机构

• 近代物理研究所 [4]
• 长春光学精密机械与物... [3]
• 金属研究所 [1]
• 上海微系统与信息技术... [1]
• 高能物理研究所 [1]
• 中国科学院大学 [1]
• 更多

采集方式

• OAI收割 [9]
• iSwitch采集 [3]

内容类型

• 期刊论文 [7]
• 会议论文 [5]

发表日期

• 2018 [1]
• 2017 [3]
• 2012 [1]
• 2010 [1]
• 2006 [3]
• 2005 [1]
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学科主题

• Instrument... [1]

筛选

浏览/检索结果: 共12条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Degradation mechanisms of optoelectric properties of GaN via highly-charged Bi-209(33+) ions irradiation 期刊论文  OAI收割 APPLIED SURFACE SCIENCE, 2018, 卷号: 440, 页码: 814-820 作者:  Xian, Y. Q.;  Zhang, L. Q.;  Li, J. Y.;  Su, C. H.;  Chen, Y. G.   |  收藏  |  浏览/下载：44/0  |  提交时间：2018/05/22 GaN  Highly-charged bismuth-ion irradiation  Raman spectrum  Varying temperature photoluminescence (PL) spectrum  Optoelectric properties   Influence of highly-charged Bi-209(33+) irradiation on structure and optoelectric characteristics of GaN epilayer 期刊论文  OAI收割 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2017, 卷号: 406, 页码: 571-577 作者:  Li, Jj.;  Zhang, C. H.;  Zhang, L. Q.;  Song, Y.;  Yan, T. X.   |  收藏  |  浏览/下载：11/0  |  提交时间：2018/05/08 GaN  Highly-charged bismuth ion irradiation  AFM  XPS  Raman scattering spectrum  PL   Influence of highly-charged Bi-209(33+) irradiation on structure and optoelectric characteristics of GaN epilayer 会议论文  OAI收割 作者:  Song, Y.;  Zhang, L. Q.;  Zhang, C. H.;  Xu, C. L.;  Li, Jj.   |  收藏  |  浏览/下载：22/0  |  提交时间：2018/08/20 GaN  Highly-charged bismuth ion irradiation  AFM  XPS  Raman scattering spectrum  PL   Influence of highly-charged Bi-209(33+) irradiation on structure and optoelectric characteristics of GaN epilayer 会议论文  OAI收割 作者:  Yang, Y. T.;  Li, J. Y.;  Liu, H. P.;  Ding, Z. N.;  Yan, T. X.   |  收藏  |  浏览/下载：20/0  |  提交时间：2018/08/20 GaN  Highly-charged bismuth ion irradiation  AFM  XPS  Raman scattering spectrum  PL   Optical investigation of InAs/InP(100) quantum dots grown by gas source molecular beam epitaxy 期刊论文  OAI收割 INFRARED PHYSICS & TECHNOLOGY, 2012, 卷号: 55, 期号: 41308, 页码: 205-209 Li, SG; Gong, Q; Cao, CF; Wang, XZ; Yue, L; Liu, QB; Wang, HL; Wang, Y 收藏  |  浏览/下载：86/0  |  提交时间：2013/04/17 PL spectrum  InAs/InP quantum dot  GSMBE  Growth temperature   Structural and photoluminescence properties of aligned Sb-doped ZnO nanocolumns synthesized by the hydrothermal method (EI CONFERENCE) 会议论文  OAI收割 作者:  Wang X.;  Wang X.;  Wang X.;  Li B.;  Li B. 收藏  |  浏览/下载：22/0  |  提交时间：2013/03/25 Aligned Sb-doped ZnO nanocolumns were synthesized by a simple hydrothermal method. Based on the analyses of the X-ray diffraction and photoluminescence result  it could be confirmed that the Sb has successfully doped in the ZnO crystal lattices to form an accepter energy level. At 85 K  the recombination of the acceptor-bound exciton was predominant in PL spectrum  which was attributed to the transition of the (SbZn-2VZn) complex bound exciton. The acceptor binding energy had been calculated to be 123 meV. 2009 Published by Elsevier B.V. All rights reserved.   Synthesis and characteristics of zno-cnts nanocomposites 期刊论文  iSwitch采集 Acta physico-chimica sinica, 2006, 卷号: 22, 期号: 10, 页码: 1175-1180 作者:  Zhu Lu-Ping;  Huang Wen-Yu;  Ma Li-Li;  Fu Shao-Yun;  Yu Ying 收藏  |  浏览/下载：17/0  |  提交时间：2019/05/10 Sol method  Zno-cnts  Nanocomposite  Ir absorbence  Pl spectrum   Effect of interface on luminescence properties in ZnO/MgZnO heterostructures (EI CONFERENCE) 会议论文  OAI收割 Wei Z. P.; Lu Y. M.; Shen D. Z.; Wu C. X.; Zhang Z. Z.; Zhao D. X.; Zhang J. Y.; Fan X. W. 收藏  |  浏览/下载：27/0  |  提交时间：2013/03/25 A set of ZnO/MgZnO heterostructures with well widths  Lw  varying from 2 to 20 nm has been grown by plasma-assisted molecular-beam epitaxy (P-MBE). We present a room-temperature (RT) study of the well-width-dependent photoluminescence (PL) spectra and carrier lifetimes in ZnO/MgZnO heterostructures. Bi-exponential process is seen at RT time-decay curves of the luminescence from the well layers. The fast process is from the recombination of the free exciton  while the slow process is attributing to the recombination of the localized exciton in the interface of ZnO and MgZnO. It is also confirmed from the PL peak shift of time-resolved PL spectra. With decreasing the well thickness  the fast process gradually increases and dominantly contributes to the PL spectrum due to the interface improvement. 2006 Elsevier B.V. All rights reserved.   Excitonic properties of vertically aligned ZnO nanotubes under high-density excitation (EI CONFERENCE) 会议论文  OAI收割 Lu Y. M.; Liang H. W.; Shen D. Z.; Zhang Z. Z.; Zhang J. Y.; Zhao D. X.; Liu Y. C.; Fan X. W. 收藏  |  浏览/下载：13/0  |  提交时间：2013/03/25 In this paper  highly oriented and vertically arranged ZnO nanotubes are prepared on Al2O3 (0 0 0 1) substrate without employing any metal catalysts by plasma-assisted molecular beam epitaxy. The photoluminescence (PL) spectra at room temperature are studied under high excitation densities. Under lower excitation density (60 kW/cm2)  PL spectrum shows that one strong free exciton emission (FE) locates at 3.306 eV. As the excitation density increases up to 200 kW/cm2  a new emission peak (Pn) located at low-energy side of FE is attributed to the spontaneous emission due to an exciton-exciton (Ex-E x) scattering process from two ground state excitons  where one exciton is recombined by emitting a photon and the other is scattered into the excited states of n=2  3  4.... Under excitation density of 300 kW/cm 2  the stimulated emission originating from Ex-E x scattering is obtained. When the excitation density is above 580 kW/cm2  the emission from electron-hole plasma is observed in low-energy side of the P band and indicates a typical superradiation recombination processes with increasing excitation density. 2006 Elsevier B.V. All rights reserved.   Optical properties of gan grown on si(111) substrates by mocvd 期刊论文  iSwitch采集 International journal of modern physics b, 2005, 卷号: 19, 期号: 15-17, 页码: 2610-2615 作者:  Zhang, BS;  Wang, JF;  Wang, Y;  Zhu, JJ;  Yang, H 收藏  |  浏览/下载：21/0  |  提交时间：2019/05/12 Gan  Mocvd  Optical properties  Pl spectrum