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CAS IR Grid
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福建物质结构研究所 [3]
长春光学精密机械与物... [2]
物理研究所 [1]
金属研究所 [1]
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青岛生物能源与过程研... [1]
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期刊论文 [9]
会议论文 [2]
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2018 [1]
2011 [1]
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2006 [1]
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Efficient inhibition of photogenerated electron-hole recombination through persulfate activation and dual-pathway degradation of micropollutants over iron molybdate
期刊论文
OAI收割
APPLIED CATALYSIS B-ENVIRONMENTAL, 2019, 卷号: 257, 页码: -
作者:
Wang, Liang
;
Huang, Xuan
;
Han, Muen
;
Lyu, Lai
;
Li, Tong
  |  
收藏
  |  
浏览/下载:37/0
  |  
提交时间:2020/09/10
Iron molybdate
Photocatalysis
Electron-hole recombination
Persulfate activation
Micropollutant degradation
Delocalized Impurity Phonon Induced Electron-Hole Recombination in Doped Semiconductors
期刊论文
OAI收割
NANO LETTERS, 2018, 卷号: 18, 期号: 3, 页码: 1592-1599
作者:
Zhang, Lili
;
Zheng, Qijing
;
Xie, Yu
;
Lan, Zhenggang
;
Prezhdo, Oleg V.
  |  
收藏
  |  
浏览/下载:33/0
  |  
提交时间:2018/09/06
Semiconductor Doping
Electron-hole Recombination
Nonadiabaic Molecular Dynamics
Impurity-phonon Mode
Synthesis, characterization and photocatalytic performance of VDyO(x) composite under visible light irradiation
期刊论文
OAI收割
Chemical Engineering Journal, 2011, 卷号: 169, 期号: 1-3, 页码: 50-57
Y. M. He
;
L. H. Zhao
;
Y. J. Wang
;
H. J. Lin
;
T. T. Li
;
X. T. Wu
;
Y. Wu
收藏
  |  
浏览/下载:39/0
  |  
提交时间:2012/06/06
Photocatalysis
V(2)O(5)
DyVO(4)
Electron-hole separation
modified titanium-dioxide
oxidative dehydrogenation
organic
contaminants
scheelite structure
tio2 photocatalyst
doped tio2
degradation
water
photoluminescence
recombination
Electron spin relaxation by nuclei and holes in single inas quantum dots
期刊论文
iSwitch采集
Applied physics letters, 2009, 卷号: 95, 期号: 22, 页码: 3
作者:
Dou, X. M.
;
Chang, X. Y.
;
Sun, B. Q.
;
Xiong, Y. H.
;
Niu, Z. C.
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2019/05/12
Electron spin polarisation
Electron-hole recombination
Hyperfine interactions
Iii-v semiconductors
Indium compounds
Photoluminescence
Semiconductor quantum dots
Time resolved spectra
The effects of shell characteristics on the current-voltage behaviors of dye-sensitized solar cells based on ZnO/TiO2 core/shell arrays
期刊论文
OAI收割
APPLIED PHYSICS LETTERS, 2009, 卷号: 94, 期号: 26
作者:
Wang, Meili
;
Huang, Changgang
;
Cao, Yongge
;
Yu, Qingjiang
;
Guo, Wang
  |  
收藏
  |  
浏览/下载:27/0
  |  
提交时间:2019/04/09
Crystallisation
Electrodes
Electron-hole Recombination
Ii-vi Semiconductors
Nanofabrication
Nanostructured Materials
Photovoltaic Effects
Solar Cells
Sputter Deposition
Sputtered Coatings
Titanium Compounds
Wide Band Gap Semiconductors
Zinc Compounds
The effects of shell characteristics on the current-voltage behaviors of dye-sensitized solar cells based on ZnO/TiO2 core/shell arrays
期刊论文
OAI收割
Applied Physics Letters, 2009, 卷号: 94, 期号: 26
M. L. Wang, C. G. Huang, Y. G. Cao, Q. J. Yu, W. Guo, Q. F. Huang, Y. Liu, Z. Huang, J. Q. Huang, H. Wang and Z. H. Deng
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2012/11/06
crystallisation
electrodes
electron-hole recombination
II-VI
semiconductors
nanofabrication
nanostructured materials
photovoltaic
effects
solar cells
sputter deposition
sputtered coatings
titanium
compounds
wide band gap semiconductors
zinc compounds
charge recombination
tio2 films
The effects of shell characteristics on the current-voltage behaviors of dye-sensitized solar cells based on ZnO/TiO2 core/shell arrays
期刊论文
OAI收割
Applied Physics Letters, 2009, 卷号: 94, 期号: 26
M. L. Wang, C. G. Huang, Y. G. Cao, Q. J. Yu, W. Guo, Q. F. Huang, Y. Liu, Z. Huang, J. Q. Huang, H. Wang and Z. H. Deng
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2012/11/06
crystallisation
electrodes
electron-hole recombination
II-VI
semiconductors
nanofabrication
nanostructured materials
photovoltaic
effects
solar cells
sputter deposition
sputtered coatings
titanium
compounds
wide band gap semiconductors
zinc compounds
charge recombination
tio2 films
Ohmic contacts and photoconductivity of individual ZnTe nanowires
期刊论文
OAI收割
Applied Physics Letters, 2009, 卷号: 94, 期号: 4
Q. F. Meng
;
C. B. Jiang
;
S. X. Mao
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2012/04/13
electrical resistivity
electrochemical electrodes
electron traps
electron-hole recombination
gold
hole traps
II-VI semiconductors
multilayers
nanowires
nickel
ohmic contacts
photoconductivity
semiconductor quantum wires
wide band gap semiconductors
zinc
compounds
molecular-beam epitaxy
semiconductor nanowires
electrical-properties
zno nanowires
growth
photodetectors
nanoribbon
transport
layers
The spectral feature analysis of semiconductor thin disk laser (EI CONFERENCE)
会议论文
OAI收割
Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China
作者:
Li J.
;
Wang L.-J.
;
Wang L.-J.
;
Ning Y.-Q.
;
Li J.
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2013/03/25
The semiconductor thin disk laser is a new type of semiconductor laser. This work gives the basic operation function of semiconductor disk laser
and analyses the heat effect by the experimentally measured photoluminescence spectrum of the laser chip at different pump power and different temperature. We can see that: with increasing pump power
the thermal effects of the gain material becomes seriously and causes the saturation of carrier lifetime
so the electron-hole pair created in the absorbtion layer have no enough time to rate to one of the wells
and the non-radiative recombination happens in the barrier. When the thermal effects becomes stronger
the chip will not lasing. This phenomenon is from the smaller energy offset between barrier and quantum well. We optimize the original structure design and experimental technology. A non-absorbing AlGaAs layer who is transparent to the pumping and laser wavelength is added to confine the carriers in the quantum wells. At the same time a DBR with double reflecting band is induced to improve the absorbing efficiency of the pumping light. The single QW is replaced by the three narrow QWs
This three QWs structure can add the quantum state of QW
increase the recombination probability of carriers in the QWs and reduce the heat effect. The chemical etch equipment is also improved to control the surface unevenness to be within 50 nm.
Excitonic properties of vertically aligned ZnO nanotubes under high-density excitation (EI CONFERENCE)
会议论文
OAI收割
Lu Y. M.
;
Liang H. W.
;
Shen D. Z.
;
Zhang Z. Z.
;
Zhang J. Y.
;
Zhao D. X.
;
Liu Y. C.
;
Fan X. W.
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2013/03/25
In this paper
highly oriented and vertically arranged ZnO nanotubes are prepared on Al2O3 (0 0 0 1) substrate without employing any metal catalysts by plasma-assisted molecular beam epitaxy. The photoluminescence (PL) spectra at room temperature are studied under high excitation densities. Under lower excitation density (60 kW/cm2)
PL spectrum shows that one strong free exciton emission (FE) locates at 3.306 eV. As the excitation density increases up to 200 kW/cm2
a new emission peak (Pn) located at low-energy side of FE is attributed to the spontaneous emission due to an exciton-exciton (Ex-E x) scattering process from two ground state excitons
where one exciton is recombined by emitting a photon and the other is scattered into the excited states of n=2
3
4.... Under excitation density of 300 kW/cm 2
the stimulated emission originating from Ex-E x scattering is obtained. When the excitation density is above 580 kW/cm2
the emission from electron-hole plasma is observed in low-energy side of the P band and indicates a typical superradiation recombination processes with increasing excitation density. 2006 Elsevier B.V. All rights reserved.