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	Large aperture low threshold current 980nmVCSELs fabricated with pulsed anodic oxidation (EI CONFERENCE) 会议论文 OAI收割 Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China Jinjiang C.; Yongqiang N.; Te L.; Guangyu L.; Yan Z.; Biao P.; Yanfang S.; Lijun W. 收藏 \| 浏览/下载：27/0 \| 提交时间：2013/03/25 Pulsed anodic oxidation technique a new way of forming current blocking layers was successfully used in ridge-waveguide QW laser fabrication. We apply this method in 980nm VCSELs fabrication to form a high-quality native oxide current blocking layer which simplify the device process. A significant reduction of threshold current and a distinguished device performance are achieved. The 500m-diameter device has a current threshold as low as 0.48W. The maximum CW operation output power at room temperature is 1.48W. The lateral divergence angle //and vertical divergence angle are as low as 15.3 and 13.8 without side-lobes at a current of 6A.
	High performance 1689-nm quantum well diode lasers 期刊论文 OAI收割 chinese optics letters, 2007, 卷号: 5, 期号: 10, 页码: 585-587 Duan, YP; Lin, T; Wang, CL; Chong, F; Ma, XY 收藏 \| 浏览/下载：64/6 \| 提交时间：2010/03/08 MOLECULAR-BEAM EPITAXY MU-M ROOM-TEMPERATURE HIGH-POWER OPERATION CW
	Optimal design of the active regions for InGaAsSb/AlGaAsSb long wavelength multi quantum well lasers 期刊论文 OAI收割 ACTA PHYSICA SINICA, 2004, 卷号: 53, 期号: 1, 页码: 218-225 Xu, GY; Li, AZ 收藏 \| 浏览/下载：23/0 \| 提交时间：2012/03/24 TEMPERATURE CW-OPERATION QW DIODE-LASERS MU-M BAND-STRUCTURE OPTICAL GAIN ALGAASSB GASB ALLOYS
	Optical gain of InGaAsSb/AlGaAsSb type-I long wavelength quantum-well lasers 期刊论文 OAI收割 SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2003, 卷号: 18, 期号: 9, 页码: 827-833 Xu, GY; Li, AZ 收藏 \| 浏览/下载：16/0 \| 提交时间：2012/03/24 TEMPERATURE CW-OPERATION QW DIODE-LASERS MU-M BAND-STRUCTURE ALGAASSB GASB ALLOYS