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	Aqueous Solution Induced High-Dielectric-Constant AlOx : Y Films for Thin-Film Transistor Applications 期刊论文 OAI收割 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 卷号: 18, 期号: 11, 页码: 7566-7572 作者: Liang, Lingyan; Wu, Weihua; Cao, Hongtao; Lan, Linfeng; Yao, Meiyi \| 收藏 \| 浏览/下载：34/0 \| 提交时间：2018/12/04 Amorphous Oxide Semiconductors Field-effect Transistors Low-temperature Gate Dielectrics Low-voltage Photochemical Activation Electrical Performance Combustion Synthesis High-mobility Electronics
	Aqueous Solution Induced High-Dielectric-Constant AlOx : Y Films for Thin-Film Transistor Applications 期刊论文 OAI收割 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 卷号: 18, 期号: 11, 页码: 7566-7572 作者: Wu, Weihua; Liang, Yu; Cao, Hongtao; Lan, Linfeng; Yao, Meiyi \| 收藏 \| 浏览/下载：36/0 \| 提交时间：2018/12/04 Amorphous Oxide Semiconductors Field-effect Transistors Low-temperature Gate Dielectrics Low-voltage Photochemical Activation Electrical Performance Combustion Synthesis High-mobility Electronics
	Research on Low Flow Rate and Voltage Micro Differential Mobility Spectrometry 期刊论文 OAI收割 CHINESE JOURNAL OF ANALYTICAL CHEMISTRY, 2015, 卷号: 43, 期号: 12, 页码: 1814-1819 作者: Li Shan; Chen Chi-Lai; Zhu De-Quan; Wang Hong-Wei; Liu You-Jiang 收藏 \| 浏览/下载：34/0 \| 提交时间：2017/12/18 Differential Mobility Spectrometry Field Detection Miniaturization Low fLow Rates Low Voltage
	Novel Conjugated Polymers Based on Dithieno[3,2-b:6,7-b]carbazole for Solution Processed Thin-Film Transistors 期刊论文 OAI收割 macromolecular rapid communications, 2012, 卷号: 33, 期号: 20, 页码: 1759-1764 Chen YG; Liu CF; Tian HK; Bao C; Zhang XJ; Yan DH; Geng YH; Wang FS 收藏 \| 浏览/下载：33/0 \| 提交时间：2013/04/22 FIELD-EFFECT TRANSISTORS CHARGE-CARRIER MOBILITY HIGH-PERFORMANCE SEMICONDUCTING POLYMERS ORGANIC TRANSISTORS BACKBONE CURVATURE LOW-TEMPERATURE COPOLYMERS DESIGN ANTHRADITHIOPHENE
	Design of an improved data signal timing for an amorphous silicon active-matrix organic LED display (EI CONFERENCE) 会议论文 OAI收割 ICO20: Display Devices and Systems, August 21, 2005 - August 26, 2005, Changchun, China 作者: Zhang Z.-W. 收藏 \| 浏览/下载：19/0 \| 提交时间：2013/03/25 The most critical issue in the design of an active matrix organic light emitting diode (AM-OLED) display pixel is the pixel to the pixel luminance uniformity. By substituting four-thin film transistor (TFT) pixel circuit for two-TFT pixel circuit the luminous uniformity has great improved but it requires more components than the two-TFT pixel circuit. There are some barriers needed to resolve to utilize hydrogenated amorphous silicon transistor to lit OLED such as low field effect mobility low output current and threshold voltage shift. In this article a two-a-Si:H TFT pixel circuit was designed which consisted of one named switching TFT and the other named driving TFT. The driving TFT gate line structure modified and a data signal timing improved were reported. The modified driving TFT can provide enough current about 30 microampere to lit OLED and the novel data signal timing can provide a constant current to OLED by restraining the driving TFT threshold voltage variation. In the novel data signal timing the control signals to the driving TFT gate include a data signal and a reverse data signal. The signals alteration is performed either at a frame rate or at a line rate. By experiments the driving TFT output current value is plotted as a function of the time in different reversed voltage value. When the magnitude of the positive data signal and the negative data signal is equal the variety of Vth is smallest about 1.28V after a fixed stressing time of 1.33104min which shows the novel data signal timing can improved the driving TFT output-input current stability.
	Sequential resonant tunnelling through Landau levels in GaAs/AlAs superlattices 期刊论文 OAI收割 microelectronic engineering, 1998, 卷号: 43-44, 期号: 0, 页码: 349-354 作者: Liu J 收藏 \| 浏览/下载：81/0 \| 提交时间：2010/08/12 GaAs/AlAs superlattices transport tunnelling Landau level LOW-FIELD MOBILITY SEMICONDUCTOR SUPERLATTICE TEMPERATURE-DEPENDENCE CONDUCTANCE TRANSPORT LOCALIZATION MINIBANDS NEGATIVE DIFFERENTIAL CONDUCTIVITY
	Sequential resonant tunnelling through Landau levels in GaAs/AlAs superlattices 会议论文 OAI收割 2nd international conference on low dimensional structures and devices, lisbon, portugal, may 19-21, 1997 作者: Liu J 收藏 \| 浏览/下载：30/0 \| 提交时间：2010/11/15 GaAs/AlAs superlattices transport tunnelling Landau level NEGATIVE DIFFERENTIAL CONDUCTIVITY LOW-FIELD MOBILITY SEMICONDUCTOR SUPERLATTICE TEMPERATURE-DEPENDENCE CONDUCTANCE TRANSPORT LOCALIZATION MINIBANDS