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	Influence of an External Magnetic Field on the Growth of Nanocrystalline Silicon Films Grown by MF Magnetron Sputtering 期刊论文 OAI收割 Journal of Materials Science & Technology, 2012, 卷号: 28, 期号: 11, 页码: 992-998 J. H. Gao; L. Zhang; J. Q. Xiao; J. Gong; C. Sun; L. S. Wen 收藏 \| 浏览/下载：17/0 \| 提交时间：2013/02/05 Nanocrystalline silicon Thin film Solenoid coil MF magnetron sputtering chemical-vapor-deposition amorphous-silicon thin-films microstructure temperature fabrication density si
	Aluminum induced crystallization of strongly (111) oriented polycrystalline silicon thin film and nucleation analysis 期刊论文 OAI收割 science china-technological sciences, 2010, 卷号: 53, 期号: 11, 页码: 3002-3005 Huang TM (Huang TianMao); Chen NF (Chen NuoFu); Zhang XW (Zhang XingWang); Bai YM (BaiYiMing); Yin ZG (Yin ZhiGang); Shi HW (Shi HuiWei); Zhang H (Zhang Han); Wang Y (Wang Yu); Wang YS (Wang YanShuo); Yang XL (Yang XiaoLi) 收藏 \| 浏览/下载：29/0 \| 提交时间：2010/11/14 polycrystalline silicon thin film aluminum induced crystallization (111) preferred orientation INDUCED LAYER-EXCHANGE AMORPHOUS-SILICON SOLAR-CELLS GLASS SI ORIENTATION MODEL
	脉冲激光晶化非晶硅薄膜的有限差分模拟期刊论文 OAI收割强激光与粒子束, 2008, 卷号: 20, 期号: 7, 页码: 1100, 1104 袁志军; 楼祺洪; 周军; 董景星; 魏运荣; 王之江收藏 \| 浏览/下载：954/186 \| 提交时间：2009/09/18 激光晶化 Amorphous silicon thin film 非晶硅薄膜 Crystallization speed 多晶硅 Energy densities 有限差分模拟 Finite difference Finite difference simulation Finite difference simulations Grain sizes Laser induced crystallization Mathematic modeling Melt depth Phase changes Polycrystalline silicon Pulsed lasers Red lasers Substrate temperatures Threshold energies Varied parameters
	Electrical properties in vanadyl-phthalocyanine-based metal-insulator-semiconductor devices 期刊论文 OAI收割 applied physics letters, 2007, 卷号: 91, 期号: 15, 页码: 文献编号：153508 Wang LJ; Liu GJ; Wang HB; Song D; Yu B; Yan DH 收藏 \| 浏览/下载：271/1 \| 提交时间：2010/07/13 THIN-FILM TRANSISTORS FIELD-EFFECT TRANSISTORS AMORPHOUS-SILICON CAPACITANCE DIODES PERFORMANCE DIELECTRICS DEPENDENCE
	Fabrication of polysilicon thin film on glass with low-temperature UV-assisted crystallization (EI CONFERENCE) 会议论文 OAI收割 ICO20: Display Devices and Systems, August 21, 2005 - August 26, 2005, Changchun, China Huang J. Y.; Ling Z. H.; Jing H.; Fu G. Z.; Zhao Y. H. 收藏 \| 浏览/下载：32/0 \| 提交时间：2013/03/25 The amorphous silicon (a-Si) film was crystallized on glass by a simple method employed ultraviolet at temperatures as low as 400C. The employ of ultraviolet enhanced the crystallization of amorphous silicon. This method is able to uniformly crystallized large-area amorphous silicon films. The polysilicon films crystallized by this way are suitable for the fabrication of thin film transistors on ordinary glass. Crystallization process is performed in a furnace. Amorphous silicon sample is placed on a hot plate and irradiated by a bank of ultraviolet lamps through a diffuser plate to improve the uniformity of light that irradiates the sample. Raman microscopy is used for analyzing the qualities of UV-assisted crystallized silicon films. By measuring the Raman spectra the effects of anneal temperature and process time on the crystallizing behavior crystallinity and grain size of the processed films were obtained. There has a threshold temperature for crystallization of amorphous silicon film in the presence of ultraviolet irradiation with certain intensity i.e. by ultraviolet irradiation with certain intensity only when the temperature is up to the threshold temperature the crystallization can be triggered. The threshold temperature is 400C when the intensity of ultraviolet irradiation is 1mW/cm2. Above threshold temperature the increase of anneal temperature increased the rate of crystallization. Crystallinity and grain size extracted from Raman spectra of samples increase with the extending of process time at certain temperature. Crystallization of amorphous silicon film with thickness of 50nm completed within 6 hours at 400C irradiated by ultraviolet with intensity of 2mW/cm2.
	Design of an improved data signal timing for an amorphous silicon active-matrix organic LED display (EI CONFERENCE) 会议论文 OAI收割 ICO20: Display Devices and Systems, August 21, 2005 - August 26, 2005, Changchun, China 作者: Zhang Z.-W. 收藏 \| 浏览/下载：19/0 \| 提交时间：2013/03/25 The most critical issue in the design of an active matrix organic light emitting diode (AM-OLED) display pixel is the pixel to the pixel luminance uniformity. By substituting four-thin film transistor (TFT) pixel circuit for two-TFT pixel circuit the luminous uniformity has great improved but it requires more components than the two-TFT pixel circuit. There are some barriers needed to resolve to utilize hydrogenated amorphous silicon transistor to lit OLED such as low field effect mobility low output current and threshold voltage shift. In this article a two-a-Si:H TFT pixel circuit was designed which consisted of one named switching TFT and the other named driving TFT. The driving TFT gate line structure modified and a data signal timing improved were reported. The modified driving TFT can provide enough current about 30 microampere to lit OLED and the novel data signal timing can provide a constant current to OLED by restraining the driving TFT threshold voltage variation. In the novel data signal timing the control signals to the driving TFT gate include a data signal and a reverse data signal. The signals alteration is performed either at a frame rate or at a line rate. By experiments the driving TFT output current value is plotted as a function of the time in different reversed voltage value. When the magnitude of the positive data signal and the negative data signal is equal the variety of Vth is smallest about 1.28V after a fixed stressing time of 1.33104min which shows the novel data signal timing can improved the driving TFT output-input current stability.
	Silicon thin films prepared in the transition region and their use in solar cells 期刊论文 OAI收割 solar energy materials and solar cells, 2006, 卷号: 90, 期号: 18-19, 页码: 3001-3008 Zhang S (Zhang S.); Liao X (Liao X.); Raniero L (Raniero L.); Fortunato E (Fortunato E.); Xu Y (Xu Y.); Kong G (Kong G.); Aguas H (Aguas H.); Ferreira I (Ferreira I.); Martins R (Martins R.) 收藏 \| 浏览/下载：68/0 \| 提交时间：2010/04/11 silicon thin film solar cell HYDROGENATED AMORPHOUS-SILICON SI MICROSTRUCTURE
	Ag-enhanced SEI formation on Si particles for lithium batteries 期刊论文 OAI收割 ELECTROCHEMISTRY COMMUNICATIONS, 2003, 卷号: 5, 期号: 11, 页码: 935 Wu, XD; Wang, ZX; Chen, LQ; Huang, XJ 收藏 \| 浏览/下载：24/0 \| 提交时间：2013/09/17 THIN-FILM ANODES AMORPHOUS-SILICON ALLOY ELECTRODES ION BATTERIES CAPACITY