中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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Effects of forming cavities on the lattice quality and carrier profile in the B doped silicon 期刊论文  OAI收割
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 卷号: 72, 期号: 2-3, 页码: 142
Wang, SB; Zhu, PR
收藏  |  浏览/下载:27/0  |  提交时间:2013/09/17
The crystal structural evolution of nano-Si anode caused by lithium insertion and extraction at room temperature 期刊论文  OAI收割
SOLID STATE IONICS, 2000, 卷号: 135, 期号: 1-4, 页码: 181
Li, H; Huang, XJ; Chen, LQ; Zhou, GW; Zhang, Z; Yu, DP; Mo, YJ; Pei, N
收藏  |  浏览/下载:26/0  |  提交时间:2013/09/23
High-frequency hydrogen-related infrared modes in silicon grown in a hydrogen atmosphere 期刊论文  OAI收割
physical review b, 1999, 卷号: 59, 期号: 11, 页码: 7500-7506
Pajot B; Clerjaud B; Xu ZJ
收藏  |  浏览/下载:57/0  |  提交时间:2010/08/12