机构

• 新疆理化技术研究所 [10]
• 物理研究所 [1]
• 金属研究所 [1]
• 化学研究所 [1]
• 中国科学院大学 [1]
• 新疆天文台 [1]
• 更多

采集方式

• OAI收割 [16]
• iSwitch采集 [1]

内容类型

• 期刊论文 [17]

发表日期

• 2025 [1]
• 2021 [1]
• 2019 [2]
• 2017 [1]
• 2015 [3]
• 2014 [2]
• 更多

学科主题

• Physics [3]
• 半导体材料 [1]

筛选

浏览/检索结果: 共17条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序作者升序作者降序 Tl2XY (X, Y = S, Se) monolayers with low lattice thermal conductivity and high thermoelectric performance by full-band approach with four scattering mechanisms 期刊论文  OAI收割 JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2025, 卷号: 58, 期号: 4, 页码: 045506 作者:  Yu, Meng-Yuan;  Yang, Chuan-Lu;  Li, Xiaohu;  Liu, Yuliang;  Zhao, Wenkai   |  收藏  |  浏览/下载：3/0  |  提交时间：2024/12/06 multiple scattering  carrier transport  thermoelectric properties  bipolar effect  full-band   Band convergence and thermoelectric performance enhancement of InSb via Bi doping 期刊论文  OAI收割 INTERMETALLICS, 2021, 卷号: 139, 页码: 8 作者:  Zhang, Xiong;  Lu, Wei;  Zhang, Yu;  Gu, Haoshuang;  Zhou, Zizhen   |  收藏  |  浏览/下载：31/0  |  提交时间：2021/11/26 Thermoelectric  InSb  Electrical properties optimization  Bipolar effect  Power factor enhancement   Synergistic effect of enhanced low-dose-rate sensitivity and single event transient in bipolar voltage comparator LM139 期刊论文  OAI收割 JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY, 2019, 卷号: 56, 期号: 2, 页码: 172-178 作者:  Yao, S (Yao, Shuai)[ 1,2,3 ];  Lu, W (Lu, Wu)[ 1,2,4 ];  Yu, X (Yu, Xin)[ 1,2 ];  Wang, X (Wang, Xin)[ 1,2 ];  Li, XL (Li, Xiaolong)[ 1,2,3 ]   |  收藏  |  浏览/下载：101/0  |  提交时间：2019/02/25 Enhanced low dose rate sensitivity  single event transient  bipolar voltage comparator  synergistic effect   Mechanism of Degradation Rate on the Irradiated Double-Polysilicon Self-Aligned Bipolar Transistor 期刊论文  OAI收割 ELECTRONICS, 2019, 卷号: 8, 期号: 6, 页码: 1-8 作者:  Liu, MH (Liu, Mohan)[ 1,2 ];  Lu, W (Lu, Wu)[ 1 ];  Yu, X (Yu, Xin)[ 1,2 ];  Wang, X (Wang, Xin)[ 1 ];  Li, XL (Li, Xiaolong)[ 1 ]   |  收藏  |  浏览/下载：27/0  |  提交时间：2020/04/03 saturation effect  gain degradation  total ionizing dose  gamma ray  bipolar transistor   Whole-genome sequencing of monozygotic twins discordant for schizophrenia indicates multiple genetic risk factors for schizophrenia 期刊论文  OAI收割 JOURNAL OF GENETICS AND GENOMICS, 2017, 卷号: 44, 期号: 6, 页码: 295-306 作者:  Tang Jinsong;  Fan Yu;  Li Hong;  Xiang Qun;  Zhang DengFeng   |  收藏  |  浏览/下载：28/0  |  提交时间：2021/02/02 DE-NOVO MUTATIONS  STRUCTURAL VARIANT DISCOVERY  WIDE ASSOCIATION  PSYCHIATRIC-DISORDERS  SYNAPTIC PLASTICITY  BIPOLAR DISORDER  PROTEIN FUNCTION  COMPLEX TRAITS  MESSENGER-RNA  HUMAN-DISEASE  Whole-genome sequencing  Schizophrenia  Monozygotic twin  De novo mutation  Combined effect  Susceptibility   Radiation damage effect and post-annealing treatments of NPN-input bipolar operational amplifier in electron radiation environment 期刊论文  OAI收割 ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 13, 页码: 302-308 作者:  Jiang, K (Jiang Ke);  Lu, W (Lu Wu);  Hu, TL (Hu Tian-Le);  Wang, X (Wang Xin);  Guo, Q (Guo Qi)   |  收藏  |  浏览/下载：28/0  |  提交时间：2018/01/25 Npn-input Bipolar Operational Amplifier  Electron Radiation  Radiation Effect  Annealing   Single-event response of the SiGe HBT in TCAD simulations and laser microbeam experiment 期刊论文  OAI收割 CHINESE PHYSICS B, 2015, 卷号: 24, 期号: 8 作者:  Li, P (Li Pei);  Guo, HX (Guo Hong-Xia);  Guo, Q (Guo Qi);  Zhang, JX (Zhang Jin-Xin);  Xiao, Y (Xiao Yao) 收藏  |  浏览/下载：29/0  |  提交时间：2017/09/14 SiGe heterojunction bipolar transistor  single event effect  three-dimensional numerical simulation  laser microbeam experiment   Simulation and sesign of single event effect radiation hardening for SiGe heterojunction bipolar transistor 期刊论文  OAI收割 ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 11 作者:  Li, P (Li Pei);  Guo, HX (Guo Hong-Xia);  Guo, Q (Guo Qi);  Wen, L (Wen Lin);  Cui, JW (Cui Jiang-Wei) 收藏  |  浏览/下载：31/0  |  提交时间：2015/07/11 SiGe heterojunction bipolar transistor  single event effect  hardening design  dummy collector   Three-dimensional simulation study of bias effect on single event effects of SiGe heterojunction bipolar transistor 期刊论文  OAI收割 ACTA PHYSICA SINICA, 2014, 卷号: 63, 期号: 24 作者:  Zhang, JX (Zhang Jin-Xin);  He, CH (He Chao-Hui);  Guo, HX (Guo Hong-Xia);  Tang, D (Tang Du);  Xiong, C (Xiong Cen)   |  收藏  |  浏览/下载：18/0  |  提交时间：2018/02/01 Sige Heterojunction Bipolar Transistor  Different Bias  Single Event Effect  3d Numerical Simulation   双极电压比较器电离辐射损伤及剂量率效应分析 期刊论文  OAI收割 物理学报, 2014, 卷号: 63, 期号: 2, 页码: 229-235 作者:  马武英;  陆妩;  郭旗;  何承发;  吴雪 收藏  |  浏览/下载：38/0  |  提交时间：2014/11/11 双极电压比较器  60 Coγ辐照  剂量率效应  辐射损伤  bipolar voltage comparator  60Coγ irradiation  dose rate effect  ionization damage