中国科学院机构知识库网格系统: 检索

中国科学院机构知识库网格

Chinese Academy of Sciences Institutional Repositories Grid

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浏览/检索结果: 共5条，第1-5条

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	Enhancing thermal properties of few-layer boron nitride by high-k Al2O3 capping layer 期刊论文 OAI收割 Journal of Alloys and Compounds, 2019, 卷号: 797, 页码: 262-268 作者: Y.X.Chen; K.L.Li; Z.W.Li; S.Q.Hu; X.J.Sun \| 收藏 \| 浏览/下载：23/0 \| 提交时间：2020/08/24 Boron nitride,Thermal conductivity,Raman spectroscopy,graphene,conductivity,deposition,nanosheets
	Van der Waals Epitaxy: A new way for growth of III-nitrides 期刊论文 OAI收割 Science China-Technological Sciences, 2019, 卷号: 63, 期号: 3, 页码: 528-530 作者: Y.Chen; Y.P.Jia; Z.M.Shi; X.J.Sun; D.B.Li \| 收藏 \| 浏览/下载：32/0 \| 提交时间：2020/08/24 gan,layer,aln,Engineering,Materials Science
	Modified band alignment at multilayer MoS2/Al2O3 heterojunctions by nitridation treatment 期刊论文 OAI收割 Journal of Alloys and Compounds, 2019, 卷号: 793, 页码: 599-603 作者: X.K.Liu; K.L.Li; X.J.Sun; Z.M.Shi; Z.H.Huang \| 收藏 \| 浏览/下载：40/0 \| 提交时间：2020/08/24 Multilayer MoS2,Al2O3 surface,NH3 treatment,Band alignment,field-effect transistor,layer mos2,Chemistry,Materials Science,Metallurgy & Metallurgical Engineering
	Construction of van der Waals substrates for largely mismatched heteroepitaxy systems using first principles 期刊论文 OAI收割 Science China-Physics Mechanics & Astronomy, 2019, 卷号: 62, 期号: 12, 页码: 7 作者: Z.M.Shi; X.J.Sun; Y.P.Jia; X.K.Liu; S.L.Zhang \| 收藏 \| 浏览/下载：42/0 \| 提交时间：2020/08/24 van der Waals epitaxy,2D materials,first principles,light-emitting-diodes,phase epitaxy growth,algan/gan hemts,boron-nitride,gan,graphene,layer,nanosheets,crystals,semiconductor,Physics
	Suppressing the compositional non-uniformity of AlGaN grown on a HVPE-AlN template with large macro-steps 期刊论文 OAI收割 Crystengcomm, 2019, 卷号: 21, 期号: 33, 页码: 4864-4873 作者: K.Jiang; X.J.Sun; J.W.Ben; Z.M.Shi; Y.P.Jia \| 收藏 \| 浏览/下载：35/0 \| 提交时间：2020/08/24 potential fluctuations,gan films,alxga1-xn,sapphire,quality,localization,relaxation,inversion