机构

• 半导体研究所 [17]
• 长春光学精密机械与物... [1]
• 上海技术物理研究所 [1]

采集方式

• OAI收割 [13]
• iSwitch采集 [6]

内容类型

• 期刊论文 [17]
• 会议论文 [2]

发表日期

• 2015 [1]
• 2006 [2]
• 2005 [1]
• 2003 [2]
• 2001 [3]
• 2000 [7]
• 更多

学科主题

• 半导体材料 [5]
• 半导体物理 [4]
• 光电子学 [2]

筛选

浏览/检索结果: 共19条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序作者升序作者降序 Performance Characterization of Thin-Film InGaAs Solar Cells with Double-Hetero-Structure and InP Window-Layers of Various Thicknesses 期刊论文  OAI收割 Journal of Computational and Theoretical Nanoscience, 2015, 卷号: 12, 期号: 5, 页码: 736-741 - 收藏  |  浏览/下载：273/0  |  提交时间：2016/05/16 DOUBLE-HETERO-STRUCTURE  HIGH SHORT-CIRCUIT CURRENT  INP WINDOW LAYER  SPECIFIC CONTACT RESISTIVITY  THIN-FILM INGAAS SOLAR CELL   Optical characteristics of inas quantum dots on gaas matrix by using various ingaas structures 期刊论文  iSwitch采集 Journal of wuhan university of technology-materials science edition, 2006, 卷号: 21, 期号: 2, 页码: 76-79 作者:  Kong Lingmin;  Cai Jiafa;  Wu Zhengyun;  Gong Zheng;  Fang Zhidan 收藏  |  浏览/下载：25/0  |  提交时间：2019/05/12 Ingaas layer  Inas quantum dots  Time-resolved pl spectra   Optical characteristics of InAs quantum dots on GaAs matrix by using various InGaAs structures 期刊论文  OAI收割 journal of wuhan university of technology-materials science edition, 2006, 卷号: 21, 期号: 2, 页码: 76-79 Kong LM (Kong Lingmin); Cai JF (Cai Jiafa); Wu ZY (Wu Zhengyun); Gong Z (Gong Zheng); Fang ZD (Fang Zhidan); Niu ZC (Niu Zhichuan) 收藏  |  浏览/下载：70/0  |  提交时间：2010/04/11 InGaAs layer  InAs quantum dots  time-resolved PL spectra  1.3 MU-M  CARRIER DYNAMICS  LASERS  GROWTH  WAVELENGTH  EMISSION  ISLANDS  LAYERS  SIZE   Theoretical analysis of 980nm high power Vertical External-cavity Surface-emitting Semiconductor Laser (VECSEL) (EI CONFERENCE) 会议论文  OAI收割 ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China 作者:  Wang L.-J.;  Wang L.-J.;  Ning Y.-Q.;  Qin L. 收藏  |  浏览/下载：30/0  |  提交时间：2013/03/25 By using bottom-emitting structure  we will develop laser diode (LD) pumped 980 nm VECSEL with active region of InGaAs/GaAsP/AlGaAs system. Because the thickness of barrier layer and absorption layer exceed that of quantum well  single well approximation model (KP method) can be used to calculate the band structure of VECSEL. The Schrodinger equation of finite deep potential well can be adopted to calculate the energy level structures of electron  heavy and light holes. According to the transition selection rule  we theoretically obtained the emitting wavelength of VECSEL and calculated quasi-Femi energy of valence band and conduction band based on the analysis of energy level structure of electron and holes. By analyzing the gain of strained quantum wells  we calculated the gain of VECSEL using transition matrix elements of electron  heavy and light holes. We give out the threshold gain  output power and other characteristic parameters. We will study the configuration of VECSEL and pumping scheme. We designed external cavity mirror  active region and bottom-emitting structure. A LD-pumped vertical external cavity surface-emitting laser whose output power is greater than 1.0 W can be predicted.   Optical properties of ingaas self-assembled quantum dots with inalas wetting layer 期刊论文  iSwitch采集 Acta physica sinica, 2003, 卷号: 52, 期号: 8, 页码: 2087-2091 作者:  Zhu, TW;  Zhang, YC;  Xu, B;  Liu, FQ;  Wang, ZG 收藏  |  浏览/下载：16/0  |  提交时间：2019/05/12 Ingaas quantum dots  Inalas wetting layer  Photoluminescence spectra   Optical properties of InGaAs self-assembled quantum dots with InAlAs wetting layer 期刊论文  OAI收割 acta physica sinica, 2003, 卷号: 52, 期号: 8, 页码: 2087-2091 作者:  Xu B 收藏  |  浏览/下载：307/12  |  提交时间：2010/08/12 InGaAs quantum dots  InAlAs wetting layer  photoluminescence spectra  TEMPERATURE-DEPENDENCE   Photoluminescence properties of self-organized ingaas/gaas quantum dot structures 期刊论文  iSwitch采集 Journal of infrared and millimeter waves, 2001, 卷号: 20, 期号: 1, 页码: 20-24 作者:  Niu, ZC;  Wang, XD;  Miao, ZH;  Feng, SL 收藏  |  浏览/下载：30/0  |  提交时间：2019/05/12 Inas/gaas self-organized quantum dots photoluminescence  Molecular beam epitaxy  Ingaas capping layer   Photoluminescence properties of self-organized InGaAs/GaAs quantum dot structures 期刊论文  OAI收割 journal of infrared and millimeter waves, 2001, 卷号: 20, 期号: 1, 页码: 20-24 Niu ZC; Wang XD; Miao ZH; Feng SL 收藏  |  浏览/下载：123/4  |  提交时间：2010/08/12 InAs/GaAs self-organized quantum dots photoluminescence  molecular beam epitaxy  InGaAs capping layer  1.35 MU-M  OPTICAL-PROPERTIES  EMISSION  LAYER   Photoluminescence characterization of 1.3 mu m In(Ga)As/GaAs islands grown by molecular beam epitaxy 会议论文  OAI收割 10th international conference on narrow gap semiconductors and related small energy phenomena, physics and applications (ngs10), kanazawa, japan, may 27-31, 2001 Niu ZC; Wang XD; Miao ZH; Lan Q; Kong YC; Zhou DY; Feng SL 收藏  |  浏览/下载：26/0  |  提交时间：2010/10/29 molecular beam epitaxy  InGaAs islands  photolumineseence  line-width  1.3 MU-M  INAS/GAAS QUANTUM DOTS  OPTICAL-PROPERTIES  CAP LAYER  GAAS  LUMINESCENCE  STRAIN   Effects of interdiffusion on the luminescence of inas/gaas quantum dots covered by ingaas overgrowth layer 期刊论文  iSwitch采集 Journal of crystal growth, 2000, 卷号: 220, 期号: 3, 页码: 216-219 作者:  Liu, HY;  Wang, XD;  Wei, YQ;  Xu, B;  Ding, D 收藏  |  浏览/下载：27/0  |  提交时间：2019/05/12 Rapid thermal annealing  Inas quantum dots  Ingaas overgrowth layer  Photoluminescence