机构

• 物理研究所 [3]
• 大连化学物理研究所 [3]
• 半导体研究所 [3]
• 苏州纳米技术与纳米仿... [2]
• 长春光学精密机械与物... [1]
• 过程工程研究所 [1]
• 更多

采集方式

• OAI收割 [15]
• iSwitch采集 [1]

内容类型

• 期刊论文 [12]
• 会议论文 [4]

发表日期

• 2019 [3]
• 2017 [1]
• 2015 [1]
• 2014 [3]
• 2010 [3]
• 2004 [1]
• 更多

学科主题

• 光电子学 [1]
• 半导体材料 [1]
• 半导体物理 [1]

筛选

浏览/检索结果: 共16条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Fe-substituted Ba-hexaaluminate with enhanced oxygen mobility for CO2 capture by chemical looping combustion of methane 期刊论文  OAI收割 JOURNAL OF ENERGY CHEMISTRY, 2019, 卷号: 29, 页码: 50-57 作者:  Tian, Ming;  Huang, Fei;  Zhu, Yanyan;  Wang, Xiaodong;  Wang, Aiqin   |  收藏  |  浏览/下载：46/0  |  提交时间：2019/06/20 CO2 capture  Chemical looping  CH4 conversion  Oxygen mobility  Fe-based hexaaluminate   Fe-substituted ba-hexaaluminate with enhanced oxygen mobility for co2 capture by chemical looping combustion of methane 期刊论文  iSwitch采集 Journal of energy chemistry, 2019, 卷号: 29, 页码: 50-57 作者:  Huang, Fei;  Tian, Ming;  Zhu, Yanyan;  Wang, Xiaodong;  Wang, Aiqin 收藏  |  浏览/下载：100/0  |  提交时间：2019/05/08 Co2 capture  Chemical looping  Ch4 conversion  Oxygen mobility  Fe-based hexaaluminate   Electronic Devices and Circuits Based on Wafer-Scale Polycrystalline Monolayer MoS2 by Chemical Vapor Deposition 期刊论文  OAI收割 Advanced Electronic Materials, 2019, 卷号: 5, 期号: 8, 页码: 10 作者:  L.Wang;  L.Chen;  S.L.Wong;  X.Huang;  W.G.Liao   |  收藏  |  浏览/下载：22/0  |  提交时间：2020/08/24 chemical vapor deposition (CVD),integrated circuits,memory,MoS2,transistors,transition-metal dichalcogenides,graphene transistors,integrated-circuits,phase growth,mobility,layers,Science & Technology - Other Topics,Materials Science,Physics   Fate of metals before and after chemical extraction of incinerated sewage sludge ash 会议论文  OAI收割 Hong Kong Polytechn Univ, Hung Hom, PEOPLES R CHINA, MAY 25-28, 2017 作者:  Li, Jiang-Shan;  Tsang, Daniel C. W.;  Wang, Qi-ming;  Fang, Le;  Xue, Qiang   |  收藏  |  浏览/下载：26/0  |  提交时间：2018/06/05 Heavy metals  Incinerator ash  Sewage sludge  Mobility  Bioaccessibility  Chemical extraction   Approaching the Hole Mobility Limit of GaSb Nanowires 期刊论文  OAI收割 ACS NANO, 2015, 卷号: 9, 期号: 9, 页码: 9268-9275 作者:  Yang, Zai-xing;  Yip, Senpo;  Li, Dapan;  Han, Ning;  Dong, Guofa 收藏  |  浏览/下载：51/0  |  提交时间：2015/11/16 GaSb nanowires  surfactant-assisted chemical vapor deposition  diameter dependent  growth orientation  hole mobility   Detection of Chemical Warfare Agents by Differential Mobility Spectrometry and Drift-time Ion Mobility Spectrometry Hybrid Technology 期刊论文  OAI收割 chinese journal of analytical chemistry, 2014, 卷号: 42, 期号: 9, 页码: 1264-1269 作者:  Cheng Sha-Sha;  Chen Chuang;  Wang Wei-Guo;  Li Hai-Yang 收藏  |  浏览/下载：34/0  |  提交时间：2015/11/17 Differential mobility spectrometry  Drift-time ion mobility spectrometry  Hybrid technology  Chemical warfare agents stimulants   Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition 期刊论文  OAI收割 THIN SOLID FILMS, 2014, 卷号: 564, 期号: 0, 页码: 135-139 作者:  Yang H(杨辉) 收藏  |  浏览/下载：25/0  |  提交时间：2014/12/02 Carbon impurity  Metalorganic chemical vapor deposition  High-resistance gallium nitride  High electron mobility transistors   Mobility behavior and environmental implications of trace elementsassociated with coal gangue: A case study at the Huainan Coalfieldin China 期刊论文  OAI收割 Chemosphere, 2014, 卷号: 95, 页码: 193-199 作者:  Wang,RW(Wang,Ruwei)[1];  Fang,T(Fang,Ting)[1];  Fan,X(Fan,Xiang)[1];  Wu,D(Wu,Dun)[1];  Liu,GJ(Liu,Guijian)[1,2]   |  收藏  |  浏览/下载：28/0  |  提交时间：2018/12/04 Huainan Coalfield  Coal Gangue  Trace Element  Chemical Mobility   Analysis of surface roughness in Ti/Al/Ni/Au Ohmic contact to AlGaN/GaN high electron mobility transistors 期刊论文  OAI收割 Applied Physics Letters, 2010, 期号: 6 作者:  Zhang BS (张宝顺);  Cai Y (蔡勇) 收藏  |  浏览/下载：209/64  |  提交时间：2010/12/31 aggregation  aluminium  aluminium compounds  gallium compounds  gold  high electron mobility transistors  III-V semiconductors  nickel  ohmic contacts  rapid thermal annealing  semiconductor-metal boundaries  surface morphology  surface roughness  titanium  transmission electron microscopy  wide band gap semiconductors  X-ray chemical analysis   Characterization of different-Al-content AlGaN/GaN heterostructures on sapphire 期刊论文  OAI收割 SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2010, 卷号: 53, 期号: 1, 页码: 49 Ding, GJ; Guo, LW; Xing, ZG; Chen, Y; Xu, PQ; Jia, HQ; Zhou, JM; Chen, H 收藏  |  浏览/下载：29/0  |  提交时间：2013/09/17 FIELD-EFFECT TRANSISTORS  ELECTRON-MOBILITY TRANSISTORS  CHEMICAL-VAPOR-DEPOSITION  OPTICAL-PROPERTIES  INDUCED CHARGE  POLARIZATION  GAN  EPITAXY