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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [10]
物理研究所 [9]
合肥物质科学研究院 [6]
计算技术研究所 [3]
新疆理化技术研究所 [3]
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期刊论文 [45]
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Development and Insulation Performance Evaluation of Experimental Sample for a Direct Current High-Voltage Transmission Line
期刊论文
OAI收割
FUSION SCIENCE AND TECHNOLOGY, 2024
作者:
Wang, Rixin
;
Xu, Yongjian
;
Jiang, Caichao
;
Liang, Lizhen
;
Liu, Wei
  |  
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2024/11/20
Negative-ion-based neutral beam injector system
direct current high-voltage transmission line
insulation performance evaluation test bed
leakage current
Investigating the TDDB lifetime growth mechanism caused by proton irradiation in partially depleted SOI devices
期刊论文
OAI收割
MICROELECTRONICS RELIABILITY, 2018, 卷号: 81, 期号: 2, 页码: 112-116
作者:
Ma, T (Ma, Teng)
;
Yu, XF (Yu, Xuefeng)
;
Cui, JW (Cui, Jiangwei)
;
Zheng, QW (Zheng, Qiwen)
;
Zhou, H (Zhou, Hang)
  |  
收藏
  |  
浏览/下载:64/0
  |  
提交时间:2018/03/14
Reliability
Proton Irradiation
Radiation Induced Leakage Current (Rilc)
Time-dependent Dielectric Breakdown (Tddb)
Total Ionizing Does (Tid)
Effects of Surface Oxygenic Functional Groups on the Electrochemical Properties of Supercapacitor
期刊论文
OAI收割
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2017, 卷号: 17, 期号: 6, 页码: 3729-3734
作者:
Du, Xuan
;
Ma, Shuhui
;
Zhao, Wei
;
Qi, Tao
;
Hua, Chao
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2017/07/17
Supercapacitor
Surface Oxygenic Functional Groups
Reduction
Electrochemical Properties
Leakage Current
Interface quality modulation, band alignment modification and optimization of electrical properties of HfGdO/Ge gate stacks by nitrogen incorporation
期刊论文
OAI收割
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 695, 期号: 无, 页码: 2199-2206
作者:
Gao, J.
;
He, G.
;
Fang, Z. B.
;
Lv, J. G.
;
Liu, M.
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2018/07/04
High-k Gate Dielectrics
Interface Quality
Band Alignment
Electrical Properties
Leakage Current Mechanism
Annealing-temperature-modulated optical, electrical properties, and leakage current transport mechanism of sol-gel-processed high-k HfAlOX gate dielectrics
期刊论文
OAI收割
CERAMICS INTERNATIONAL, 2017, 卷号: 43, 期号: 3, 页码: 3101-3106
作者:
Jin, P.
;
He, G.
;
Fang, Z. B.
;
Liu, M.
;
Xiao, D. Q.
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2018/07/04
High-k Hfalox Gate Dielectrics
Sol-gel
Optical Properties
Electrical Properties
Leakage Current Transport Mechanism
Modulation of interfacial and electrical properties of ALD-derived HfAlO/Al2O3/Si gate stack by annealing temperature
期刊论文
OAI收割
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 691, 期号: 无, 页码: 504-513
作者:
Gao, J.
;
He, G.
;
Liu, M.
;
Lv, J. G.
;
Sun, Z. Q.
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2017/11/21
High-k Dielectric
Interface Thermal Stability
Atomic-layer-deposition
Band Alignment
Electrical Properties
Leakage Current Mechanism
Effect of a Bi-Cr-O synthetic multi-phase on the microstructure and electrical properties of ZnO-Bi2O3 varistor ceramics
期刊论文
OAI收割
CERAMICS INTERNATIONAL, 2016, 卷号: 42, 期号: 13, 页码: 14350-14354
作者:
Xu, Zhijun
;
Bai, Hairui
;
Ma, Shuai
;
Chu, Ruiqing
;
Hao, Jigong
收藏
  |  
浏览/下载:36/0
  |  
提交时间:2017/02/27
Zno-Bi2O3-based varistors
High nonlinear coefficient
Low leakage current
Synthetic multi-phase
Annealing Temperature Dependent Electrical Properties and Leakage Current Transport Mechanisms in Atomic Layer Deposition-Derived Al2O3-Incorporated HfO2/Si Gate Stack
期刊论文
OAI收割
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2016, 卷号: 16, 期号: 8, 页码: 8075-8082
作者:
Gao, Juan
;
He, Gang
;
Zhang, Jiwen
;
Chen, Xuefei
;
Jin, Peng
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2017/11/21
High-k Gate Dielectric
Atomic Layer Deposition
Electrical Properties
Leakage Current Mechanism
Influence of Cr2O3 on highly nonlinear properties and low leakage current of ZnO-Bi2O3 varistor ceramics
期刊论文
OAI收割
CERAMICS INTERNATIONAL, 2016, 卷号: 42, 期号: 9, 页码: 10547-10550
作者:
Bai, Hairui
;
Li, Shuhui
;
Zhao, Yunhan
;
Xu, Zhijun
;
Chu, Ruiqing
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2017/02/27
ZnO-Bi2O3-based varistors
High nonlinear coefficient
Low leakage current
Microstructure, optical, electrical properties, and leakage current transport mechanism of sol-gel-processed high-k HfO2 gate dielectrics
期刊论文
OAI收割
CERAMICS INTERNATIONAL, 2016, 卷号: 42, 期号: 6, 页码: 6761-6769
作者:
Jin, Peng
;
He, Gang
;
Xiao, Dongqi
;
Gao, Juan
;
Liu, Mao
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2017/10/18
High-k Gate Dielectrics
Sol-gel
Electrical Properties
Leakage Current Transport Mechanism
Optical Properties