机构

• 金属研究所 [2]
• 长春光学精密机械与物... [2]
• 上海微系统与信息技术... [1]
• 长春应用化学研究所 [1]

采集方式

• OAI收割 [6]

内容类型

• 期刊论文 [4]
• 会议论文 [2]

发表日期

• 2020 [2]
• 2007 [3]
• 1999 [1]

学科主题

• Chemistry,... [1]

筛选

浏览/检索结果: 共6条，第1-6条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Introducing Electrode Contact by Controlled Micro-Alloying in Few-Layered GaTe Field Effect Transistors 期刊论文  OAI收割 CRYSTALS, 2020, 卷号: 10, 期号: 3, 页码: 9 作者:  Xia, Xiuxin;  Sun, Xingdan;  Wang, Hanwen;  Li, Xiaoxi   |  收藏  |  浏览/下载：29/0  |  提交时间：2021/02/02 contact  alloying  GaTe  Pd electrode   Introducing Electrode Contact by Controlled Micro-Alloying in Few-Layered GaTe Field Effect Transistors 期刊论文  OAI收割 CRYSTALS, 2020, 卷号: 10, 期号: 3, 页码: 9 作者:  Xia, Xiuxin;  Sun, Xingdan;  Wang, Hanwen;  Li, Xiaoxi   |  收藏  |  浏览/下载：23/0  |  提交时间：2021/02/02 contact  alloying  GaTe  Pd electrode   Electrophoresis deposition of carbon nanotubes for triode type CNT-FED cathode (EI CONFERENCE) 会议论文  OAI收割 Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China 作者:  Song H.;  Jiang H.;  Li Z.;  Li Z. 收藏  |  浏览/下载：253/0  |  提交时间：2013/03/25 This study explores an electrophoretic process to selectively assemble carbon nanotube emitters into normal triode structure for triode type carbon nanotube field emission display cathode. In this process  the carbon nanotubes are migrated and deposited into triode structure by an applied voltage between the gate electrode and cathode electrod. The applied voltage is also used to keep the carbon nanotubes off adsorption on the gate electrode. The experiment results show that the carbon nanotubes are selectively defined inside of gate holes and each hole has the same packing density. The process which is low cost and easily scaling up is an alternative method to prepare triode type carbon nanotube field emission display cathode.   Study of the fabrication of ZnO-TFT (EI CONFERENCE) 会议论文  OAI收割 Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China 作者:  Wang C. 收藏  |  浏览/下载：29/0  |  提交时间：2013/03/25 Znic Oxide (ZnO) as a shorter wavelength luminescent material concerning its outstanding properties of a wide band-gap semiconductor  it can be used as the active channel layer to fabricate thin film transistor (TFT) and transparent thin film transistor(TTFT). In this paper  we introduced ZnO-TFT using different substrate material  insulator material  electrode material of gate  source and drain in its device.   Influence of N-2 flow ratio on the properties of hafnium nitride thin films prepared by DC magnetron sputtering 期刊论文  OAI收割 APPLIED SURFACE SCIENCE, 2007, 卷号: 253, 期号: 20, 页码: 8538-8542 Yuan, LY; Fang, GJ; Li, C; Wang, MJ; Liu, NS; Lei, A; Cheng, YZ; Gao, HM; Zhao, XZ 收藏  |  浏览/下载：24/0  |  提交时间：2012/03/24 HF-N FILMS  GATE-ELECTRODE  PHYSICAL-PROPERTIES  METAL NITRIDE  OXIDE  RESISTIVITY  MGO(001)  DEVICES  GROWTH  LAYERS   Ion channel sensor 期刊论文  OAI收割 analytical letters, 1999, 卷号: 32, 期号: 7, 页码: 1271-1286 Luo LQ; Yang XR; Wang EK 收藏  |  浏览/下载：158/16  |  提交时间：2010/11/04 SUPPORTED PLANAR MEMBRANES  GOLD ELECTRODE  GATE RESPONSE  LIPID-MEMBRANES  MONOLAYER  RECEPTORS  ACETYLCHOLINE  MODULATION  BIOSENSOR  BILAYERS