机构

• 中国科学院大学 [2]
• 力学研究所 [1]
• 长春光学精密机械与物... [1]
• 化学研究所 [1]
• 上海光学精密机械研究... [1]

采集方式

• OAI收割 [4]
• iSwitch采集 [2]

内容类型

• 期刊论文 [5]
• 会议论文 [1]

发表日期

• 2014 [1]
• 2009 [1]
• 2007 [2]
• 2005 [2]

学科主题

• 光学材料;晶体 [1]

筛选

浏览/检索结果: 共6条，第1-6条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择作者升序作者降序发表日期升序发表日期降序题名升序题名降序提交时间升序提交时间降序 Preparation of silicon nanowires by in situ doping and their electrical properties 期刊论文  OAI收割 COLLOIDS AND SURFACES A-PHYSICOCHEMICAL AND ENGINEERING ASPECTS, 2014, 卷号: 450, 页码: 156-160 作者:  Wang, Jindong;  He, Gen;  Qin, Jinwen;  Li, Lidong;  Guo, Xuefeng   |  收藏  |  浏览/下载：34/0  |  提交时间：2019/04/09 Nanowire  Silicon  Afm  Wet Chemical Etch  Electrical Measurement  Dopant   Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions 期刊论文  OAI收割 半导体学报, 2009, 期号: 8, 页码: 47-51 作者:  Chen NF(陈诺夫) 收藏  |  浏览/下载：40/0  |  提交时间：2015/09/02 chemical etching  etch pit  defect  growth striations  convection   Electrochemical/chemical synthesis of highly-oriented single-crystal zno nanotube arrays on transparent conductive substrates 期刊论文  iSwitch采集 Electrochemistry communications, 2007, 卷号: 9, 期号: 12, 页码: 2784-2788 作者:  She, Guangwei;  Zhang, Xiaohong;  Shi, Wensheng;  Fan, Xia;  Chang, Jack C. 收藏  |  浏览/下载：37/0  |  提交时间：2019/05/10 Zno nanotube  Electrochemical/chemical synthesis  Etch  Photoluminescence  Cathodoluminescence   The spectral feature analysis of semiconductor thin disk laser (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China 作者:  Li J.;  Wang L.-J.;  Wang L.-J.;  Ning Y.-Q.;  Li J. 收藏  |  浏览/下载：43/0  |  提交时间：2013/03/25 The semiconductor thin disk laser is a new type of semiconductor laser. This work gives the basic operation function of semiconductor disk laser  and analyses the heat effect by the experimentally measured photoluminescence spectrum of the laser chip at different pump power and different temperature. We can see that: with increasing pump power  the thermal effects of the gain material becomes seriously and causes the saturation of carrier lifetime  so the electron-hole pair created in the absorbtion layer have no enough time to rate to one of the wells  and the non-radiative recombination happens in the barrier. When the thermal effects becomes stronger  the chip will not lasing. This phenomenon is from the smaller energy offset between barrier and quantum well. We optimize the original structure design and experimental technology. A non-absorbing AlGaAs layer who is transparent to the pumping and laser wavelength is added to confine the carriers in the quantum wells. At the same time a DBR with double reflecting band is induced to improve the absorbing efficiency of the pumping light. The single QW is replaced by the three narrow QWs  This three QWs structure can add the quantum state of QW  increase the recombination probability of carriers in the QWs and reduce the heat effect. The chemical etch equipment is also improved to control the surface unevenness to be within 50 nm.   Defect study of tm : yag crystal 期刊论文  iSwitch采集 Journal of inorganic materials, 2005, 卷号: 20, 期号: 4, 页码: 869-874 作者:  Song, PX;  Zhao, ZW;  Xu, XD;  Deng, PZ;  Xu, J 收藏  |  浏览/下载：25/0  |  提交时间：2019/05/10 Tm : yag crystal  Chemical etch  Dislocation  Annealing   提拉法Tm：YAG晶体的生长缺陷研究 期刊论文  OAI收割 无机材料学报, 2005, 卷号: 20, 期号: 4, 页码: 869, 874 宋平新; 赵志伟; 徐晓东; 邓佩珍; 徐军 收藏  |  浏览/下载：2346/509  |  提交时间：2009/09/24 Tm:YAG晶体  化学腐蚀  位错  退火  Tm : YAG crystal  chemical etch  dislocation  annealing