中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
新疆理化技术研究所 [12]
上海药物研究所 [2]
近代物理研究所 [2]
深圳先进技术研究院 [1]
微电子研究所 [1]
植物研究所 [1]
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采集方式
OAI收割 [19]
内容类型
期刊论文 [17]
会议论文 [2]
发表日期
2023 [1]
2022 [2]
2021 [2]
2020 [2]
2019 [3]
2018 [5]
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学科主题
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Self-Immolated Nanoadjuvant for In Situ Vaccination Immunotherapy of Colorectal Cancer
期刊论文
OAI收割
ADVANCED HEALTHCARE MATERIALS, 2023, 页码: 13
作者:
Wang, Weiqi
;
Zhu, Qiwen
;
Jin, Yilan
;
Gao, Jing
;
Li, Jianan
  |  
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2023/10/17
antigen presentation
immunogenic cell death
nanoadjuvant
photodynamic therapy
vaccination immunotherapy
Engineered bioorthogonal POLY-PROTAC nanoparticles for tumour-specific protein degradation and precise cancer therapy
期刊论文
OAI收割
NATURE COMMUNICATIONS, 2022, 卷号: 13, 期号: 1, 页码: 14
作者:
Gao, Jing
;
Hou, Bo
;
Zhu, Qiwen
;
Yang, Lei
;
Jiang, Xingyu
  |  
收藏
  |  
浏览/下载:60/0
  |  
提交时间:2022/08/30
1/f Noise responses of Ultra-Thin Body and Buried oxide FD-SOI PMOSFETs under total ionizing dose irradiation
期刊论文
OAI收割
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2022, 卷号: 176, 期号: 11-12, 页码: 1202-1214
作者:
Zhang, RQ (Zhang, Ruiqin) [1] , [2] , [3]
;
Zheng, QW (Zheng, Qiwen) [1] , [2]
;
Lu, W (Lu, Wu) [1] , [2]
;
Cui, JW (Cui, Jiangwei) [1] , [2]
;
Li, YD (Li, Yudong) [1] , [2]
  |  
收藏
  |  
浏览/下载:36/0
  |  
提交时间:2022/04/07
Total ionizing dose irradiation
UTBB FD-SOI
1
f noise
Impact of TID on Within-Wafer Variability of Radiation-Hardened SOI Wafers
期刊论文
OAI收割
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 7, 页码: 1423-1429
作者:
Zheng, QW (Zheng, Qiwen) 1
;
Cui, JW (Cui, Jiangwei) 1
;
Yu, XF (Yu, Xuefeng) 1
;
Li, YD (Li, Yudong) 1
;
Lu, W (Lu, Wu) 1
  |  
收藏
  |  
浏览/下载:38/0
  |  
提交时间:2021/08/06
Radiation-hardened (RH)silicon-on-insulator (SOI)total ionizing dose (TID)within-wafer variability
Measurement and Evaluation of the Within-Wafer TID Response Variability on BOX Layer of SOI Technology
期刊论文
OAI收割
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 10, 页码: 2516-2523
作者:
Zheng, QW (Zheng, Qiwen) 1Cui, JW (Cui, Jiangwei) 1Yu, XF (Yu, Xuefeng) 1
;
Li, YD (Li, Yudong) 1
;
Lu, W (Lu, Wu) 1
;
He, CF (He, Chengfa) 1
;
Guo, Q (Guo, Qi) 1
  |  
收藏
  |  
浏览/下载:38/0
  |  
提交时间:2021/12/06
Threshold voltage
TestingMOSFET circuits
Transistors
Standards
Logic gates
Fluctuations
Buried oxide (BOX)
silicon-on-insulator (SOI)
total ionizing dose (TID)
Study of the influence of gamma irradiation on long-term reliability of SiC MOSFET
期刊论文
OAI收割
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2020, 卷号: 175, 期号: 5-6, 页码: 559-566
作者:
Liang, XW (Liang, Xiaowen)[ 1,2,3 ]
;
Cui, JW (Cui, Jiangwei)[ 1,2 ]
;
Zheng, QW (Zheng, Qiwen)[ 1,2 ]
;
Zhao, JH (Zhao, Jinghao)[ 1,2,3 ]
;
Yu, XF (Yu, Xuefeng)[ 1,2 ]
  |  
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2020/12/11
SiC MOSFET
total ionizing dose irradiation
time-dependent dielectric breakdown
Progressive nitrogen limitation across the Tibetan alpine permafrost region
期刊论文
OAI收割
NATURE COMMUNICATIONS, 2020, 卷号: 11, 期号: 1
作者:
Kou, Dan
;
Yang, Guibiao
;
Li, Fei
;
Feng, Xuehui
;
Zhang, Dianye
  |  
收藏
  |  
浏览/下载:45/0
  |  
提交时间:2022/03/01
Total Ionizing Dose Influence on the Single-Event Multiple-Cell Upsets in 65-nm 6-T SRAM
期刊论文
OAI收割
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 6, 页码: 892-898
作者:
Zheng, Qiwen
;
Cui, Jiangwei
;
Lu, Wu
;
Guo, Hongxia
;
Liu, Jie
  |  
收藏
  |  
浏览/下载:88/0
  |  
提交时间:2019/11/10
Single-event multiple-cell upsets (MCUs)
static random access memory
total ionizing dose (TID)
Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors
期刊论文
OAI收割
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 4, 页码: 702-709
作者:
Zheng, QW (Zheng, Qiwen)[ 1 ]
;
Cui, JW (Cui, Jiangwei)[ 1 ]
;
Xu, LW (Xu, Liewei)[ 2 ]
;
Ning, BX (Ning, Bingxu)[ 3 ]
;
Zhao, K (Zhao, Kai)[ 3 ]
  |  
收藏
  |  
浏览/下载:115/0
  |  
提交时间:2019/05/14
Back-gate biasing
forward body bias (FBB)
total ionizing dose (TID)
ultrathin body and buried oxide fully depleted silicon-on-insulator (UTBB FD-SOI)
A study on effects of total ionizing dose on hot carrier effect of PD I/O SOI PMOSFETs
期刊论文
OAI收割
RESULTS IN PHYSICS, 2019, 卷号: 13, 期号: 6, 页码: 1-5
作者:
Zhao, JH (Zhao, Jinghao)[ 1,2,3 ]
;
Zheng, QW (Zheng, Qiwen)[ 1,2 ]
;
Cui, JW (Cui, Jiangwei)[ 1,2 ]
;
Zhou, H (Zhou, Hang)[ 1,2,3 ]
;
Liang, XW (Liang, Xiaowen)[ 1,2,3 ]
  |  
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2020/03/20
Hot carrier effect
PMOS
Total ionizing dose effect