机构

• 半导体研究所 [4]
• 金属研究所 [3]
• 苏州纳米技术与纳米仿... [1]
• 上海应用物理研究所 [1]
• 高能物理研究所 [1]

采集方式

• OAI收割 [10]

内容类型

• 期刊论文 [8]
• 会议论文 [2]

发表日期

• 2024 [2]
• 2014 [2]
• 2013 [1]
• 2006 [1]
• 2002 [1]
• 2000 [2]
• 更多

学科主题

• 半导体材料 [3]
• Engineerin... [1]
• 半导体物理 [1]

筛选

浏览/检索结果: 共10条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择作者升序作者降序发表日期升序发表日期降序题名升序题名降序提交时间升序提交时间降序 Quantitative Characterization of Beta Fleck Segregation in a Ti-17 Alloy Ingot Produced by Vacuum Arc Remelting Without Electromagnetic Stirring 期刊论文  OAI收割 METALS AND MATERIALS INTERNATIONAL, 2024, 页码: 13 作者:  Yin, Xuchen;  Liu, Jianrong;  Wang, Qingjiang;  Li, Wenyuan;  Deng, Hao   |  收藏  |  浏览/下载：1/0  |  提交时间：2025/04/27 Beta flecks  Segregation defects  Titanium alloy ingot  Vacuum arc remelting   Characterization of beta flecks and local solute segregation in Ti-17 alloy ingots produced by vacuum arc remelting 期刊论文  OAI收割 MATERIALS SCIENCE AND TECHNOLOGY, 2024, 页码: 10 作者:  Yin, Xuchen;  Liu, Jianrong;  Wang, Qingjiang;  Li, Wenyuan;  Deng, Hao   |  收藏  |  浏览/下载：1/0  |  提交时间：2025/04/27 beta flecks  melt defects  titanium alloy ingot  vacuum arc remelting  local solute segregation   First-principles study of the effect of phosphorus on nickel grain boundary 期刊论文  OAI收割 JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 115, 期号: 4 Liu, WG; Ren, CL; Han, H; Tan, J; Zou, Y; Zhou, XT; Huai, P; Xu, HJ 收藏  |  浏览/下载：37/0  |  提交时间：2015/03/13 INDUCED EMBRITTLEMENT  SOLUTE SEGREGATION  POINT-DEFECTS  ALLOY 718  SUPERALLOY  EXCHANGE  METALS  BORON   Effect of Cu on the boron segregation at grain boundaries and vacancy-type defects in ultra-low carbon micro-alloy steels 期刊论文  OAI收割 SCIENCE CHINA-TECHNOLOGICAL SCIENCES, 2014, 卷号: 57, 期号: 6, 页码: 1135-1141 作者:  Yang, RJ;  Wu, P;  Li, XL;  Zhang, SP;  Chen, S 收藏  |  浏览/下载：60/0  |  提交时间：2016/04/08 particle tracking autoradiography (PTA) technique  boron segregation at grain boundaries  positron annihilation lifetime (PAL) technique  vacancy-type defects  ultra-low carbon micro-alloy steels   Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diode structures during the epitaxial growth 期刊论文  OAI收割 APPLIED PHYSICS LETTERS, 2013, 卷号: 103, 期号: 15 作者:  Yang, H(杨辉);  Li, DY(李德尧);  Zhang, SM(张书明);  Wang, HB(王怀兵);  Liu, JP（刘建平） 收藏  |  浏览/下载：41/0  |  提交时间：2014/01/15 C-PLANE GAN  HYDROGEN TREATMENT  INDIUM SEGREGATION  SUBSTRATE  DEFECTS   Mechanical properties of structural materials from first-principles 期刊论文  OAI收割 Current Opinion in Solid State & Materials Science, 2006, 卷号: 10, 期号: 1, 页码: 19-25 Q. M. Hu; R. Yang 收藏  |  浏览/下载：51/0  |  提交时间：2012/04/13 first-principles methods  mechanical properties  ideal strength  elastic  modulus  lattice defects  density-functional-theory  grain-boundary cohesion  ab-initio  calculation  intermetallic compounds  disordered alloys  ideal strength  1st principles  segregation  embrittlement  iron   Space-grown SI-GaAs and its application 会议论文  OAI收割 12th international semicoducting and insulating materials conference (simc-xii2002), smolenice, slovakia, jun 30-jul 05, 2002 Chen NF; Zhong XG; Zhang M; Lin LY 收藏  |  浏览/下载：56/0  |  提交时间：2010/10/29 SEMIINSULATING GALLIUM-ARSENIDE  FLOATING-ZONE GROWTH  CRYSTAL-GROWTH  ZERO GRAVITY  MICROGRAVITY  SEGREGATION  STOICHIOMETRY  SILICON  DEFECTS  INSB   Semi-insulating GaAs grown in outer space 期刊论文  OAI收割 materials science and engineering b-solid state materials for advanced technology, 2000, 卷号: 75, 期号: 2-3, 页码: 134-138 Chen NF; Zhong XR; Lin LY; Xie X; Zhang M 收藏  |  浏览/下载：94/0  |  提交时间：2010/08/12 GaAs  outer space  microgravity  integrated circuit  SEMIINSULATING GALLIUM-ARSENIDE  LEC-GAAS  DEFECTS  STOICHIOMETRY  SEGREGATION  CARBON  BORON   Semi-insulating GaAs grown in outer space 会议论文  OAI收割 iumrs international conference of advanced materials, beijing, peoples r china, jun 13-18, 1999 Chen NF; Zhong XR; Lin LY; Xie X; Zhang M 收藏  |  浏览/下载：64/0  |  提交时间：2010/11/15 GaAs  outer space  microgravity  integrated circuit  SEMIINSULATING GALLIUM-ARSENIDE  LEC-GAAS  DEFECTS  STOICHIOMETRY  SEGREGATION  CARBON  BORON   Relationship between deep-level centers and stoichiometry in semi-insulating gallium arsenide 期刊论文  OAI收割 journal of applied physics, 1998, 卷号: 84, 期号: 10, 页码: 5826-5827 Lin LY; Chen NF; Zhong XR; He HJ; Li CJ 收藏  |  浏览/下载：53/0  |  提交时间：2010/08/12 SEMIINSULATING GAAS  LEC-GAAS  DEFECTS  SEGREGATION  CARBON  BORON