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	Linearity measurement for image-intensified CCD (EI CONFERENCE) 会议论文 OAI收割 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optical Test and Measurement Technology and Equipment, April 26, 2010 - April 29, 2010, Dalian, China 作者: Zhang L.; Zhao Y.; Zhao Y.; Zhao Y.; Yan F. 收藏 \| 浏览/下载：47/0 \| 提交时间：2013/03/25 To the characteristic of the ultraviolet CCD (UV ICCD) technique of the linearity measurement of the UV ICCD camera is studied based on the theory of radiometry. Approach of linearity measurement is discussed and a kind of measurement system of the UV ICCD has been developed based on the method of neutral density filter. It is very important that the transmittance of the filter is independent of the wavelength in the method of neutral density filter. Black metal screen mesh with different transmittance is used in our system and calibration of the filters' transmittance in different working positions has been done. Meanwhile to assure the uniform of the received radiation on the target of the detector at any test points an integrating sphere is placed behind the neutral filter to balance light. The whole measurement system mainly consists of a deuterium lamp with high stabilization the attenuation film with transmission integrating sphere optical guide and electro-shift platform. Auto control is realized via special software during the test. With this instrument the linearity of the UV ICCD was measured. Experimental results show that the nonlinearity of the UV ICCD under fixed-gain is less than 2% and the uncertainty of measurement system is less than 4%. 2010 Copyright SPIE - The International Society for Optical Engineering.
	Gain Characteristic of Erbium Doped Fiber Amplifier 会议论文 OAI收割 2008 International Conference on Optical Instruments and Technology: Advanced Sensor Technologies and Applications, Bellingham Zhang, Lihua; Du, Yungang; Xi, Ying; Li, Jijun; Zhao, Chunwang 收藏 \| 浏览/下载：18/0 \| 提交时间：2014/12/07 Optical communications EDFA Gain characteristic
	Study of microsphere plate photomultiplier tube (EI CONFERENCE) 会议论文 OAI收割 ICO20: Remote Sensing and Infrared Devices and Systems, August 21, 2005 - August 26, 2005, Changchun, China 作者: Wang X.; Li Y.; Li Y.; Li Y.; Li Y. 收藏 \| 浏览/下载：42/0 \| 提交时间：2013/03/25 The photomultiplier tube (PMT) that can work in different wavelength is an important detector device in remote sense technology. Microsphere plate using glass beads 50to 70m in diameter sintered together is the core component of the microsphere plate photomultiplier tube It is a novel two-dimension electron multiplier. The electrons gain for a single plate is about 1017 and do not have the phenomenon of ion-feedback. Furthermore the fabrication process is very easy. In this paper much interest was put on the microsphere plate photomultiplier tube. Based on the analyses from the theory and the experiment result we point out the key technology for fabricating PMT is how to obtain glass beads with narrow range in diameter and how to sinter the glass beads with a sufficient pylome. Factors affect the gradating technology and sintering process along with the solution to them is presented. In the last the structure scheme and technological characteristic for fabricating microsphere plate photomultiplier tube were given. The pulse rising-time of MSP-PMT is below 400ps suitable to the detection of high-speed pulse. As easy to be fabricated and has great advantage over MCP multiplier in the ratio of performance to price the microsphere plate photomultiplier tube is a promising dim-light detector.
	Theoretical results of vertical external cavity surface emitting laser (VECSEL) (EI CONFERENCE) 会议论文 OAI收割 IRMMW-THz 2006 - 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics, Sep 18 - 22 2006, Shanghai, China 作者: Qin L. 收藏 \| 浏览/下载：24/0 \| 提交时间：2013/03/25 We calculate the characteristic parameters of 980nm infrared vertical external cavity surface emitting laser with the KP method and give the result of the relative longitudinal confinement factor threshold gain and output power. 2006 IEEE.
	Vertical-external-cavity surface-emitting lasers operating at different wavelength: Design, numerical simulation, and characteristics (EI CONFERENCE) 会议论文 OAI收割 Optoelectronic Materials and Devices for Optical Communications, November 7, 2005 - November 10, 2005, Shanghai, China 作者: Qin L.; Jiang H.; Wang L.; Wang L.; Wang L. 收藏 \| 浏览/下载：25/0 \| 提交时间：2013/03/25 We describe design numerical simulation and characteristics of high-power optical pumped VECSELs at different wavelength (980nm and 1300nm). The device design realizes the integrating diode-pumped lasers with vertical-cavity surface-emitting laser structure drawing on the advantages of both. With periodical gain element structure optical pumped VECSEL is scalable to watt level output. The characteristics such as threshold condition and output power are calculated theoretically. An optimum number of quantum wells and external mirror reflectivity are obtained from the calculation results and the thermal characteristic is also considered. Finally the calculation results also predict high output power in this kind of device structure.
	Theoretical analysis of 980nm high power Vertical External-cavity Surface-emitting Semiconductor Laser (VECSEL) (EI CONFERENCE) 会议论文 OAI收割 ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China 作者: Wang L.-J.; Wang L.-J.; Ning Y.-Q.; Qin L. 收藏 \| 浏览/下载：33/0 \| 提交时间：2013/03/25 By using bottom-emitting structure we will develop laser diode (LD) pumped 980 nm VECSEL with active region of InGaAs/GaAsP/AlGaAs system. Because the thickness of barrier layer and absorption layer exceed that of quantum well single well approximation model (KP method) can be used to calculate the band structure of VECSEL. The Schrodinger equation of finite deep potential well can be adopted to calculate the energy level structures of electron heavy and light holes. According to the transition selection rule we theoretically obtained the emitting wavelength of VECSEL and calculated quasi-Femi energy of valence band and conduction band based on the analysis of energy level structure of electron and holes. By analyzing the gain of strained quantum wells we calculated the gain of VECSEL using transition matrix elements of electron heavy and light holes. We give out the threshold gain output power and other characteristic parameters. We will study the configuration of VECSEL and pumping scheme. We designed external cavity mirror active region and bottom-emitting structure. A LD-pumped vertical external cavity surface-emitting laser whose output power is greater than 1.0 W can be predicted.
	Study on the effects of well number on temperature characteristics in 1.3-mu m InGaAsP-InP quantum-well lasers 期刊论文 OAI收割 Infrared Physics & Technology, 2004, 卷号: 45, 期号: 3, 页码: 209-215 J. Y. Jin; D. C. Tian; J. Shi; T. N. Li 收藏 \| 浏览/下载：14/0 \| 提交时间：2012/04/14 MOVPE InGaAsP/InGaAsP SL-MQW well number characteristic temperature semiconductor lasers semiconductor-lasers dfb laser operation amplifiers design gain