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浏览/检索结果: 共48条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Annealing-induced evolution in interface stability and electrical performance of sputtering-driven rare-earth-based gate oxides 期刊论文  OAI收割 JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 卷号: 778, 期号: 无, 页码: 579-587 作者:  Wang, Die;  He, Gang;  Liang, Shuang;  Liu, Mao   |  收藏  |  浏览/下载：63/0  |  提交时间：2020/03/31 Dy2O3 gate dielectrics  High-k  Annealing temperature  Optical properties  Electrical characteristics   Organic Field-Effect Transistor for Energy-Related Applications: Low-Power-Consumption Devices, Near-Infrared Phototransistors, and Organic Thermoelectric Devices 期刊论文  OAI收割 ADVANCED ENERGY MATERIALS, 2018, 卷号: 8, 期号: 24 作者:  Ren, Xiaochen;  Yang, Fangxu;  Gao, Xiong;  Cheng, Shanshan;  Zhang, Xiaotao   |  收藏  |  浏览/下载：50/0  |  提交时间：2019/04/09 High-k Dielectrics  Nir Phototransistors  Organic Field-effect Transistors  Organic Thermoelectrics  Subthreshold Swing   Performance Enhancement for Charge Trapping Memory by Using Al2O3/HfO2/Al2O3 Tri-Layer High-k Dielectrics and High Work Function Metal Gate 期刊论文  OAI收割 ECS Journal of Solid State Science and Technology, 2018 作者:  Hou CZ(侯朝昭);  Wu ZH(吴振华);  Yin HX(殷华湘)   |  收藏  |  浏览/下载：23/0  |  提交时间：2019/05/05 Polymer/Silicon Nanoparticle Hybrid Layer as High-k Dielectrics in Organic Thin-Film Transistors 期刊论文  OAI收割 JOURNAL OF PHYSICAL CHEMISTRY C, 2018, 卷号: 122, 期号: 21, 页码: 11214-11221 作者:  Wang, Xuesong;  Wang, He;  Li, Yao;  Shi, Zuosen;  Yan, Donghang   |  收藏  |  浏览/下载：44/0  |  提交时间：2019/04/09 Interface Modulation and Optimization of Electrical Properties of HfGdO/GaAs Gate Stacks by ALD-Derived Al2O3 Passivation Layer and Forming Gas Annealing 期刊论文  OAI收割 ADVANCED ELECTRONIC MATERIALS, 2018, 卷号: 4, 期号: 4, 页码: 9 作者:     |  收藏  |  浏览/下载：65/0  |  提交时间：2019/06/10 electrical properties  forming gas annealing  high-k gate dielectrics  interface chemistry  metal-oxide-semiconductor capacitors   Interface chemistry and electronic structure of ALD-derived HfAlO/Ge gate stacks revealed by X-ray photoelectron spectroscopy 期刊论文  OAI收割 JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 716, 期号: 无, 页码: 1-6 作者:  He, Gang;  Jiang, Shanshan;  Li, Wendong;  Zheng, Changyong;  He, Huaxin 收藏  |  浏览/下载：38/0  |  提交时间：2018/05/25 High-k Gate Dielectric  Atomic-layer-deposition  Interface Stability  Phase Separation  Annealing Temperature   Annealing temperature-dependent microstructure and optical and electrical properties of solution-derived Gd-doped ZrO2 high-k gate dielectrics 期刊论文  OAI收割 JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, 2017, 卷号: 83, 期号: 3, 页码: 675-682 作者:  Zhu, L.;  He, G.;  Sun, Z. Q.;  Liu, M.;  Jiang, S. S.   |  收藏  |  浏览/下载：24/0  |  提交时间：2018/08/16 Gd-doped Zro2 Gate Dielectric Thin Films  Annealing Temperature  Sol-gel  Optical Properties  Electrical Properties   Modulation of interfacial and electrical properties of HfGdO/GaAs gate stacks by ammonium sulfide passivation and rapid thermal annealing 期刊论文  OAI收割 JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 704, 期号: 无, 页码: 322-328 作者:  Jiang, S. S.;  He, G.;  Liang, S.;  Zhu, L.;  Li, W. D. 收藏  |  浏览/下载：20/0  |  提交时间：2018/07/04 High-k Gate Dielectrics  Interface Chemistry  Xps Electrical Properties  Cmos Devices   In situ study on the thermal stability and interfaces properties of er2o3/al2o3/si multi stacked films by x-ray photoelectron spectroscopy 期刊论文  iSwitch采集 Superlattices and microstructures, 2017, 卷号: 104, 页码: 415-421 作者:  Gao, Baolong;  Mamat, Mamatrishat;  Ghupur, Yasenjan;  Ablat, Abduleziz;  Ibrahim, Kurash 收藏  |  浏览/下载：33/0  |  提交时间：2019/04/23 High-k dielectric  Pld  Er2o3  Xps   Interfacial modulation and electrical properties improvement of solution-processed ZrO2 gate dielectrics upon Gd incorporation 期刊论文  OAI收割 JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 699, 期号: 无, 页码: 415-420 作者:  Xiao, D. Q.;  He, G.;  Lv, J. G.;  Wang, P. H.;  Liu, M. 收藏  |  浏览/下载：14/0  |  提交时间：2018/07/04 High-k Gate Dielectrics  Gd Incorporation  Xps  Electrical Properties  Sol-gel