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浏览/检索结果: 共11条,第1-10条 帮助

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Efficient inhibition of photogenerated electron-hole recombination through persulfate activation and dual-pathway degradation of micropollutants over iron molybdate 期刊论文  OAI收割
APPLIED CATALYSIS B-ENVIRONMENTAL, 2019, 卷号: 257, 页码: -
作者:  
Wang, Liang;  Huang, Xuan;  Han, Muen;  Lyu, Lai;  Li, Tong
  |  收藏  |  浏览/下载:37/0  |  提交时间:2020/09/10
Delocalized Impurity Phonon Induced Electron-Hole Recombination in Doped Semiconductors 期刊论文  OAI收割
NANO LETTERS, 2018, 卷号: 18, 期号: 3, 页码: 1592-1599
作者:  
Zhang, Lili;  Zheng, Qijing;  Xie, Yu;  Lan, Zhenggang;  Prezhdo, Oleg V.
  |  收藏  |  浏览/下载:33/0  |  提交时间:2018/09/06
Synthesis, characterization and photocatalytic performance of VDyO(x) composite under visible light irradiation 期刊论文  OAI收割
Chemical Engineering Journal, 2011, 卷号: 169, 期号: 1-3, 页码: 50-57
Y. M. He; L. H. Zhao; Y. J. Wang; H. J. Lin; T. T. Li; X. T. Wu; Y. Wu
收藏  |  浏览/下载:39/0  |  提交时间:2012/06/06
Electron spin relaxation by nuclei and holes in single inas quantum dots 期刊论文  iSwitch采集
Applied physics letters, 2009, 卷号: 95, 期号: 22, 页码: 3
作者:  
Dou, X. M.;  Chang, X. Y.;  Sun, B. Q.;  Xiong, Y. H.;  Niu, Z. C.
收藏  |  浏览/下载:24/0  |  提交时间:2019/05/12
The effects of shell characteristics on the current-voltage behaviors of dye-sensitized solar cells based on ZnO/TiO2 core/shell arrays 期刊论文  OAI收割
APPLIED PHYSICS LETTERS, 2009, 卷号: 94, 期号: 26
作者:  
Wang, Meili;  Huang, Changgang;  Cao, Yongge;  Yu, Qingjiang;  Guo, Wang
  |  收藏  |  浏览/下载:27/0  |  提交时间:2019/04/09
The effects of shell characteristics on the current-voltage behaviors of dye-sensitized solar cells based on ZnO/TiO2 core/shell arrays 期刊论文  OAI收割
Applied Physics Letters, 2009, 卷号: 94, 期号: 26
M. L. Wang, C. G. Huang, Y. G. Cao, Q. J. Yu, W. Guo, Q. F. Huang, Y. Liu, Z. Huang, J. Q. Huang, H. Wang and Z. H. Deng
收藏  |  浏览/下载:22/0  |  提交时间:2012/11/06
The effects of shell characteristics on the current-voltage behaviors of dye-sensitized solar cells based on ZnO/TiO2 core/shell arrays 期刊论文  OAI收割
Applied Physics Letters, 2009, 卷号: 94, 期号: 26
M. L. Wang, C. G. Huang, Y. G. Cao, Q. J. Yu, W. Guo, Q. F. Huang, Y. Liu, Z. Huang, J. Q. Huang, H. Wang and Z. H. Deng
收藏  |  浏览/下载:10/0  |  提交时间:2012/11/06
Ohmic contacts and photoconductivity of individual ZnTe nanowires 期刊论文  OAI收割
Applied Physics Letters, 2009, 卷号: 94, 期号: 4
Q. F. Meng; C. B. Jiang; S. X. Mao
收藏  |  浏览/下载:35/0  |  提交时间:2012/04/13
The spectral feature analysis of semiconductor thin disk laser (EI CONFERENCE) 会议论文  OAI收割
Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China
作者:  
Li J.;  Wang L.-J.;  Wang L.-J.;  Ning Y.-Q.;  Li J.
收藏  |  浏览/下载:23/0  |  提交时间:2013/03/25
The semiconductor thin disk laser is a new type of semiconductor laser. This work gives the basic operation function of semiconductor disk laser  and analyses the heat effect by the experimentally measured photoluminescence spectrum of the laser chip at different pump power and different temperature. We can see that: with increasing pump power  the thermal effects of the gain material becomes seriously and causes the saturation of carrier lifetime  so the electron-hole pair created in the absorbtion layer have no enough time to rate to one of the wells  and the non-radiative recombination happens in the barrier. When the thermal effects becomes stronger  the chip will not lasing. This phenomenon is from the smaller energy offset between barrier and quantum well. We optimize the original structure design and experimental technology. A non-absorbing AlGaAs layer who is transparent to the pumping and laser wavelength is added to confine the carriers in the quantum wells. At the same time a DBR with double reflecting band is induced to improve the absorbing efficiency of the pumping light. The single QW is replaced by the three narrow QWs  This three QWs structure can add the quantum state of QW  increase the recombination probability of carriers in the QWs and reduce the heat effect. The chemical etch equipment is also improved to control the surface unevenness to be within 50 nm.  
Excitonic properties of vertically aligned ZnO nanotubes under high-density excitation (EI CONFERENCE) 会议论文  OAI收割
Lu Y. M.; Liang H. W.; Shen D. Z.; Zhang Z. Z.; Zhang J. Y.; Zhao D. X.; Liu Y. C.; Fan X. W.
收藏  |  浏览/下载:13/0  |  提交时间:2013/03/25
In this paper  highly oriented and vertically arranged ZnO nanotubes are prepared on Al2O3 (0 0 0 1) substrate without employing any metal catalysts by plasma-assisted molecular beam epitaxy. The photoluminescence (PL) spectra at room temperature are studied under high excitation densities. Under lower excitation density (60 kW/cm2)  PL spectrum shows that one strong free exciton emission (FE) locates at 3.306 eV. As the excitation density increases up to 200 kW/cm2  a new emission peak (Pn) located at low-energy side of FE is attributed to the spontaneous emission due to an exciton-exciton (Ex-E x) scattering process from two ground state excitons  where one exciton is recombined by emitting a photon and the other is scattered into the excited states of n=2  3  4.... Under excitation density of 300 kW/cm 2  the stimulated emission originating from Ex-E x scattering is obtained. When the excitation density is above 580 kW/cm2  the emission from electron-hole plasma is observed in low-energy side of the P band and indicates a typical superradiation recombination processes with increasing excitation density. 2006 Elsevier B.V. All rights reserved.