• 2012 [1]
• 2011 [3]

学科主题

• 半导体材料 [4]

筛选

浏览/检索结果: 共4条，第1-4条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Development of vertical 32" LPCVD system for fast epitaxial growth on 4H-SiC 期刊论文  OAI收割 materials science forum, 2012, 卷号: 717-720, 页码: 105-108 Zhao, Wanshun; Sun, Guosheng; Wu, Hailei; Yan, Guoguo; Zheng, Liu; Dong, Lin; Wang, Lei; Liu, Xingfang; Yang, Lijun 收藏  |  浏览/下载：29/0  |  提交时间：2013/04/22 Effect of annealing process on the surface roughness in multiple Al implanted4H-SiC 期刊论文  OAI收割 journal of semiconductors, 2011, 卷号: 32, 期号: 7, 页码: 72002 Wu, Hailei; Sun, Guosheng; Yang, Ting; Yan, Guoguo; Wang, Lei; Zhao, Wanshun; Liu, Xingfang; Zeng, Yiping; Wen, Jialiang 收藏  |  浏览/下载：31/0  |  提交时间：2012/06/14 Aluminum  Annealing  Ion implantation  Pressure effects  Semiconducting silicon compounds  Silicon carbide  Surface roughness   Multi-wafer3C-SiC thin films grown on Si(100) in a vertical HWLPCVD reactor 期刊论文  OAI收割 journal of semiconductors, 2011, 卷号: 32, 期号: 6, 页码: 63001 Yan, Guoguo; Sun, Guosheng; Wu, Hailei; Wang, Lei; Zhao, Wanshun; Liu, Xingfang; Zeng, Yiping; Wen, Jialiang 收藏  |  浏览/下载：28/0  |  提交时间：2012/06/14 Chemical vapor deposition  Deposition  Electric resistance  Epitaxial growth  Film growth  Sheet resistance  Silicon carbide  Silicon wafers   High-quality homoepitaxial layers grown on4H-SiC at a high growth rate by vertical LPCVD 期刊论文  OAI收割 journal of semiconductors, 2011, 卷号: 32, 期号: 4, 页码: 43005 Wu, Hailei; Sun, Guosheng; Yang, Ting; Yan, Guoguo; Wang, Lei; Zhao, Wanshun; Liu, Xingfang; Zeng, Yiping; Wen, Jialiang 收藏  |  浏览/下载：28/0  |  提交时间：2012/06/14 Epitaxial growth  Ethylene  Growth rate  Morphology  Surface roughness