中国科学院机构知识库网格系统: 检索

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	InGaAs/graphene infrared photodetectors with enhanced responsivity 期刊论文 OAI收割 Materials Research Express, 2019, 卷号: 6, 期号: 11 作者: Yang,Qi; Wu,Qiming; Luo,Wei; Yao,Wei; Yan,Shunya \| 收藏 \| 浏览/下载：92/0 \| 提交时间：2019/12/03 graphene InGaAs infrared photodetectors responsivity
	Theoretical analysis and experimental study of the space-charge-screening effect in uni-traveling-carrier photodiode 期刊论文 OAI收割 acta physica sinica, 2010, 卷号: 59, 期号: 7, 页码: 4524-4529 Guo JC (Guo Jian-Chuan); Zuo YH (Zuo Yu-Hua); Zhang Y (Zhang Yun); Zhang LZ (Zhang Ling-Zi); Cheng BW (Cheng Bu-Wen); Wang QM (Wang Qi-Ming) 收藏 \| 浏览/下载：51/0 \| 提交时间：2010/08/17 uni-traveling-carrier photodiode space charge screening effect MICROWAVE PHOTODETECTORS DISTORTION INGAAS
	Wavelength extended InGaAs/InAlAs/InP photodetectors using n-on-p configuration optimized for back illumination 期刊论文 OAI收割 INFRARED PHYSICS & TECHNOLOGY, 2009, 卷号: 52, 期号: 1, 页码: 52-56 Zhang, YG(张永刚）; Gu, Y; Tian, ZB; Li, AZ; Zhu, XR; Wang, K 收藏 \| 浏览/下载：38/0 \| 提交时间：2012/03/24 VAPOR-PHASE EPITAXY DARK CURRENT INGAAS PHOTODETECTORS INFRARED DETECTORS PHOTODIODES EFFICIENCY BUFFER MOCVD
	Effects of rapid thermal annealing on self-assembled InGaAs/GaAs quantum dots superlattice 期刊论文 OAI收割 journal of crystal growth, 2000, 卷号: 208, 期号: 1-4, 页码: 791-794 Zhuang QD; Li JM; Wang XX; Zeng YP; Wang YT; Wang BQ; Pan L; Wu J; Kong MY; Lin LY 收藏 \| 浏览/下载：74/0 \| 提交时间：2010/08/12 InGaAs/GaAs quantum dots superlattice annealing X-ray MOLECULAR-BEAM EPITAXY INFRARED PHOTODETECTORS STRAIN RELAXATION LUMINESCENCE HETEROSTRUCTURES DEPENDENCE ABSORPTION THRESHOLD OPERATION ISLANDS
	Tuning of conduction intersublevel absorption wavelengths in (In, Ga)As/GaAs quantum-dot nanostructures 期刊论文 OAI收割 applied physics letters, 2000, 卷号: 76, 期号: 24, 页码: 3537-3539 Pan D; Towe E; Kennerly S; Kong MY 收藏 \| 浏览/下载：84/0 \| 提交时间：2010/08/12 INFRARED PHOTODETECTORS ENERGY-LEVELS ISLANDS GROWTH INGAAS GAAS