机构

• 金属研究所 [2]
• 长春光学精密机械与物... [1]
• 过程工程研究所 [1]
• 上海微系统与信息技术... [1]
• 近代物理研究所 [1]

采集方式

• OAI收割 [6]

内容类型

• 期刊论文 [5]
• 会议论文 [1]

发表日期

• 2018 [1]
• 2011 [1]
• 2008 [1]
• 2001 [1]
• 2000 [2]

学科主题

• Physics, A... [1]

筛选

浏览/检索结果: 共6条，第1-6条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Enhanced NO2 Sensing Property of ZnO by Ga Doping and H-2 Activation 期刊论文  OAI收割 PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2018, 卷号: 215, 期号: 11 作者:  Wang, Z;  Xie, Z;  Bian, LZ;  Li, WH;  Zhou, XY   |  收藏  |  浏览/下载：30/0  |  提交时间：2018/12/29 Ga-doped ZnO  ROOM-TEMPERATURE  gas sensors  DOPED ZNO  H-2 activation  THIN-FILMS  high response and selectivity  SENSOR  NO2  NANOPARTICLES  GRAPHENE  IN2O3  NANOCOMPOSITES  FORMALDEHYDE  FABRICATION   Control of N/N2 species ratio in NO plasma for p-type doping of ZnO (EI CONFERENCE) 会议论文  OAI收割 作者:  Chen X.;  Liu L.;  Liu L.;  Li B.;  Li B. 收藏  |  浏览/下载：21/0  |  提交时间：2013/03/25 Nitrogen-doped ZnO thin films were grown on c-plane sapphire (Al 2O3) substrates via plasma-assisted molecular beam epitaxy using plasma activated nitric oxide (NO) as the oxygen source and dopant. X-ray diffraction measurements indicate that a small NO flux benefits the crystal quality of the thin films. Hall effect measurements indicate that the electron density of the ZnO films decreases gradually with decreasing NO flux  and the conduction reverses to p-type at a certain flux. Optical emission spectra indicate that the N atom content in the NO plasma increases with decreasing NO flux  and the origin of this is discussed. X-ray photoelectron spectroscopy measurements demonstrate that the number of N atom occupied O sites in the ZnO lattice increases correspondingly. 2011 American Institute of Physics.   Blue-violet luminescence double peak of In-doped films prepared by radio frequency sputtering 期刊论文  OAI收割 JOURNAL OF LUMINESCENCE, 2008, 卷号: 128, 期号: 3, 页码: 328-332 作者:  Peng, Xingping;  Zang, Hang;  Wang, Zhiguang;  Xu, Jinzhang;  Wang, Yinyue   |  收藏  |  浏览/下载：17/0  |  提交时间：2010/10/29 structure  photoluminescence  In-doped ZnO films  radio frequency sputtering   ZAO: an attractive potential substitute for ITO in flat display panels 期刊论文  OAI收割 Materials Science and Engineering B-Solid State Materials for Advanced Technology, 2001, 卷号: 85, 期号: 2-3, 页码: 212-217 M. Chen; Z. L. Pei; C. Sun; J. Gong; R. F. Huang; L. S. Wen 收藏  |  浏览/下载：27/0  |  提交时间：2012/04/14 transparent conducting films  ZAO  reactive magnetron sputtering  tin oxide-films  sn-doped in2o3  optical-properties  electrical-properties  indium oxide  evaporated indium  thin-films  zno  films  al  rf   Intrinsic limit of electrical properties of transparent conductive oxide films 期刊论文  OAI收割 Journal of Physics D-Applied Physics, 2000, 卷号: 33, 期号: 20, 页码: 2538-2548 M. Chen; Z. L. Pei; X. Wang; Y. H. Yu; X. H. Liu; C. Sun; L. S. Wen 收藏  |  浏览/下载：21/0  |  提交时间：2012/04/14 doped in2o3 films  dominant scattering mechanisms  amorphous indium  oxide  optical-properties  thin-films  zno films  structural-properties  reactive evaporation  physical-properties  spray-pyrolysis   Intrinsic limit of electrical properties of transparent conductive oxide films 期刊论文  OAI收割 JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2000, 卷号: 33, 期号: 20, 页码: 2538-2548 Chen, M; Pei, ZL; Wang, X; Yu, YH; Liu, XH; Sun, C; Wen, LS 收藏  |  浏览/下载：15/0  |  提交时间：2012/03/24 DOPED IN2O3 FILMS  DOMINANT SCATTERING MECHANISMS  AMORPHOUS INDIUM OXIDE  OPTICAL-PROPERTIES  THIN-FILMS  ZNO FILMS  STRUCTURAL-PROPERTIES  REACTIVE EVAPORATION  PHYSICAL-PROPERTIES  SPRAY-PYROLYSIS