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• 福建物质结构研究所 [3]
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• 金属研究所 [1]
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• OAI收割 [11]
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浏览/检索结果: 共12条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序作者升序作者降序 Photocatalytic Z-scheme overall water splitting for hydrogen generation with Sc2CCl2/ML (ML=MoTe2, Hf2CO2) heterostructures 期刊论文  OAI收割 INTERNATIONAL JOURNAL OF HYDROGEN ENERGY, 2024, 卷号: 59, 页码: 214-223 作者:  Li, Xiao-Ting;  Yang, Chuan-Lu;  Zhao, Wen-Kai;  Liu, Yu-Liang   |  收藏  |  浏览/下载：2/0  |  提交时间：2024/05/23 Heterostructure  Solar-to-hydrogen efficiency  Carrier transfer  Electron-hole recombination  Hydrogen generation  Thermodynamic feasibility   Efficient inhibition of photogenerated electron-hole recombination through persulfate activation and dual-pathway degradation of micropollutants over iron molybdate 期刊论文  OAI收割 APPLIED CATALYSIS B-ENVIRONMENTAL, 2019, 卷号: 257, 页码: - 作者:  Wang, Liang;  Huang, Xuan;  Han, Muen;  Lyu, Lai;  Li, Tong   |  收藏  |  浏览/下载：40/0  |  提交时间：2020/09/10 Iron molybdate  Photocatalysis  Electron-hole recombination  Persulfate activation  Micropollutant degradation   Delocalized Impurity Phonon Induced Electron-Hole Recombination in Doped Semiconductors 期刊论文  OAI收割 NANO LETTERS, 2018, 卷号: 18, 期号: 3, 页码: 1592-1599 作者:  Zhang, Lili;  Zheng, Qijing;  Xie, Yu;  Lan, Zhenggang;  Prezhdo, Oleg V.   |  收藏  |  浏览/下载：35/0  |  提交时间：2018/09/06 Semiconductor Doping  Electron-hole Recombination  Nonadiabaic Molecular Dynamics  Impurity-phonon Mode   Synthesis, characterization and photocatalytic performance of VDyO(x) composite under visible light irradiation 期刊论文  OAI收割 Chemical Engineering Journal, 2011, 卷号: 169, 期号: 1-3, 页码: 50-57 Y. M. He; L. H. Zhao; Y. J. Wang; H. J. Lin; T. T. Li; X. T. Wu; Y. Wu 收藏  |  浏览/下载：42/0  |  提交时间：2012/06/06 Photocatalysis  V(2)O(5)  DyVO(4)  Electron-hole separation  modified titanium-dioxide  oxidative dehydrogenation  organic  contaminants  scheelite structure  tio2 photocatalyst  doped tio2  degradation  water  photoluminescence  recombination   Electron spin relaxation by nuclei and holes in single inas quantum dots 期刊论文  iSwitch采集 Applied physics letters, 2009, 卷号: 95, 期号: 22, 页码: 3 作者:  Dou, X. M.;  Chang, X. Y.;  Sun, B. Q.;  Xiong, Y. H.;  Niu, Z. C. 收藏  |  浏览/下载：31/0  |  提交时间：2019/05/12 Electron spin polarisation  Electron-hole recombination  Hyperfine interactions  Iii-v semiconductors  Indium compounds  Photoluminescence  Semiconductor quantum dots  Time resolved spectra   The effects of shell characteristics on the current-voltage behaviors of dye-sensitized solar cells based on ZnO/TiO2 core/shell arrays 期刊论文  OAI收割 APPLIED PHYSICS LETTERS, 2009, 卷号: 94, 期号: 26 作者:  Wang, Meili;  Huang, Changgang;  Cao, Yongge;  Yu, Qingjiang;  Guo, Wang   |  收藏  |  浏览/下载：29/0  |  提交时间：2019/04/09 Crystallisation  Electrodes  Electron-hole Recombination  Ii-vi Semiconductors  Nanofabrication  Nanostructured Materials  Photovoltaic Effects  Solar Cells  Sputter Deposition  Sputtered Coatings  Titanium Compounds  Wide Band Gap Semiconductors  Zinc Compounds   The effects of shell characteristics on the current-voltage behaviors of dye-sensitized solar cells based on ZnO/TiO2 core/shell arrays 期刊论文  OAI收割 Applied Physics Letters, 2009, 卷号: 94, 期号: 26 M. L. Wang, C. G. Huang, Y. G. Cao, Q. J. Yu, W. Guo, Q. F. Huang, Y. Liu, Z. Huang, J. Q. Huang, H. Wang and Z. H. Deng 收藏  |  浏览/下载：24/0  |  提交时间：2012/11/06 crystallisation  electrodes  electron-hole recombination  II-VI  semiconductors  nanofabrication  nanostructured materials  photovoltaic  effects  solar cells  sputter deposition  sputtered coatings  titanium  compounds  wide band gap semiconductors  zinc compounds  charge recombination  tio2 films   The effects of shell characteristics on the current-voltage behaviors of dye-sensitized solar cells based on ZnO/TiO2 core/shell arrays 期刊论文  OAI收割 Applied Physics Letters, 2009, 卷号: 94, 期号: 26 M. L. Wang, C. G. Huang, Y. G. Cao, Q. J. Yu, W. Guo, Q. F. Huang, Y. Liu, Z. Huang, J. Q. Huang, H. Wang and Z. H. Deng 收藏  |  浏览/下载：11/0  |  提交时间：2012/11/06 crystallisation  electrodes  electron-hole recombination  II-VI  semiconductors  nanofabrication  nanostructured materials  photovoltaic  effects  solar cells  sputter deposition  sputtered coatings  titanium  compounds  wide band gap semiconductors  zinc compounds  charge recombination  tio2 films   Ohmic contacts and photoconductivity of individual ZnTe nanowires 期刊论文  OAI收割 Applied Physics Letters, 2009, 卷号: 94, 期号: 4 Q. F. Meng; C. B. Jiang; S. X. Mao 收藏  |  浏览/下载：36/0  |  提交时间：2012/04/13 electrical resistivity  electrochemical electrodes  electron traps  electron-hole recombination  gold  hole traps  II-VI semiconductors  multilayers  nanowires  nickel  ohmic contacts  photoconductivity  semiconductor quantum wires  wide band gap semiconductors  zinc  compounds  molecular-beam epitaxy  semiconductor nanowires  electrical-properties  zno nanowires  growth  photodetectors  nanoribbon  transport  layers   The spectral feature analysis of semiconductor thin disk laser (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China 作者:  Li J.;  Wang L.-J.;  Wang L.-J.;  Ning Y.-Q.;  Li J. 收藏  |  浏览/下载：28/0  |  提交时间：2013/03/25 The semiconductor thin disk laser is a new type of semiconductor laser. This work gives the basic operation function of semiconductor disk laser  and analyses the heat effect by the experimentally measured photoluminescence spectrum of the laser chip at different pump power and different temperature. We can see that: with increasing pump power  the thermal effects of the gain material becomes seriously and causes the saturation of carrier lifetime  so the electron-hole pair created in the absorbtion layer have no enough time to rate to one of the wells  and the non-radiative recombination happens in the barrier. When the thermal effects becomes stronger  the chip will not lasing. This phenomenon is from the smaller energy offset between barrier and quantum well. We optimize the original structure design and experimental technology. A non-absorbing AlGaAs layer who is transparent to the pumping and laser wavelength is added to confine the carriers in the quantum wells. At the same time a DBR with double reflecting band is induced to improve the absorbing efficiency of the pumping light. The single QW is replaced by the three narrow QWs  This three QWs structure can add the quantum state of QW  increase the recombination probability of carriers in the QWs and reduce the heat effect. The chemical etch equipment is also improved to control the surface unevenness to be within 50 nm.