中国科学院机构知识库网格系统: 检索

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	AB INITIO INVESTIGATIONS OF THE MAGNETISM IN DILUTED MAGNETIC SEMICONDUCTOR Fe-DOPED GaN 期刊论文 OAI收割 MODERN PHYSICS LETTERS B, 2014, 卷号: 28, 期号: 4, 页码: 1450031 作者: Cheng, J; Zhou, J; 徐伟; Xu, W; Dong, P 收藏 \| 浏览/下载：17/0 \| 提交时间：2016/04/08 Diluted magnetic semiconductors Fe-doped GaN first principles calculation ferromagnetism
	Calculation of impurity energy levels of transition metal ions in inorganic crystals based on electronegativity 期刊论文 OAI收割 materials research innovations, 2013, 卷号: 17, 期号: 4, 页码: 218-223 Li KY; Shao JJ; Xue DF 收藏 \| 浏览/下载：31/0 \| 提交时间：2014/04/20 II-VI SEMICONDUCTORS INDUCED CHARGE-TRANSPORT BARIUM-TITANATE DOPED SRTIO3 TIO2 STATES IRON BATIO3 GAN FE
	Growth and characterization of AlGaN/GaN heterostructures on semi-insulating GaN epilayers by molecular beam epitaxy 期刊论文 OAI收割 JOURNAL OF APPLIED PHYSICS, 2008, 卷号: 103, 期号: 9 Mei, F; Fu, QM; Peng, T; Liu, C; Peng, MZ; Zhou, JM 收藏 \| 浏览/下载：19/0 \| 提交时间：2013/09/17 FE-DOPED GAN GAN/SAPPHIRE INTERFACE (-/0)-ACCEPTOR LEVEL HEMT STRUCTURES SAPPHIRE LAYER DISLOCATION ENHANCEMENT SUBSTRATE TRANSPORT
	Investigations on the local structure and the EPR parameters for Cu(2+)-doped GaN 期刊论文 OAI收割 Modern Physics Letters B, 2008, 卷号: 22, 期号: 18, 页码: 1739-1747 L. H. Wei; S. Y. Wu; Z. H. Zhang; H. Wang; X. F. Wang 收藏 \| 浏览/下载：25/0 \| 提交时间：2012/04/13 electron paramagnetic resonance defect structures crystal-fields and spin Hamiltonians Cu(2+) GaN electron-paramagnetic-resonance atomic screening constants defect structures scf functions doped gan transition crystals ions impurities fe3+
	Growth and characterization of semi-insulating GaN films grown by MOCVD 期刊论文 OAI收割 journal of rare earths, 2006, 卷号: 24, 期号: sp.iss.si, 页码: 14-18 Fang CB; Wang XL; Hu GX; Wang JX; Wang CM; Li JM 收藏 \| 浏览/下载：57/0 \| 提交时间：2010/04/11 MOCVD GaN resistivity TSC N-TYPE GAN DOPED GAN SPECTROSCOPY CARBON FE