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Construction of an operando dual-beam fourier transform infrared spectrometer and its application in the observation of isobutene reactions over nano-sized HZSM-5 zeolite 期刊论文  OAI收割
CHINESE JOURNAL OF CATALYSIS, 2017, 卷号: 38, 期号: 1, 页码: 13-19
作者:  Xin, Qin;  Liu, Jiaxu;  Wang, Jilei;  Zhou, Wei;  Miao, Cuilan
  |  收藏  |  浏览/下载：32/0  |  提交时间：2019/06/20
Mechanism and kinetics of titanium hydrolysis in concentrated titanyl sulfate solution based on infrared and Raman spectra 期刊论文  OAI收割
CHEMICAL ENGINEERING SCIENCE, 2015, 卷号: 134, 期号: SEP, 页码: 196-204
作者:  Wang, Weijing;  Liu, Yahui;  Xue, Tianyan;  Li, Jie;  Chen, Desheng
收藏  |  浏览/下载：166/0  |  提交时间：2015/09/07
Simulation and experiment of the static FTIR based on micro multi-step mirrors (EI CONFERENCE) 会议论文  OAI收割
International Symposium on Photoelectronic Detection and Imaging 2011: Sensor and Micromachined Optical Device Technologies, May 24, 2011 - May 26, 2011, Beijing, China
作者:  Liang Z.-Z.;  Zhang J.;  Zhang J.;  Zhang J.;  Zhu W.-B.
收藏  |  浏览/下载：30/0  |  提交时间：2013/03/25
In recent years  Fourier transform spectrometer (FTS) with small size and low mass is required in many applications with growing need for real-time and small platform spectral detection. In this paper  a micro Fourier transform infrared spectrometer (FTIR) based on spatial modulation mode was designed. This spectrometer has the advantages of high stability and simplified configuration. It also promises optical path differences (OPD) with high precision  as MOEMS technology is used in manufacturing the key components. The simulation and the experiments with regard to this FTIR configuration have been done. Firstly  the diffraction effect of the micro multi-step mirrors (MMSMs) is studied. We discuss the influence to the reversed spectrum by different mirror widths and different diffraction distances. Secondly  we simulate and analyze the influence of the source solid angle to the spectral resolution. Thirdly  we set up the theoretical model of the collimation error which is mainly from the defocus of the optical system and analyze the result caused by the collimation error. Fourthly  a new discrete Fourier transform arithmetic using least-squares cosines progression (LSCP) is proposed which can reconstruct the spectrum with nonuniform sampled signals. Finally  the MMSMs are fabricated used the MOEMS technology and the structural parameters are tested. 2011 Copyright Society of Photo-Optical Instrumentation Engineers (SPIE).  
Design and demonstration of micro multi-step mirrors and light source in micro FTIR (EI CONFERENCE) 会议论文  OAI收割
6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2011, February 20, 2011 - February 23, 2011, Kaohsiung, Taiwan
Liang Z.; Fu J.; Feng C.; Liang J.
收藏  |  浏览/下载：41/0  |  提交时间：2013/03/25
To obtain high resolution  high signal-to-noise ratio (SNR)  high reliability and real time in wide spectral range  we study the space modulation Micro Fourier Transform Spectrometer (FTS) based on multi-step mirrors covering the spectral range of 3-5m and 8-12 m in theory and experiment. The influences of spectrum reconstruction caused by the diffraction and extended light source in Fourier Transform Infrared Spectrometer (FTIR) are analyzed. A method to reduce the noises in spectrum reconstruction and the relationship between coherent intensity and solid angle of light source are discussed. An extended light source with suitable size is chosen  considering the requirement of SNR and spectrum resolving power in the optical design. Furthermore  the fabrication of micro multi-step mirrors  which is the core part of FTS  is investigated. Three methods for fabricating multi-step micro mirrors are demonstrated. 2011 IEEE.  
Preparation and Spectroscopy Investigation of Vanadium Oxide Films Deposited by DC Magnetron Sputtering 期刊论文  OAI收割
SPECTROSCOPY AND SPECTRAL ANALYSIS, 2011, 卷号: 31, 页码: 95-99
作者:  Li Li-sha;  Cui Hai-ning;  Jiang Zhen-yi
  |  收藏  |  浏览/下载：18/0  |  提交时间：2018/05/31
Synthesis and Characterization of Metallofullerene Derivatives La@C-82-(C4N2H8)(m)H-n 期刊论文  OAI收割
CHEMICAL JOURNAL OF CHINESE UNIVERSITIES-CHINESE, 2010, 卷号: 31, 期号: 10, 页码: 1976-1981
作者:  Dai, FC;  Chang, F;  Ren TX(任同祥);  Sun BY(孙宝云);  Ren, TX
收藏  |  浏览/下载：86/0  |  提交时间：2016/06/29
Effect of Different Tillage Managements on Black Humic Fractions and IR Spectral Feature 期刊论文  OAI收割
SPECTROSCOPY AND SPECTRAL ANALYSIS, 2009, 卷号: 29, 期号: 10, 页码: 2642-2645
作者:  Lue Yizhong;  Cong Weiwei;  Lian Xiaojuan
  |  收藏  |  浏览/下载：15/0  |  提交时间：2021/02/02
Effect of Different Tillage Managements on Black Humic Fractions and IR Spectral Feature 期刊论文  OAI收割
SPECTROSCOPY AND SPECTRAL ANALYSIS, 2009, 卷号: 29, 期号: 10, 页码: 2642-2645
作者:  Lue Yizhong;  Cong Weiwei;  Lian Xiaojuan
  |  收藏  |  浏览/下载：21/0  |  提交时间：2021/02/02
Effect of preozonation on the characteristic transformation of fulvic acid and its subsequent trichloromethane formation potential: Presence or absence of bicarbonate 期刊论文  OAI收割
CHEMOSPHERE, 2008, 卷号: 71, 期号: 9, 页码: 1639-1645
作者:  Li, Jing;  Liu, Huijuan;  Zhao, Xu;  Qu, Juhui;  Liu, Ruiping
收藏  |  浏览/下载：25/0  |  提交时间：2015/08/21
The effect of N/Si ratio on the a-SiiH/SiNx interface of a-SirH/SiNx TFT (EI CONFERENCE) 会议论文  OAI收割
Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China
Liu J. e.; Gao W.; Liao Y.; Jing H.; Fu G.
收藏  |  浏览/下载：24/0  |  提交时间：2013/03/25
The threshold voltage of a-Si: H/SiNx TFT will shift under long time gate bias stress  it is mostly leaded by charge trapping in gate insulator and defect creation in semiconductor. And it is hard to be applied in AMOLED for TFT because of its threshold voltage shift. In allusion to the phenomenon of charge trapping  a series of SiNx insulating films in different N/Si(0. 87 -1.68) ratio were deposited by PECVD in this paper  controlling different flow ratio of source gas SiH4 and NH3  and a great deal of tests (ellipsometer  infrared absorption (FTIR) and Electron Dispersion Spectrum (EDS) test ) were done on these samples. Based on these SiNx insulators  three different capacitance samples in MIS structure were done  degraded experiments and C-V tests on these samples were done. The C-V curve shift of capacitance which contained SiNx with slightly N-rich(N/Si is bigger slightly than 1. 33) was not evident before and after degradation  this result indicated that the defect density of this type SiN x was smaller  and could restrain charge chapping in the interface of a-Si:H/SiNx effectively. So that as gate insulator of TFT  SiN x with slightly N-rich could decrease the threshold voltage shift of TFT and enhance its stability effectively.