中国科学院机构知识库网格系统: 检索

浏览/检索结果: 共6条，第1-6条

帮助

条数/页：排序方式：
	Ionizing radiation effect on 10-bit bipolar A/D converter 期刊论文 OAI收割 NUCLEAR SCIENCE AND TECHNIQUES, 2010, 卷号: 21, 期号: 3, 页码: 152-156 作者: Chen Rui; Lu Wu; Ren Diyuan; Zheng Yuzhan; Wang Yiyuan 收藏 \| 浏览/下载：28/0 \| 提交时间：2012/11/29 Bipolar Analog to Digital converters (60)Co gamma Radiation ELDRS Bias condition
	Dose-rate effects of low-dropout voltage regulator at various biases 期刊论文 OAI收割 NUCLEAR SCIENCE AND TECHNIQUES, 2010, 卷号: 21, 期号: 6, 页码: 352-356 作者: Wang Yiyuan; Lu Wu; Ren Diyuan; Zheng Yuzhan; Gao Bo 收藏 \| 浏览/下载：23/0 \| 提交时间：2012/11/29 Dose rate effects ELDRS Ionizing radiation LDO voltage regulator
	Impact of doped boron concentration in emitter on high- and low-dose-rate damage in lateral PNP transistors 期刊论文 OAI收割 Journal of Semiconductors, 2010, 卷号: 31, 期号: 3 作者: Yuzhan, Zheng; Wu, Lu; Diyuan, Ren; Yiyuan, Wang; Zhikuan, Wang 收藏 \| 浏览/下载：24/0 \| 提交时间：2014/11/11
	Annealing behavior of radiation damage in JFET-input operational amplifiers 期刊论文 OAI收割 Journal of Semiconductors, 2009, 卷号: 30, 期号: 5, 页码: 60-64 作者: Zheng, Yuzhan; Lu, Wu; Ren, Diyuan; Wang, Yiyuan; Guo, Qi 收藏 \| 浏览/下载：23/0 \| 提交时间：2014/11/11 JFET-input operational amplifiers dose rate radiation damage annealing behavior
	Electron-induced damage to NPN transistors under different fluxes 期刊论文 OAI收割 NUCLEAR SCIENCE AND TECHNIQUES, 2008, 卷号: 19, 期号: 6, 页码: 333-336 作者: Zheng Yuzhan; Lu Wu; Ren Diyuan; Guo Qi; Yu Xuefeng 收藏 \| 浏览/下载：24/0 \| 提交时间：2014/11/11 Electron flux NPN transistor Radiation damage
	Compare of total-dose irradiation effects between CMOS 4000 and 54HC devices 期刊论文 OAI收割 He Jishu/Nuclear Techniques, 2008, 卷号: 31, 期号: 5, 页码: 348-351 作者: Wang Gaili; Yu Xuefeng; Ren Diyuan; Zheng Yuzhan; Sun Jing 收藏 \| 浏览/下载：12/0 \| 提交时间：2012/11/29