中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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机构
新疆理化技术研究所 [10]
物理研究所 [1]
金属研究所 [1]
化学研究所 [1]
中国科学院大学 [1]
重庆绿色智能技术研究... [1]
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OAI收割 [15]
iSwitch采集 [1]
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期刊论文 [16]
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2021 [1]
2019 [2]
2017 [1]
2015 [3]
2014 [2]
2013 [1]
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Physics [3]
半导体材料 [1]
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Band convergence and thermoelectric performance enhancement of InSb via Bi doping
期刊论文
OAI收割
INTERMETALLICS, 2021, 卷号: 139, 页码: 8
作者:
Zhang, Xiong
;
Lu, Wei
;
Zhang, Yu
;
Gu, Haoshuang
;
Zhou, Zizhen
  |  
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2021/11/26
Thermoelectric
InSb
Electrical properties optimization
Bipolar effect
Power factor enhancement
Synergistic effect of enhanced low-dose-rate sensitivity and single event transient in bipolar voltage comparator LM139
期刊论文
OAI收割
JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY, 2019, 卷号: 56, 期号: 2, 页码: 172-178
作者:
Yao, S (Yao, Shuai)[ 1,2,3 ]
;
Lu, W (Lu, Wu)[ 1,2,4 ]
;
Yu, X (Yu, Xin)[ 1,2 ]
;
Wang, X (Wang, Xin)[ 1,2 ]
;
Li, XL (Li, Xiaolong)[ 1,2,3 ]
  |  
收藏
  |  
浏览/下载:99/0
  |  
提交时间:2019/02/25
Enhanced low dose rate sensitivity
single event transient
bipolar voltage comparator
synergistic effect
Mechanism of Degradation Rate on the Irradiated Double-Polysilicon Self-Aligned Bipolar Transistor
期刊论文
OAI收割
ELECTRONICS, 2019, 卷号: 8, 期号: 6, 页码: 1-8
作者:
Liu, MH (Liu, Mohan)[ 1,2 ]
;
Lu, W (Lu, Wu)[ 1 ]
;
Yu, X (Yu, Xin)[ 1,2 ]
;
Wang, X (Wang, Xin)[ 1 ]
;
Li, XL (Li, Xiaolong)[ 1 ]
  |  
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2020/04/03
saturation effect
gain degradation
total ionizing dose
gamma ray
bipolar transistor
Whole-genome sequencing of monozygotic twins discordant for schizophrenia indicates multiple genetic risk factors for schizophrenia
期刊论文
OAI收割
JOURNAL OF GENETICS AND GENOMICS, 2017, 卷号: 44, 期号: 6, 页码: 295-306
作者:
Tang Jinsong
;
Fan Yu
;
Li Hong
;
Xiang Qun
;
Zhang DengFeng
  |  
收藏
  |  
浏览/下载:27/0
  |  
提交时间:2021/02/02
DE-NOVO MUTATIONS
STRUCTURAL VARIANT DISCOVERY
WIDE ASSOCIATION
PSYCHIATRIC-DISORDERS
SYNAPTIC PLASTICITY
BIPOLAR DISORDER
PROTEIN FUNCTION
COMPLEX TRAITS
MESSENGER-RNA
HUMAN-DISEASE
Whole-genome sequencing
Schizophrenia
Monozygotic twin
De novo mutation
Combined effect
Susceptibility
Radiation damage effect and post-annealing treatments of NPN-input bipolar operational amplifier in electron radiation environment
期刊论文
OAI收割
ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 13, 页码: 302-308
作者:
Jiang, K (Jiang Ke)
;
Lu, W (Lu Wu)
;
Hu, TL (Hu Tian-Le)
;
Wang, X (Wang Xin)
;
Guo, Q (Guo Qi)
  |  
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2018/01/25
Npn-input Bipolar Operational Amplifier
Electron Radiation
Radiation Effect
Annealing
Single-event response of the SiGe HBT in TCAD simulations and laser microbeam experiment
期刊论文
OAI收割
CHINESE PHYSICS B, 2015, 卷号: 24, 期号: 8
作者:
Li, P (Li Pei)
;
Guo, HX (Guo Hong-Xia)
;
Guo, Q (Guo Qi)
;
Zhang, JX (Zhang Jin-Xin)
;
Xiao, Y (Xiao Yao)
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2017/09/14
SiGe heterojunction bipolar transistor
single event effect
three-dimensional numerical simulation
laser microbeam experiment
Simulation and sesign of single event effect radiation hardening for SiGe heterojunction bipolar transistor
期刊论文
OAI收割
ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 11
作者:
Li, P (Li Pei)
;
Guo, HX (Guo Hong-Xia)
;
Guo, Q (Guo Qi)
;
Wen, L (Wen Lin)
;
Cui, JW (Cui Jiang-Wei)
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2015/07/11
SiGe heterojunction bipolar transistor
single event effect
hardening design
dummy collector
Three-dimensional simulation study of bias effect on single event effects of SiGe heterojunction bipolar transistor
期刊论文
OAI收割
ACTA PHYSICA SINICA, 2014, 卷号: 63, 期号: 24
作者:
Zhang, JX (Zhang Jin-Xin)
;
He, CH (He Chao-Hui)
;
Guo, HX (Guo Hong-Xia)
;
Tang, D (Tang Du)
;
Xiong, C (Xiong Cen)
  |  
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2018/02/01
Sige Heterojunction Bipolar Transistor
Different Bias
Single Event Effect
3d Numerical Simulation
双极电压比较器电离辐射损伤及剂量率效应分析
期刊论文
OAI收割
物理学报, 2014, 卷号: 63, 期号: 2, 页码: 229-235
作者:
马武英
;
陆妩
;
郭旗
;
何承发
;
吴雪
收藏
  |  
浏览/下载:30/0
  |  
提交时间:2014/11/11
双极电压比较器
60 Coγ辐照
剂量率效应
辐射损伤
bipolar voltage comparator
60Coγ irradiation
dose rate effect
ionization damage
3d simulation of heavy ion induced charge collection of single event effects in sige heteroj unction bipolar transistor
期刊论文
OAI收割
ACTA PHYSICA SINICA, 2013, 卷号: 62, 期号: 4, 页码: -
作者:
Zhang Jin-Xin
;
Guo Hong-Xia
;
Guo Qi
;
Wen Lin
;
Cui Jiang-Wei
收藏
  |  
浏览/下载:39/0
  |  
提交时间:2013/11/07
SiGe heterojunction bipolar transistor
single event effect
charge collection
three-dimensional numerical simulation