机构

• 半导体研究所 [7]

采集方式

• OAI收割 [6]
• iSwitch采集 [1]

内容类型

• 期刊论文 [7]

发表日期

• 2009 [2]
• 2008 [1]
• 2006 [3]
• 2005 [1]

学科主题

• 光电子学 [4]
• 半导体材料 [1]
• 半导体物理 [1]

筛选

浏览/检索结果: 共7条，第1-7条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 A selective area growth double stack active layer electroabsorption modulator integrated with a distributed feedback laser 期刊论文  iSwitch采集 Chinese science bulletin, 2009, 卷号: 54, 期号: 20, 页码: 3627-3632 作者:  Zhu HongLiang;  Liang Song;  Zhao LingJuan;  Kong DuanHua;  Zhu NingHua 收藏  |  浏览/下载：35/0  |  提交时间：2019/05/12 Electroabsorption modulator integrated with a dfb laser  Selective area growth  Butt joint  Double stack active layer   A selective area growth double stack active layer electroabsorption modulator integrated with a distributed feedback laser 期刊论文  OAI收割 chinese science bulletin, 2009, 卷号: 54, 期号: 20, 页码: 3627-3632 Zhu HL (Zhu HongLiang); Liang S (Liang Song); Zhao LJ (Zhao LingJuan); Kong DH (Kong DuanHua); Zhu NH (Zhu NingHua); Wang W (Wang Wei) 收藏  |  浏览/下载：133/27  |  提交时间：2010/03/08 electroabsorption modulator integrated with a DFB laser   A novel butt-joint scheme for the preparation of electro-absorptive lasers 期刊论文  OAI收割 journal of physics d-applied physics, 2008, 卷号: 41, 期号: 3, 页码: art. no. 035108 作者:  Pan JQ 收藏  |  浏览/下载：70/6  |  提交时间：2010/03/08 INTEGRATED DFB LASER   10 GHz optical short pulse generation using tandem electroabsorption modulators monolithically integrated with distributed feedback laser by ultra-low-pressure selective area growth 期刊论文  OAI收割 acta physica sinica, 2006, 卷号: 55, 期号: 1, 页码: 261-266 作者:  Pan JQ 收藏  |  浏览/下载：192/2  |  提交时间：2010/04/11 ultra-low-pressure  selective area growth  integrated optoelectronics  ultra short optical pulse  DFB LASER   High-quality multiple quantum wells selectively grown with tapered masks by ultra-low-pressure MOCVD 期刊论文  OAI收割 optical materials, 2006, 卷号: 28, 期号: 8-9, 页码: 1037-1040 作者:  Pan JQ 收藏  |  浏览/下载：72/0  |  提交时间：2010/04/11 selective-area growth  ultra-low-pressure  metal-organic chemical vapor deposition  tapered mask  photoluminescence  BANDGAP ENERGY CONTROL  INTEGRATED DFB LASER  EPITAXY   High-quality multiple quantum wells selectively grown on taper-patterned substrates by ultra-low-pressure MOCVD 期刊论文  OAI收割 acta physica sinica, 2006, 卷号: 55, 期号: 6, 页码: 2982-2985 作者:  Pan JQ 收藏  |  浏览/下载：43/0  |  提交时间：2010/04/11 ultra-low-pressure  selective area growth  tapered mask  BANDGAP ENERGY CONTROL  INTEGRATED DFB LASER  EPITAXY   Tandem electroabsorption modulators integrated with DFB laser by ultra-low-pressure selective-area-growth MOCVD for 10 GHz optical short pulse generation 期刊论文  OAI收割 semiconductor science and technology, 2005, 卷号: 20, 期号: 8, 页码: 882-885 Zhao, Q; Pan, JQ; Zhang, J; Zhou, GT; Wu, J; Wang, LF; Wang, W 收藏  |  浏览/下载：119/47  |  提交时间：2010/03/17 摘要: A novel device of tandem MQW EAMs monolithically integrated with a DFB laser is fabricated by an ultra-low-pressure (22 mbar) selective area growth MOCVD technique. Experimental results exhibit superior device characteristics with low threshold of 19 mA  output light power of 4.5 mW  and over 20 dB extinction ratio when coupled to a single mode fibre. Moreover  over 10 GHz modulation bandwidth is developed with a driving voltage of 2 V. Using this sinusoidal voltage driven integrated device  10 GHz repetition rate pulse with an actual width of 13.7 ps without any compression elements is obtained.