机构

• 半导体研究所 [7]
• 金属研究所 [4]
• 理论物理研究所 [4]
• 物理研究所 [2]
• 上海微系统与信息技术... [2]
• 长春应用化学研究所 [2]
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采集方式

• OAI收割 [24]
• iSwitch采集 [3]

内容类型

• 期刊论文 [27]

发表日期

• 2023 [1]
• 2019 [1]
• 2018 [1]
• 2017 [1]
• 2012 [1]
• 2011 [1]
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学科主题

• Physics [4]
• Optics [2]
• 半导体材料 [2]
• 半导体物理 [2]
• Physics, C... [1]
• 光电子学 [1]
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筛选

浏览/检索结果: 共27条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 The effect of loading modes on the strain-dependent energy gap of CdTe quantum dots: A first-principles study 期刊论文  OAI收割 COMPUTATIONAL MATERIALS SCIENCE, 2023, 卷号: 217, 页码: 7 作者:  Wang, Jundiao;  Shi, Ronghao;  Xiao, Pan;  Xiao P(肖攀);  Shi RH(史荣豪)   |  收藏  |  浏览/下载：24/0  |  提交时间：2023/02/20 CdTe quantum dots  First-principles calculations  Strain-dependent energy gap  Loading modes   Point defects: key issues for -oxides wide-bandgap semiconductors development 期刊论文  OAI收割 Wuli Xuebao/Acta Physica Sinica, 2019, 卷号: 68, 期号: 16 作者:  X.-H.Xie;  B.-H.Li;  Z.-Z.Zhang;  L.Liu;  K.-W.Liu   |  收藏  |  浏览/下载：45/0  |  提交时间：2020/08/24 Wide band gap semiconductors,Arc lamps,Beryllia,Binding energy,Doping (additives),Electroluminescence,Energy gap,II-VI semiconductors,Ionization of gases,Ionization potential,Magnesia,Magnetic semiconductors,Point defects,Semiconductor doping,Semiconductor lasers,Semiconductor quantum wells,Ultraviolet lasers,Zinc oxide   Novel luminescent properties and thermal stability of non-rare-earth Ca-alpha-sialon:Mn2+ phosphor 期刊论文  OAI收割 JOURNAL OF LUMINESCENCE, 2018, 卷号: 202, 页码: 514, 522 作者:  Ni, Jia;  Liu, Qian;  Wan, Jieqiong;  Liu, Guanghui;  Zhou, Zhenzhen   |  收藏  |  浏览/下载：40/0  |  提交时间：2018/12/28 Ca-alpha-sialon:Mn2+ phosphor  Band gap energy  Spectroscopy property  Thermal stability  Internal quantum efficiency   First principle study of electronic structures and optical absorption properties of O and S doped graphite phase carbon nitride (g-C3N4)(6) quantum dots 期刊论文  OAI收割 ACTA PHYSICA SINICA, 2017, 卷号: 66, 页码: 11 作者:  Zhai Shun-Cheng;  Guo Ping;  Zheng Ji-Ming;  Zhao Pu-Ju;  Suo Bing-Bing   |  收藏  |  浏览/下载：37/0  |  提交时间：2018/05/31 (g-C3N4)(6) quantum dots  energy gap  doped  optical absorption   Measurements of I-V characteristics in InAs/InP quantum dot laser diode 期刊论文  OAI收割 JOURNAL OF MODERN OPTICS, 2012, 卷号: 59, 期号: 19, 页码: 1695-1699 Li, SG; Gong, Q; Cao, CF; Wang, XZ; Yue, L; Wang, HL; Wang, Y 收藏  |  浏览/下载：23/0  |  提交时间：2013/04/17 quantum dot laser diode  current-voltage characteristics  energy band gap   Enhanced absorption in nanocrystalline silicon thin film solar cells using surface plasmon polaritons 期刊论文  OAI收割 icmree2011 - proceedings 2011 international conference on materials for renewable energy and environment, 2011, 卷号: 1, 页码: 242-246 Hao, Huiying; Li, Weimin; Xing, Jie; Fan, Zhenjun, 收藏  |  浏览/下载：18/0  |  提交时间：2012/06/14 Absorption  Electromagnetic wave polarization  Energy gap  Gold  Light absorption  Nanostructured materials  Optical properties  Particle optics  Phonons  Photons  Plasmons  Quantum theory  Scattering  Semiconducting silicon compounds  Silicon solar cells  Silver  Solar absorbers  Solar energy  Surface plasmon resonance  Surfaces  Thin films   The optical gain and radiative current density of GaInNAs/GaAs/AlGaAs separate confinement heterostructure quantum well lasers 期刊论文  OAI收割 Journal of Applied Physics, 2010, 卷号: 107, 期号: 1 S. D. Wu, Y. G. Cao, S. Tomic and F. Ishikawa 收藏  |  浏览/下载：21/0  |  提交时间：2012/11/02 aluminium compounds  energy gap  gallium arsenide  gallium compounds  III-V semiconductors  indium compounds  quantum well lasers  valence  bands  waveguide lasers  threshold-current-density  band parameters  tensile strain  temperature  subbands  semiconductors  performance  spectra  leakage  diode   Effects of GaN Capping on the Structural and the Optical Properties of InN Nanostructures Grown by Using MOCVD 期刊论文  OAI收割 journal of the korean physical society, 2010, 卷号: 57, 期号: 1, 页码: 128-132 Sun YP (Sun Yuanping); Sun Y (Sun Yuanping); Cho YH (Cho Yong-Hoon); Wang H (Wang Hui); Wang LL (Wang Lili); Zhang SM (Zhang Shuming); Yang H (Yang Hui) 收藏  |  浏览/下载：523/2  |  提交时间：2010/08/17 InN  Burstein-Moss effect  Quantum confinement effect  Activation energy  FUNDAMENTAL-BAND GAP  WELL STRUCTURES  EMISSION  SINGLE   Room temperature photoluminescence of tensile-strained ge/si0.13ge0.87 quantum wells grown on silicon-based germanium virtual substrate 期刊论文  iSwitch采集 Applied physics letters, 2009, 卷号: 94, 期号: 14, 页码: 3 作者:  Chen, Yanghua;  Li, Cheng;  Zhou, Zhiwen;  Lai, Hongkai;  Chen, Songyan 收藏  |  浏览/下载：64/0  |  提交时间：2019/05/12 Chemical vapour deposition  Elemental semiconductors  Energy gap  Germanium  Ge-si alloys  Photoluminescence  Semiconductor epitaxial layers  Semiconductor quantum wells  Silicon  Tensile strength   Band gap engineering of gan nanowires by surface functionalization 期刊论文  iSwitch采集 Applied physics letters, 2009, 卷号: 94, 期号: 7, 页码: 3 作者:  Fang, D. Q.;  Rosa, A. L.;  Frauenheim, Th.;  Zhang, R. Q. 收藏  |  浏览/下载：34/0  |  提交时间：2019/05/10 Adsorption  Density functional theory  Energy gap  Gallium compounds  Iii-v semiconductors  Nanowires  Passivation  Semiconductor quantum wires  Surface states  Wide band gap semiconductors