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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [3]
理论物理研究所 [2]
长春光学精密机械与物... [1]
采集方式
OAI收割 [5]
iSwitch采集 [1]
内容类型
期刊论文 [4]
会议论文 [2]
发表日期
2007 [1]
2003 [3]
1998 [1]
1996 [1]
学科主题
Physics [2]
半导体物理 [2]
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The spectral feature analysis of semiconductor thin disk laser (EI CONFERENCE)
会议论文
OAI收割
Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China
作者:
Li J.
;
Wang L.-J.
;
Wang L.-J.
;
Ning Y.-Q.
;
Li J.
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2013/03/25
The semiconductor thin disk laser is a new type of semiconductor laser. This work gives the basic operation function of semiconductor disk laser
and analyses the heat effect by the experimentally measured photoluminescence spectrum of the laser chip at different pump power and different temperature. We can see that: with increasing pump power
the thermal effects of the gain material becomes seriously and causes the saturation of carrier lifetime
so the electron-hole pair created in the absorbtion layer have no enough time to rate to one of the wells
and the non-radiative recombination happens in the barrier. When the thermal effects becomes stronger
the chip will not lasing. This phenomenon is from the smaller energy offset between barrier and quantum well. We optimize the original structure design and experimental technology. A non-absorbing AlGaAs layer who is transparent to the pumping and laser wavelength is added to confine the carriers in the quantum wells. At the same time a DBR with double reflecting band is induced to improve the absorbing efficiency of the pumping light. The single QW is replaced by the three narrow QWs
This three QWs structure can add the quantum state of QW
increase the recombination probability of carriers in the QWs and reduce the heat effect. The chemical etch equipment is also improved to control the surface unevenness to be within 50 nm.
Resonant tunneling of holes in gamnas-related double- barrier structures
期刊论文
iSwitch采集
Journal of superconductivity, 2003, 卷号: 16, 期号: 2, 页码: 279-282
作者:
Wu, HB
;
Chang, K
;
Xia, JB
;
Peeters, FM
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2019/05/12
Zeeman effect
Gamnas layer
Double-barrier structure
Resonant tunneling of holes in GaMnAs-related double- barrier structures
会议论文
OAI收割
pasps conference 2002, wurzburg, germany, jul, 2002
Wu HB
;
Chang K
;
Xia JB
;
Peeters FM
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2010/11/15
Zeeman effect
GaMnAs layer
double-barrier structure
APPROXIMATION
Resonant tunneling of holes in GaMnAs-related double- barrier structures
期刊论文
OAI收割
journal of superconductivity, 2003, 卷号: 16, 期号: 2, 页码: 279-282
Wu HB
;
Chang K
;
Xia JB
;
Peeters FM
收藏
  |  
浏览/下载:86/0
  |  
提交时间:2010/08/12
Zeeman effect
GaMnAs layer
double-barrier structure
APPROXIMATION
The transient transmission through a quantum dot under the influence of oscillating external fields
期刊论文
OAI收割
JOURNAL OF PHYSICS-CONDENSED MATTER, 1998, 卷号: 10, 期号: 16, 页码: 3569-3579
作者:
Lin, TH
;
Sun, QF
;
Sun, QF , Peking Univ, Dept Phys, Mesoscop Phys Lab, Beijing 100871, Peoples R China.
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收藏
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浏览/下载:19/0
  |  
提交时间:2012/08/29
Double-barrier Structure
Time-dependent Transport
Frequencies
Wells
Thz
Elastic- and inelastic-scattering effects on electron magnetotunneling through a quantum well
期刊论文
OAI收割
PHYSICAL REVIEW B, 1996, 卷号: 54, 期号: 4, 页码: 2691-2695
作者:
Lin, TH
;
Zhou, H
;
Du, YT
;
Zhou, H , BEIJING UNIV,DEPT PHYS,MESOSCOP PHYS LAB,BEIJING 100871,PEOPLES R CHINA.
  |  
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2012/08/29
Double-barrier Structure
Phonon-emission
Heterostructures
Field