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CAS IR Grid
机构
长春光学精密机械与物... [2]
上海光学精密机械研究... [2]
金属研究所 [1]
半导体研究所 [1]
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OAI收割 [6]
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期刊论文 [4]
会议论文 [2]
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2014 [2]
2009 [1]
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2004 [1]
学科主题
半导体材料 [1]
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Laser-induced damage of the optical films prepared by electron beam evaporation and ion beam sputtering in vacuum
期刊论文
OAI收割
optik, 2014, 卷号: 125, 期号: 21, 页码: 6474
作者:
Ling, Xiulan
;
Wang, Gao
;
Zhao, Yuanan
;
Shao, Jianda
;
Fan, Zhengxiu
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  |  
浏览/下载:19/0
  |  
提交时间:2016/11/28
Vacuum
Laser-induced damage
High reflection films
Organic contamination
Laser-induced damage of the optical films prepared by electron beam evaporation and ion beam sputtering in vacuum
期刊论文
OAI收割
optik, 2014, 卷号: 125, 期号: 21, 页码: 6474
作者:
Ling, Xiulan
;
Wang, Gao
;
Zhao, Yuanan
;
Shao, Jianda
;
Fan, Zhengxiu
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2016/11/28
Vacuum
Laser-induced damage
High reflection films
Organic contamination
Improvement in crystal quality of ZnO film on Si substrate by using a homo-buffer layer
期刊论文
OAI收割
materials science in semiconductor processing, 2009, 卷号: 12, 期号: 6, 页码: 233-237
作者:
Zhao J
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浏览/下载:50/4
  |  
提交时间:2011/07/05
ZnO
Pulsed laser deposition
X-ray diffraction
Photoluminescence
Reflection high-energy electron diffraction
PULSED-LASER DEPOSITION
THIN-FILMS
PLD TECHNIQUE
GROWTH
SAPPHIRE
TEMPERATURE
Determination of optical constants of zirconia and silica thin films in UV to visible range (EI CONFERENCE)
会议论文
OAI收割
3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies, AOMATT 2007: Advanced Optical Manufacturing Technologies, July 8, 2007 - July 12, 2007, Chengdu, China
作者:
Liu L.
;
Yang H.
;
Liu L.
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  |  
浏览/下载:44/0
  |  
提交时间:2013/03/25
A curve fitting method for determining the optical constants of some dielectric thin films is described with dispersion theory in the paper. A computer program based on Matlab is developed and optimized. The fitting errors are analyzed with theoretical data
which gives very high accurate results. A program is applied to fitting the measured photometric spectra of ion sputtered zirconia and silica thin films in 200-850nm spectra range. The thickness is verified with the method of grazing x-ray diffraction. With the thickness known
the optical constants of zirconia films near the absorption range are obtained with single-wavelength method. As a result
quite good fitting results are obtained with high accuracy. Finally
an ultraviolet (UV) high-pass optical filter is designed with optical constants extracted by this method. The transmission and reflection spectra of the filter are measured and compared to designed spectra. A good coherence was derived.
Investigation of growth mode in ZnO thin films prepared at different temperature by plasma-molecular beam epitaxy (EI CONFERENCE)
会议论文
OAI收割
13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004, 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004
Liang H. W.
;
Lu Y. M.
;
Shen D. Z.
;
Yan J. F.
;
Li B. H.
;
Zhang J. Y.
;
Liu Y. C.
;
Fan X. W.
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  |  
浏览/下载:47/0
  |  
提交时间:2013/03/25
High-quality ZnO thin films on c-plane sapphire (Al2O 3) substrates were prepared by plasma-molecular beam epitaxy (P-MBE). The influence of growth temperature on growth mode of ZnO was investigated. Real-time monitored by reflection high-energy electron diffraction (RHEED) images show that
below 500 C
ZnO thin film was grown by three-dimension (3D) growth mode. While the two-dimension (2D) growth mode was obtained above growth temperature of 650 C. Atomic force microscopy (AFM) images present that the surface morphology of ZnO thin film with 2D growth is improved and X-ray rocking curves (XRC) indicate that the full width at half maximum (FWHM) of the ZnO (0 0 2) peak becomes narrow. From the photoluminescence (PL) spectra
ultraviolet (UV) emission peak exhibits obvious blue-shift for the samples grown at lower temperature
which is attributed to the effect of the quantum confinement arisen from small crystal grain sizes. The minimum carrier concentration of N=7.661016 cm-3 was obtained in the ZnO thin films with the 2D grown
which is closed to that of bulk ZnO. 2005 Elsevier B.V. All rights reserved.
Heteroepitaxial growth of LaAlO3 films on Si (100) by laser molecular beam epitaxy
期刊论文
OAI收割
Journal of Crystal Growth, 2004, 卷号: 271, 期号: 1-2, 页码: 165-170
W. F. Xiang
;
H. B. Lu
;
Z. H. Chen
;
X. B. Lu
;
M. He
;
H. Tian
;
Y. L. Zhou
;
C. R. Li
;
X. L. Ma
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  |  
浏览/下载:16/0
  |  
提交时间:2012/04/14
annealing
reflection high-energy electron diffraction
X-ray
diffraction
epitaxial growth
laser molecular beam epitaxy
LaAlO3 film
thin-films
buffer layers
in-situ
srtio3
si(100)
deposition
silicon
mocvd