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	Deuterium retention and release behaviours of tungsten and deuterium co-deposited layers 期刊论文 OAI收割 Journal of Nuclear Materials, 2018, 期号: 502, 页码: 247-254 作者: Qiao L(乔丽); Zhang, H. W.; Xu J(许佼); Chai LQ(柴利强); Hu, M. \| 收藏 \| 浏览/下载：36/0 \| 提交时间：2018/06/11 Deuterium Retention Deuterium Release Tungsten Co-deposited Layers Magnetron Sputtering
	IAD-Si coatings on RB-SiC space mirrors for ultra-smooth surfaces (EI CONFERENCE) 会议论文 OAI收割 4th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, November 19, 2008 - November 21, 2008, Chengdu, China 作者: Xu L.; Wang X.; Wang X.; Wang X.; Zhang F. 收藏 \| 浏览/下载：25/0 \| 提交时间：2013/03/25 To eliminate surface limitation caused by Silicon impurity in RB-SiC space mirrors a relatively thick Si film is deposited on well finished RB-SiC substrate by a new process-ion assisted depositing (IAD) to provide a better polishable surface. Testing results of IAD-Si properties are provided showing that the amorphous film has great thermal shock resistance. Then polishing experiments on 100.5m thick IAD-Si layers are accomplished focusing on smoother surface. Surface figure and micro-roughness of the coating after polished reach 0.026 RMS (=0.6328nm) and less than 0.5nm RMS respectively. Moreover reflectivity of IAD-Si polished surface with reflective films increases higher than 4.5% than that of RB-SiC in 360-1100nm. High reflectivity and desirable thermal property make IAD-Si an attractive coating material for RB-SiC space mirrors. 2009 SPIE.
	4H-SiC基底Al_2O_3/SiO_2双层减反射膜的设计和制备期刊论文 OAI收割光学学报, 2008, 卷号: 28, 期号: 12, 页码: 2431, 2435 黄火林; 张峰; 吴正云; 齐红基; 姚建可; 范正修; 邵建达收藏 \| 浏览/下载：1196/189 \| 提交时间：2009/09/22 薄膜光学 Al2O3/SiO2双层减反射膜电子束蒸发 4H-SiC基底折射率 4H-SiC substrate Al2O3/SiO2 double-layer anti-reflection coatings Deposited layers Electron beam evaporation Layer coatings Layer thicknesses Physical thicknesses Reference wavelengths Reflection spectrums Scanning electron microscopes SEM images Single layers Thin film optics UV optoelectronic devices Wavelength selectivities
	The fabrication and study of ZnO-based thin film transistors (EI CONFERENCE) 会议论文 OAI收割 Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China 作者: Wang C. 收藏 \| 浏览/下载：23/0 \| 提交时间：2013/03/25 Bottom-gate-type thin film transistors using ZnO as an active channel layer (ZnO-TF-TS) have been constructed. The ZnO layers were deposited using metal organic chemical vapor deposition (MOCVD)[1-3] at about 360C. SiO2 was used as the material of gate insulator to suppress the leakage current effectively and to enable the ZnO-TFT to operate successfully. The drain current on-to-off ratio of ZnO-TFTs fabricated on the substrate of glass is about 104. The average optical transmission of ZnO-TFTs in the visible portion is 80%. All above shows that it is possible to fabricate a transparent TFT using ZnO as an active channel layer instead of the traditional Si material.
	Low temperature PECVD SiNx films applied in OLED packaging 期刊论文 OAI收割 MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2003, 卷号: 98, 期号: 3, 页码: 248-254 Huang,WD; Wang,XH; Sheng,M; Xu,LQ; Stubhan,F; Luo,L; Feng,T; Wang,X; Zhang,FM; Zou,SC 收藏 \| 浏览/下载：27/0 \| 提交时间：2012/03/24 LIGHT-EMITTING DEVICES DEPOSITED SILICON-NITRIDE ELECTROLUMINESCENT DEVICES N FILMS DIODES DEGRADATION PASSIVATION LAYERS GROWTH