中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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浏览/检索结果: 共19条,第1-10条 帮助

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Performance Characterization of Thin-Film InGaAs Solar Cells with Double-Hetero-Structure and InP Window-Layers of Various Thicknesses 期刊论文  OAI收割
Journal of Computational and Theoretical Nanoscience, 2015, 卷号: 12, 期号: 5, 页码: 736-741
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Optical characteristics of inas quantum dots on gaas matrix by using various ingaas structures 期刊论文  iSwitch采集
Journal of wuhan university of technology-materials science edition, 2006, 卷号: 21, 期号: 2, 页码: 76-79
作者:  
Kong Lingmin;  Cai Jiafa;  Wu Zhengyun;  Gong Zheng;  Fang Zhidan
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Optical characteristics of InAs quantum dots on GaAs matrix by using various InGaAs structures 期刊论文  OAI收割
journal of wuhan university of technology-materials science edition, 2006, 卷号: 21, 期号: 2, 页码: 76-79
Kong LM (Kong Lingmin); Cai JF (Cai Jiafa); Wu ZY (Wu Zhengyun); Gong Z (Gong Zheng); Fang ZD (Fang Zhidan); Niu ZC (Niu Zhichuan)
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Theoretical analysis of 980nm high power Vertical External-cavity Surface-emitting Semiconductor Laser (VECSEL) (EI CONFERENCE) 会议论文  OAI收割
ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China
作者:  
Wang L.-J.;  Wang L.-J.;  Ning Y.-Q.;  Qin L.
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Optical properties of ingaas self-assembled quantum dots with inalas wetting layer 期刊论文  iSwitch采集
Acta physica sinica, 2003, 卷号: 52, 期号: 8, 页码: 2087-2091
作者:  
Zhu, TW;  Zhang, YC;  Xu, B;  Liu, FQ;  Wang, ZG
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Optical properties of InGaAs self-assembled quantum dots with InAlAs wetting layer 期刊论文  OAI收割
acta physica sinica, 2003, 卷号: 52, 期号: 8, 页码: 2087-2091
作者:  
Xu B
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Photoluminescence properties of self-organized ingaas/gaas quantum dot structures 期刊论文  iSwitch采集
Journal of infrared and millimeter waves, 2001, 卷号: 20, 期号: 1, 页码: 20-24
作者:  
Niu, ZC;  Wang, XD;  Miao, ZH;  Feng, SL
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Photoluminescence properties of self-organized InGaAs/GaAs quantum dot structures 期刊论文  OAI收割
journal of infrared and millimeter waves, 2001, 卷号: 20, 期号: 1, 页码: 20-24
Niu ZC; Wang XD; Miao ZH; Feng SL
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Photoluminescence characterization of 1.3 mu m In(Ga)As/GaAs islands grown by molecular beam epitaxy 会议论文  OAI收割
10th international conference on narrow gap semiconductors and related small energy phenomena, physics and applications (ngs10), kanazawa, japan, may 27-31, 2001
Niu ZC; Wang XD; Miao ZH; Lan Q; Kong YC; Zhou DY; Feng SL
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Effects of interdiffusion on the luminescence of inas/gaas quantum dots covered by ingaas overgrowth layer 期刊论文  iSwitch采集
Journal of crystal growth, 2000, 卷号: 220, 期号: 3, 页码: 216-219
作者:  
Liu, HY;  Wang, XD;  Wei, YQ;  Xu, B;  Ding, D
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