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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [3]
金属研究所 [2]
上海硅酸盐研究所 [2]
苏州纳米技术与纳米仿... [1]
长春光学精密机械与物... [1]
大连化学物理研究所 [1]
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OAI收割 [10]
iSwitch采集 [2]
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期刊论文 [11]
会议论文 [1]
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2019 [3]
2014 [3]
2012 [1]
2010 [1]
2005 [1]
2003 [3]
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Chemistry;... [1]
半导体材料 [1]
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Impedance study of spark-plasma-sintered lutetium titanate ceramics: Effect of post-annealing
期刊论文
OAI收割
CERAMICS INTERNATIONAL, 2019, 卷号: 45, 期号: 13, 页码: 16317
作者:
An, Liqiong
;
Zhang, Jian
;
Fan, Runhua
;
Goto, Takashi
;
Wang, Shiwei
  |  
收藏
  |  
浏览/下载:73/0
  |  
提交时间:2019/12/26
Pyrochlore
Lu2Ti2O7
Post-annealing
Electrical conductivity
Favorable growth of well-crystallized layered hybrid perovskite by combination of thermal and solvent assistance
期刊论文
OAI收割
JOURNAL OF POWER SOURCES, 2019, 卷号: 422, 页码: 156-162
作者:
Xue, Caiyun
;
Shi, Yantao
;
Zhang, Chunyang
;
Lv, Yanping
;
Feng, Yulin
  |  
收藏
  |  
浏览/下载:164/0
  |  
提交时间:2019/06/20
2D perovskite solar cells
Flat-casting
Post-annealing
Crystallinity
Ambient stability
Synthesis, physical properties, and annealing investigation of new layered Bi-chalcogenide LaOBiHgS3
期刊论文
OAI收割
CHINESE PHYSICS B, 2019, 卷号: 28, 期号: 1, 页码: 4
作者:
Yu, Yi
;
Wang, Chunchang
;
Li, Liang
;
Li, Qiuju
;
Cheng, Chao
  |  
收藏
  |  
浏览/下载:33/0
  |  
提交时间:2020/03/31
thermoelectric material
Bi-chalcogenide
post annealing
Synthesis of yttrium silicates by annealing r.f. sputtered glassy coatings
期刊论文
OAI收割
Vacuum, 2014, 卷号: 101, 页码: 382-386
J. Zhang
;
S. Mraz
;
J. H. Yao
;
J. M. Schneider
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2014/03/14
Yttrium silicates
r.f. sputtering and post-annealing
environmental barrier coatings
silicon-nitride
thin-films
temperature
deposition
composites
ceramics
stress
growth
Effect of post-weld annealing on microstructure and properties of NiTi welding joints
期刊论文
OAI收割
Materials Research Innovations, 2014, 卷号: 18, 页码: 588-591
D.
;
Jiang Yang, H. C.
;
Zhao, M. J.
;
Rong, L. J.
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2015/05/08
Post-weld annealing
NiTi alloys
Martensitic transformation
shape-memory alloys
behavior
Enhancement Mode (E-Mode) AlGaN/GaN MOSFET With 10(-13) A/mm Leakage Current and 10(12) ON/OFF Current Ratio
期刊论文
OAI收割
IEEE ELECTRON DEVICE LETTERS, 2014, 卷号: 35, 期号: 12, 页码: 1200-1202
作者:
Cai, Y (蔡勇)
收藏
  |  
浏览/下载:38/0
  |  
提交时间:2015/02/03
Post-gate annealing (PGA)
GaN
enhancement mode
MOSFET
ON/OFF current ratio
mesa isolation current
Post-annealing Effect on Microstructures and Thermoelectric Properties of Bi0.45Sb1.55Te3 Thin Films Deposited by Co-sputtering
期刊论文
OAI收割
JOURNAL OF ELECTRONIC MATERIALS, 2012, 卷号: 41, 期号: 11, 页码: 3068-3072
作者:
Song, Junqiang
;
Chen, Xihong
;
Tang, Yunshan
;
Yao, Qin
;
Chen, Lidong
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2013/07/19
Thermoelectric
bismuth telluride
sputtering
thin film
post-annealing
Neutron irradiation and post annealing effect on sapphire by positron annihilation
期刊论文
OAI收割
APPLIED RADIATION AND ISOTOPES, 2010, 卷号: 68, 期号: 9, 页码: 1699-1702
作者:
Han, JC
;
Zhang, HL
;
Zhang, MF
;
Wang, BY
;
Li, ZX
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2016/06/29
Sapphire
Neutron irradiation
Post annealing
Positron lifetime
CDB
Vacuum annealing effects on properties of ITO films prepared by reactive low voltage ion plating technique (EI CONFERENCE)
会议论文
OAI收割
ICO20: Optical Devices and Instruments, August 21, 2005 - August 26, 2005, Changchun, China
作者:
Wang X.
;
Wang X.
;
Wang X.
;
Zheng X.
;
Gao J.
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2013/03/25
With reactive low voltage ion plating technique
ITO (indium oxide doped with tin) films were deposited on glass substrates by using ITO pellet with a composition of 90 wt.% In2O3 and 10 wt.% SnO2 without extra heating. The post annealing process was done in vacuum with different annealing temperature at 100
200
300 and 400C for 2 hours
respectively. The effects of vacuum annealing on structural
optical and electrical properties of the ITO film deposited by RLVIP were studied in detail. The results showed that the crystalline of the film was improved with the higher temperature. The increase of the annealing temperature improved the infrared reflectivity from 30% to 80% over 8-14m of the infrared atmosphere window
and a simultaneous variation in the optical transmission of the visible spectral region occurred. In addition
sheet resistance of ITO films had contrary changing trend with the IR reflectance
as well.
Structure and luminescence of gan films by sputtering post-annealing-reaction technique
期刊论文
iSwitch采集
Diamond and related materials, 2003, 卷号: 12, 期号: 8, 页码: 1402-1405
作者:
Ma, HL
;
Yang, YG
;
Xue, CS
;
Zhuang, HZ
;
Hao, XT
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2019/05/12
Gan films
Quartz substrates
Photoluminescence
Sputtering post-annealing-reaction technique