机构

• 半导体研究所 [2]
• 新疆生态与地理研究所 [1]
• 长春光学精密机械与物... [1]

采集方式

• OAI收割 [4]

内容类型

• 期刊论文 [3]
• 会议论文 [1]

发表日期

• 2011 [2]
• 2010 [1]
• 2007 [1]

学科主题

• 半导体物理 [1]
• 微电子学 [1]

筛选

浏览/检索结果: 共4条，第1-4条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 T-shaped gate AlGaN/GaN HEMTs fabricated by femtosecond laser lithography without ablation 期刊论文  OAI收割 applied physics a: materials science and processing, 2011, 页码: 1-5 Du, Y.D.; Cao, H.Z.; Yan, W.; Han, W.H.; Liu, Y.; Dong, X.Z.; Zhang, Y.B.; Jin, F.; Zhao, Z.S.; Yang, F.H.; Duan, X.M. 收藏  |  浏览/下载：21/0  |  提交时间：2012/06/14 Ablation  Drain current  Fabrication  Gallium nitride  High electron mobility transistors  Photoresists  Ultrashort pulses   Fabrication and characterization of high performance AlGaN/GaN HEMTs on sapphire with silicon nitride passivation 期刊论文  OAI收割 journal of semiconductors, Journal of Semiconductors, 2011, 2011, 卷号: 32, 32, 期号: 6, 页码: 64001, 64001 作者:  Zhang, Renping;  Yan, Wei;  Wang, Xiaoliang;  Yang, Fuhua;  Zhang, R.(zhangrenping@semi.ac.cn)   |  收藏  |  浏览/下载：40/0  |  提交时间：2012/06/14 Aspect ratio  Current density  Drain current  Electric network analysis  Electric network analyzers  Electron mobility  Fabrication  Gallium nitride  Ohmic contacts  Passivation  Silicon nitride  Silicon wafers  Aspect Ratio  Current Density  Drain Current  Electric Network Analysis  Electric Network Analyzers  Electron Mobility  Fabrication  Gallium Nitride  Ohmic Contacts  Passivation  Silicon Nitride  Silicon Wafers   Total ionizing dose effects and annealing behavior for domestic VDMOS devices 期刊论文  OAI收割 Journal of Semiconductors, 2010, 卷号: 31, 期号: 4 Gao; Yu; Ren; Liu; Wang; Sun; Cui; Bo1; Xuefeng1; Diyuan1; Gang3; Yiyuan1; Jing1; Jiangwei1; 2; 2; 2; 2; 2; 2; 4; 4; 4 收藏  |  浏览/下载：19/0  |  提交时间：2011/08/19 Drain current - Electric breakdown - Experiments - Field effect transistors - Ionizing radiation - Irradiation - Radiation effects - Threshold voltage - Annealing behavior - Annealing time - Bias conditions - Breakdown voltage - Drain bias voltage - Electrical parameter - N-channel - On-state resistance - Preirradiation - Total dose - Total dose effect - Total ionizing dose effects - VDMOS device - VDMOS devices   The fabrication and study of ZnO-based thin film transistors (EI CONFERENCE) 会议论文  OAI收割 Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China 作者:  Wang C. 收藏  |  浏览/下载：23/0  |  提交时间：2013/03/25 Bottom-gate-type thin film transistors using ZnO as an active channel layer (ZnO-TF-TS) have been constructed. The ZnO layers were deposited using metal organic chemical vapor deposition (MOCVD)[1-3] at about 360C. SiO2 was used as the material of gate insulator to suppress the leakage current effectively and to enable the ZnO-TFT to operate successfully. The drain current on-to-off ratio of ZnO-TFTs fabricated on the substrate of glass is about 104. The average optical transmission of ZnO-TFTs in the visible portion is 80%. All above shows that it is possible to fabricate a transparent TFT using ZnO as an active channel layer instead of the traditional Si material.