中国科学院机构知识库网格系统: 检索

浏览/检索结果: 共5条，第1-5条

帮助

条数/页：排序方式：
	Intersubband absorption properties of high Al content AlxGa1-xN/GaN multiple quantum wells grown with different interlayers by metal organic chemical vapor deposition 期刊论文 OAI收割 NANOSCALE RESEARCH LETTERS, 2012, 卷号: 7, 页码: 1 Sun, HH; Guo, FY; Li, DY; Wang, L; Wang, DB; Zhao, LC 收藏 \| 浏览/下载：40/0 \| 提交时间：2013/09/18 MU-M STRAIN RELAXATION WAVELENGTH RANGE GAN/ALGAN SUPERLATTICES GAN TRANSITIONS DISLOCATIONS ALN/GAN MOCVD
	Growth and characterization of algan/gan heterostructure using unintentionally doped aln/gan superlattices as barrier layer 期刊论文 iSwitch采集 Superlattices and microstructures, 2009, 卷号: 45, 期号: 2, 页码: 54-59 作者: Zhang, M. L.; Wang, X. L.; Xiao, H. L.; Wang, C. M.; Yang, C. B. 收藏 \| 浏览/下载：36/0 \| 提交时间：2019/05/12 Algan/gan heterostructure Superlattices (sls) Root mean square roughness (rms) Sheet resistance
	Growth and characterization of AlGaN/GaN heterostructure using unintentionally doped AlN/GaN superlattices as barrier layer 期刊论文 OAI收割 SUPERLATTICES AND MICROSTRUCTURES, 2009, 卷号: 45, 期号: 2, 页码: 54-59 作者: Zhang, M. L.; Wang, X. L.; Xiao, H. L.; Wang, C. M.; Yang, C. B. \| 收藏 \| 浏览/下载：10/0 \| 提交时间：2021/02/02 AlGaN/GaN heterostructure Superlattices (SLs) Root mean square roughness (RMS) Sheet resistance
	Growth and characterization of AlGaN/GaN heterostructure using unintentionally doped AlN/GaN superlattices as barrier layer 期刊论文 OAI收割 superlattices and microstructures, 2009, 卷号: 45, 期号: 2, 页码: 54-59 作者: Zhang ML 收藏 \| 浏览/下载：174/57 \| 提交时间：2010/03/08 AlGaN/GaN heterostructure Superlattices (SLs) Root mean square roughness (RMS) Sheet resistance
	Modulation magnesium-doping in AlGaN/GaN superlattices 会议论文 OAI收割 international workshop on nitride semiconductors (iwn 2000), nagoya, japan, sep 24-27, 2000 Liu XL; Yuan HR; Lu DC; Wang XH 收藏 \| 浏览/下载：17/0 \| 提交时间：2010/10/29 Mg-doped AlGaN/GaN superlattices resistivity hole concentration POLARIZATION