机构

• 半导体研究所 [9]
• 西安光学精密机械研究... [6]
• 长春光学精密机械与物... [4]
• 上海光学精密机械研究... [1]

采集方式

• OAI收割 [18]
• iSwitch采集 [2]

内容类型

• 期刊论文 [12]
• 会议论文 [8]

发表日期

• 2024 [2]
• 2022 [1]
• 2021 [2]
• 2019 [1]
• 2013 [1]
• 2011 [1]
• 更多

学科主题

• 光电子学 [5]
• 半导体器件 [2]

筛选

浏览/检索结果: 共20条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Narrow versus Broad Waveguide Laser Diodes: A Comparative Analysis of Self-Heating and Reliability 会议论文  OAI收割 San Francisco, CA, United states, 2024-01-28 作者:  Demir, Abdullah;  Sünnetçioğlu, Ali Kaan;  Ebadi, Kaveh;  Liu, Yuxian;  Tang, Song   |  收藏  |  浏览/下载：8/0  |  提交时间：2024/07/26 Semiconductor laser  laser diode  high power  reliability  catastrophic optical damage   Efficient Power Scaling of Broad-Area Laser Diodes from 915 to 1064 nm 会议论文  OAI收割 San Francisco, CA, United states, 2024-01-28 作者:  Yang, Guowen;  Liu, Yuxian;  Zhao, Yuliang;  Lan, Yu;  Zhao, Yongming   |  收藏  |  浏览/下载：27/0  |  提交时间：2024/07/26 Semiconductor laser  laser diode  high power  high efficiency   48 W Continuous-Wave Output From a High-Efficiency Single Emitter Laser Diode at 915 nm 期刊论文  OAI收割 IEEE PHOTONICS TECHNOLOGY LETTERS, 2022, 卷号: 34, 期号: 22, 页码: 1218-1221 作者:  Liu, Yuxian;  Yang, Guowen;  Zhao, Yongming;  Tang, Song;  Lan, Yu   |  收藏  |  浏览/下载：43/0  |  提交时间：2022/10/25 Semiconductor laser  laser diode  high power  high efficiency  915 nm   808 nm broad-area laser diodes designed for high efficiency at high-temperature operation 期刊论文  OAI收割 SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2021, 卷号: 36, 期号: 10 作者:  Lan, Yu;  Yang, Guowen;  Liu, Yuxian;  Zhao, Yuliang;  Wang, Zhenfu   |  收藏  |  浏览/下载：51/0  |  提交时间：2021/10/08 semiconductor laser  laser diode  high power  high efficiency  808 nm   High-power operation and lateral divergence angle reduction of broad-area laser diodes at 976 nm 期刊论文  OAI收割 Optics and Laser Technology, 2021, 卷号: 141 作者:  Liu, Yuxian;  Yang, Guowen;  Wang, Zhenfu;  Li, Te;  Tang, Song   |  收藏  |  浏览/下载：54/0  |  提交时间：2021/05/08 Semiconductor laser  Diode laser  High power  High efficiency  Low divergence angle  High brightness  976 nm   Design of a multimode interference waveguide semiconductor laser combining gain coupled distributed feedback grating 期刊论文  OAI收割 Acta Physica Sinica, 2019, 卷号: 68, 期号: 16, 页码: 10 作者:  C.Qiu;  Y.Y.Chen   |  收藏  |  浏览/下载：21/0  |  提交时间：2020/08/24 distributed feedback grating,active multimode interference waveguide,edgeemitting semiconductor laser diode,wavelength tuning range,dfb,lidar,Physics   Structural amelioration of 920 nm optically pumped semiconductor vertical external-cavity surface emitting laser (OPS-VECSEL) (EI CONFERENCE) 会议论文  OAI收割 2nd International Conference on Energy, Environment and Sustainable Development, EESD 2012, October 12, 2012 - October 14, 2012, Jilin, China 作者:  Liu Y.;  Liu Y.;  Wang L.;  Wang L.;  Wang L. 收藏  |  浏览/下载：20/0  |  提交时间：2013/03/25 920 nm optically pumped semiconductor vertical external-cavity surface emitting laser (OPS-VECSEL) has an important application in laser display. We constructed and optimized a 920 nm OPS-VECSEL with active region of In0.09Ga0.91As quantum well (QW) system pumped by 808 nm laser diode module. By the finite element method  self-consistent solutions of the semiconductor electronic and optical equations are realized to calculate the characteristics parameters of OPS-VECSEL. The performances of device especially the mode  the threshold and the optical-optical translation efficiency were analyzed by dealing with different number of QWs (1  2 and 3) in one period  QW depth  barrier width  the component and dimension of the non-absorption layer. We chose an improved structure of them. On this basis  we ameliorated the number of QW periods and the simulation showed that in order to obtain high performance device  the choice of the number of QW periods must be cautious. (2013) Trans Tech Publications  Switzerland.   Energy transition between Yb3+-Tm3+-Gd3+ in Gd3+, Yb3+ and Tm3+ Co-doped fluoride nanocrystals (EI CONFERENCE) 会议论文  OAI收割 17th International Conference on Dynamical Processes in Excited States of Solids, DPC'10, June 20, 2010 - June 25, 2010, Argonne, IL, United states 作者:  Zhang J.;  Zhang J.;  Zhang J. 收藏  |  浏览/下载：23/0  |  提交时间：2013/03/25 YF3: 20%Gd3+  20%Yb3+  0.5%Tm3+ nanocrystal has been synthesized by a hydrothermal method. The upconversion (UC) emission and energy transfer progresses between Gd3+-Yb 3+-Tm3+ under a 980-nm continuous wave semiconductor laser diode excitation have been explored. The experimental results show that the violet and ultraviolet (UV) enhancement with Tm3+ upconversion emission occurs in the nanocrystal  and in the same time the UC emissions of Gd3+ from 6D9/2  6IJ  6P5/2  and 6P7/2 states to the ground state 8S7/2 are obtained  too. The dynamic analysis implies that  under 980-nm excitation  the nanocrystal dimension plays a key role in the efficient energy transfer processes between Gd3+-Yb 3+-Tm3tt based on the energy matching conditions. 2011 Published by Elsevier B.V.   Frequency-Pushing Effect in Single-Mode Diode Laser Subject to External Dual-Beam Injection 期刊论文  OAI收割 ieee journal of quantum electronics, 2010, 卷号: 46, 期号: 5, 页码: 796-803 作者:  Wang LX;  Ke JH 收藏  |  浏览/下载：85/6  |  提交时间：2011/07/05 Dual lasers  four-wave mixing  frequency-pushing effect  injection-locked diode laser  optical frequency conversion  SMALL-SIGNAL ANALYSIS  CAVITY SEMICONDUCTOR-LASERS  OPTICAL-INJECTION  NONLINEAR DYNAMICS  LIGHT INJECTION  CONVERSION  LOCKING  MODULATION  BANDWIDTH  FEEDBACK   High power diode laser with beam coupling (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China 作者:  Wang L.;  Liu Y.;  Wang L.;  Liu Y.;  Liu Y. 收藏  |  浏览/下载：61/0  |  提交时间：2013/03/25 As the increasing applications of the semiconductor lasers in the laser processing  the single 2-D stack optic-power density has not satisfied the actual requirements. It demands to couple several diode laser stack beams to one to improve the brightness  and it becomes the central issue to adopt the appropriate beam coupling technology which would offer high quality and high efficiency. In this paper  it mainly introduces the beam shaping and the technology of spatial coupling  polarization coupling  and wavelength coupling. The coupling key elements are presented and indicated. Finally  the development of the diode laser on beam coupling in our country fell behind through analyzing the statement of the world. Our lab is studying on polarization coupling and wavelength coupling. We gain some results by phase  which the polarization coupling efficiency can achieve 90% for two LD stacks with seven bars whose luminous wavelength is 975nm and980nm.By two 808nm diode laser coupling  the efficiency of 60% can be achieved after focusing to the beam size of 22mm2. 2008 SPIE.