机构

• 合肥物质科学研究院 [5]
• 物理研究所 [1]

采集方式

• OAI收割 [6]

内容类型

• 期刊论文 [6]

发表日期

• 2017 [3]
• 2016 [2]
• 2011 [1]

学科主题

筛选

浏览/检索结果: 共6条，第1-6条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Interface quality modulation, band alignment modification and optimization of electrical properties of HfGdO/Ge gate stacks by nitrogen incorporation 期刊论文  OAI收割 JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 695, 期号: 无, 页码: 2199-2206 作者:  Gao, J.;  He, G.;  Fang, Z. B.;  Lv, J. G.;  Liu, M. 收藏  |  浏览/下载：18/0  |  提交时间：2018/07/04 High-k Gate Dielectrics  Interface Quality  Band Alignment  Electrical Properties  Leakage Current Mechanism   Annealing-temperature-modulated optical, electrical properties, and leakage current transport mechanism of sol-gel-processed high-k HfAlOX gate dielectrics 期刊论文  OAI收割 CERAMICS INTERNATIONAL, 2017, 卷号: 43, 期号: 3, 页码: 3101-3106 作者:  Jin, P.;  He, G.;  Fang, Z. B.;  Liu, M.;  Xiao, D. Q. 收藏  |  浏览/下载：24/0  |  提交时间：2018/07/04 High-k Hfalox Gate Dielectrics  Sol-gel  Optical Properties  Electrical Properties  Leakage Current Transport Mechanism   Modulation of interfacial and electrical properties of ALD-derived HfAlO/Al2O3/Si gate stack by annealing temperature 期刊论文  OAI收割 JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 691, 期号: 无, 页码: 504-513 作者:  Gao, J.;  He, G.;  Liu, M.;  Lv, J. G.;  Sun, Z. Q. 收藏  |  浏览/下载：25/0  |  提交时间：2017/11/21 High-k Dielectric  Interface Thermal Stability  Atomic-layer-deposition  Band Alignment  Electrical Properties  Leakage Current Mechanism   Annealing Temperature Dependent Electrical Properties and Leakage Current Transport Mechanisms in Atomic Layer Deposition-Derived Al2O3-Incorporated HfO2/Si Gate Stack 期刊论文  OAI收割 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2016, 卷号: 16, 期号: 8, 页码: 8075-8082 作者:  Gao, Juan;  He, Gang;  Zhang, Jiwen;  Chen, Xuefei;  Jin, Peng 收藏  |  浏览/下载：26/0  |  提交时间：2017/11/21 High-k Gate Dielectric  Atomic Layer Deposition  Electrical Properties  Leakage Current Mechanism   Microstructure, optical, electrical properties, and leakage current transport mechanism of sol-gel-processed high-k HfO2 gate dielectrics 期刊论文  OAI收割 CERAMICS INTERNATIONAL, 2016, 卷号: 42, 期号: 6, 页码: 6761-6769 作者:  Jin, Peng;  He, Gang;  Xiao, Dongqi;  Gao, Juan;  Liu, Mao 收藏  |  浏览/下载：22/0  |  提交时间：2017/10/18 High-k Gate Dielectrics  Sol-gel  Electrical Properties  Leakage Current Transport Mechanism  Optical Properties   Asymmetric electrical properties in Pt/Ba0.5Sr0.5Ti0.99Co0.01O3/Nb-doped SrTiO3 capacitors 期刊论文  OAI收割 PHYSICA B-CONDENSED MATTER, 2011, 卷号: 406, 期号: 18, 页码: 3406 Liu, WF; Wang, SY; Wang, C 收藏  |  浏览/下载：19/0  |  提交时间：2013/09/17 CHEMICAL-VAPOR-DEPOSITION  THIN-FILMS  CONDUCTION MECHANISM  IRO2 ELECTRODES  LEAKAGE CURRENT  IMPRINT  RESISTANCE