中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
首页
机构
成果
学者
登录
注册
登陆
×
验证码:
换一张
忘记密码?
记住我
×
校外用户登录
CAS IR Grid
机构
半导体研究所 [8]
物理研究所 [3]
苏州纳米技术与纳米仿... [1]
上海应用物理研究所 [1]
近代物理研究所 [1]
采集方式
OAI收割 [11]
iSwitch采集 [3]
内容类型
期刊论文 [13]
会议论文 [1]
发表日期
2020 [1]
2016 [1]
2012 [1]
2005 [2]
2004 [1]
2003 [4]
更多
学科主题
半导体材料 [3]
光电子学 [1]
半导体物理 [1]
筛选
浏览/检索结果:
共14条,第1-10条
帮助
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
题名升序
题名降序
提交时间升序
提交时间降序
作者升序
作者降序
发表日期升序
发表日期降序
Investigations on Gilbert damping, Curie temperatures and thermoelectric properties in CoFeCrZ quaternary Heusler alloys
期刊论文
OAI收割
CURRENT APPLIED PHYSICS, 2020, 卷号: 20, 期号: 4, 页码: 593-603
作者:
Wei, Xiao-Ping
;
Gao, Peifeng
;
Zhang, Ya-Ling
  |  
收藏
  |  
浏览/下载:47/0
  |  
提交时间:2022/01/18
Quaternary heusler alloys
Gilbert damping parameters
Exchange interactions
Curie temperatures
Thermoelectric properties
Critical evaluation and thermodynamic optimization of the (U plus Bi), (U plus Si) and (U plus Sn) binary systems
期刊论文
OAI收割
JOURNAL OF CHEMICAL THERMODYNAMICS, 2016, 卷号: 92, 期号: -, 页码: 158—167
作者:
Wang, J
;
Wang, K
;
Ma, CH
;
Xie, LD
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2016/09/12
QUASI-CHEMICAL MODEL
AL-U
INTERMETALLIC COMPOUNDS
QUATERNARY SYSTEM
URANIUM
ALLOYS
TIN
SOFTWARE
CALPHAD
DESIGN
Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD)
期刊论文
OAI收割
Journal of Crystal Growth, 2012, 卷号: 348, 期号: 1, 页码: 25-30
作者:
S.M. Zhang(张书明)
;
Y.M. Fan(范亚明)
;
B.S. Zhang(张宝顺)
;
H. Yang(杨辉)
收藏
  |  
浏览/下载:33/0
  |  
提交时间:2013/01/22
Diffusion
Metalorganic chemical vapor deposition
Nitrides
Semiconducting quaternary alloys
Alloy compositional fluctuation in InAlGaN epitaxial films
期刊论文
OAI收割
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2005, 卷号: 80, 期号: 3, 页码: 649
Li, DB
;
Dong, X
;
Huang, J
;
Liu, X
;
Xu, Z
;
Zhang, Z
;
Wang, Z
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2013/09/17
MULTIPLE-QUANTUM WELLS
ALINGAN/GAN HETEROSTRUCTURES
OPTICAL-PROPERTIES
QUATERNARY ALLOYS
MOLECULAR-BEAM
GROWTH
INXALYGA1-X-YN
Pseudoelasticity of Co(5)Ni(22)Ga(28): Fe, single crystal at room temperature and high temperature of 100 degrees C
期刊论文
OAI收割
ACTA PHYSICA SINICA, 2005, 卷号: 54, 期号: 10, 页码: 4884
Dai, XF
;
Liu, GD
;
Liu, ZH
;
Wu, GH
;
Chen, JL
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2013/09/24
SHAPE-MEMORY ALLOYS
QUATERNARY HEUSLER ALLOY
CO-NI-GA
MARTENSITIC-TRANSFORMATION
NIMNFEGA
BEHAVIOR
Structural and optical properties of quaternary alingan epilayers grown by mocvd with various tmga flows
期刊论文
iSwitch采集
Journal of crystal growth, 2004, 卷号: 260, 期号: 3-4, 页码: 388-393
作者:
Liu, JP
;
Zhang, BS
;
Wu, M
;
Li, DB
;
Zhang, JC
收藏
  |  
浏览/下载:33/0
  |  
提交时间:2019/05/12
Triple-axis x-ray diffraction
Atomic force microscopy
Metalorganic chemical vapor deposition
Alingan quaternary alloys
Structural and optical properties of InAlGaN films grown directly on low-temperature buffer layer with (0001)sapphire substrate
期刊论文
OAI收割
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 249, 期号: 1-2, 页码: 72
Li, DB
;
Dong, X
;
Huang, JS
;
Liu, XL
;
Xu, ZY
;
Wang, XH
;
Zhang, Z
;
Wang, ZG
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2013/09/24
INXALYGA1-X-YN QUATERNARY ALLOYS
TIME-RESOLVED PHOTOLUMINESCENCE
MULTIPLE-QUANTUM WELLS
ALINGAN/GAN HETEROSTRUCTURES
GAN
DECAY
LUMINESCENCE
SAPPHIRE
DEVICES
SILICON
Growth and photoluminescence of InAlGaN films
会议论文
OAI收割
5th international conference on nitride semiconductors (icns-5), nara, japan, may 25-30, 2003
作者:
Li DB
收藏
  |  
浏览/下载:15/2
  |  
提交时间:2010/10/29
MULTIPLE-QUANTUM WELLS
QUATERNARY ALLOYS
OPTICAL-PROPERTIES
Time-resolved photoluminescence studies of AlInGaN alloys
期刊论文
OAI收割
chinese physics letters, 2003, 卷号: 20, 期号: 7, 页码: 1148-1150
作者:
Li DB
收藏
  |  
浏览/下载:41/0
  |  
提交时间:2010/08/12
INXALYGA1-X-YN QUATERNARY ALLOYS
LUMINESCENCE
Structural and optical properties of InAlGaN films grown directly on low-temperature buffer layer with (0001)sapphire substrate
期刊论文
OAI收割
journal of crystal growth, 2003, 卷号: 249, 期号: 1-2, 页码: 72-77
作者:
Li DB
收藏
  |  
浏览/下载:71/0
  |  
提交时间:2010/08/12
nanostructures
stretched exponential
time-resolved photolummescence
metalorganic vapor phase epitaxy
nitrides
InAlGaN
INXALYGA1-X-YN QUATERNARY ALLOYS
TIME-RESOLVED PHOTOLUMINESCENCE
MULTIPLE-QUANTUM WELLS
ALINGAN/GAN HETEROSTRUCTURES
GAN
DECAY
LUMINESCENCE
SAPPHIRE
DEVICES
SILICON