机构

• 计算技术研究所 [4]
• 物理研究所 [2]
• 近代物理研究所 [2]
• 化学研究所 [1]
• 新疆理化技术研究所 [1]
• 上海技术物理研究所 [1]
• 更多

采集方式

• OAI收割 [11]

内容类型

• 期刊论文 [11]

发表日期

• 2023 [1]
• 2022 [1]
• 2020 [1]
• 2019 [3]
• 2017 [1]
• 2014 [1]
• 更多

学科主题

• Physics [1]

筛选

浏览/检索结果: 共11条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 FeCrypto: Instruction Set Architecture for Cryptographic Algorithms Based on FeFET-Based In-Memory Computing 期刊论文  OAI收割 IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 2023, 卷号: 42, 期号: 9, 页码: 2889-2902 作者:  Liu, Rui   |  收藏  |  浏览/下载：18/0  |  提交时间：2023/12/04 Computing-in-memory (CiM)  cryptographic algorithm  ferroelectric field-effect transistor (FeFET)  instruc-tion set architecture (ISA)   Re-FeMAT: A Reconfigurable Multifunctional FeFET-Based Memory Architecture 期刊论文  OAI收割 IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 2022, 卷号: 41, 期号: 11, 页码: 5071-5084 作者:  Zhang, Xiaoyu;  Liu, Rui;  Song, Tao;  Yang, Yuxin;  Han, Yinhe   |  收藏  |  浏览/下载：20/0  |  提交时间：2023/07/12 Convolutional neural network (CNN)  ferroelectric field-effect transistor (FeFET)  few-shot learning  in-memory processing  ternary content-addressable memory (TCAM)   The Impact of Ferroelectric FETs on Digital and Analog Circuits and Architectures 期刊论文  OAI收割 IEEE DESIGN & TEST, 2020, 卷号: 37, 期号: 1, 页码: 79-99 作者:  Chen, Xiaoming;  Sun, Xiaoyu;  Wang, Panni;  Datta, Suman;  Hu, Xiaobo Sharon   |  收藏  |  浏览/下载：29/0  |  提交时间：2020/12/10 Iron  Transistors  Computer architecture  Switches  Capacitance  Logic gates  Computational modeling  Ferroelectric Field Effect Transistor  FeFET  Negative Capacitance Field Effect Transistor  NCFET  Preisach model  FPGAs  content addressable memories  CAM  TCAM  compute-in-memory  analog synapse   Effects of total ionizing dose on single event effect sensitivity of FRAMs 期刊论文  OAI收割 MICROELECTRONICS RELIABILITY, 2019, 卷号: 95, 页码: 1-7 作者:  Ji, Qinggang;  Liu, Jie;  Li, Dongqing;  Liu, Tianqi;  Ye, Bing   |  收藏  |  浏览/下载：58/0  |  提交时间：2019/11/10 Ferroelectric random access memory  Total ionizing dose  Single event effect  TCAD simulation   Ferroelectric FETs-Based Nonvolatile Logic-in-Memory Circuits 期刊论文  OAI收割 IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2019, 卷号: 27, 期号: 1, 页码: 159-172 作者:  Chen, Xiaoming;  Niemier, Michael;  Hu, Xiaobo Sharon;  Yin, Xunzhao   |  收藏  |  浏览/下载：83/0  |  提交时间：2019/04/03 Ferroelectric FET (FeFET)  logic-in-memory (LiM)  nonvolatile (NV) memory   Solution-Processed Flexible Organic Ferroelectric Phototransistor 期刊论文  OAI收割 ACS APPLIED MATERIALS & INTERFACES, 2017, 卷号: 9, 期号: 50, 页码: 43880-43885 作者:  Zhao, Qiang;  Wang, Hanlin;  Jiang, Lang;  Zhen, Yonggang;  Dong, Huanli   |  收藏  |  浏览/下载：34/0  |  提交时间：2019/04/09 p(Vdf-trfe)  Nonvolatile Memory (Nvm)  Organic Ferroelectric Field-effect Transistor (Ofefet)  Organic Phototransistor (Opt)  Organic Field-effect Transistor (Ofet)   An Epitaxial Ferroelectric Tunnel Junction on Silicon 期刊论文  OAI收割 ADVANCED MATERIALS, 2014, 卷号: 26, 期号: 42, 页码: 7185 Li, ZP; Guo, X; Lu, HB; Zhang, ZL; Song, DS; Cheng, SB; Bosman, M; Zhu, J; Dong, ZL; Zhu, WG 收藏  |  浏览/下载：30/0  |  提交时间：2015/04/14 ferroelectric tunnel junction  non-volatile memory  tunneling electroresistance  epitaxial growth  pulsed laser deposition   serial ferroelectric memory ionizing radiation effects and annealing characteristics 期刊论文  OAI收割 ACTA PHYSICA SINICA, 2013, 卷号: 62, 期号: 15, 页码: - 作者:  Zhang Xing-Yao;  Guo Qi;  Lu Wu;  Zhang Xiao-Fu;  Zheng Qi-Wen 收藏  |  浏览/下载：34/0  |  提交时间：2013/11/07 ferroelectric random memory  ionizing radiation effects  annealing characteristics   Ferroelectric Random Access Memories 期刊论文  OAI收割 Journal of Nanoscience and Nanotechnology, 2012, 卷号: 12, 期号: 10, 页码: 7619-7627 - 收藏  |  浏览/下载：25/0  |  提交时间：2016/05/16 Ferroelectric  Memory  FeRAM  FeFET  Pb(Zr,Ti)O-3  SrBi2Ta2O9  BiFeO3