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	Study of a new type of radiant tube based on the traditional m-type structure 期刊论文 iSwitch采集 Applied thermal engineering, 2019, 卷号: 150, 页码: 849-857 作者: Xu, Qian; Feng, Junxiao; Zhou, Jingzhi; Liu, Lin; Zang, Yong 收藏 \| 浏览/下载：677/0 \| 提交时间：2019/05/08 Radiant tube Gas circulation Temperature uniformity Thermal efficiency Combustion characteristic
	The effects of micro-structured surfaces on multi-nozzle spray cooling 期刊论文 OAI收割 APPLIED THERMAL ENGINEERING, 2014, 卷号: 62, 期号: 2, 页码: 613-621 作者: Hou, Yan; Tao, Yujia; Huai, Xiulan 收藏 \| 浏览/下载：33/0 \| 提交时间：2015/12/17 Micro-structured surface Multi-nozzle spray cooling Heat transfer Temperature uniformity
	Temperature gradients effect on surface test with high precise interferometer (EI CONFERENCE) 会议论文 OAI收割 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optical Test and Measurement Technology and Equipment, April 26, 2010 - April 29, 2010, Dalian, China 作者: Gu Y.-Q.; Yang H.-J.; Sui Y.-X.; Zhang J.; Zhang J. 收藏 \| 浏览/下载：38/0 \| 提交时间：2013/03/25 In high precise surface testing temperature stability and uniformity are of paramount importance to the high accuracy of test results. Micro-temperature variation and temperature gradients not only cause the change of the air refractive index and lead to the optical path variation in interferometer cavity but also result in deformation of the tested surface itself which always brings about errors to the test results. Temperature effects on the interferometer cavity and the tested surface are analyzed from the axial and radial directions in this letter. Temperature model of the interferometer cavity and the tested lens are established and quantitative calculations and diagram of test results versus temperature and lens dimension are provided. It shows that temperature gradients effect increase with the length of the interferometer and the dimension of the tested lens. The interferometer cavity is mainly affected by radial temperature gradients while the tested lens is mainly affected by the axial temperature gradients. 2010 Copyright SPIE - The International Society for Optical Engineering.
	Fabrication of polysilicon thin film on glass with low-temperature UV-assisted crystallization (EI CONFERENCE) 会议论文 OAI收割 ICO20: Display Devices and Systems, August 21, 2005 - August 26, 2005, Changchun, China Huang J. Y.; Ling Z. H.; Jing H.; Fu G. Z.; Zhao Y. H. 收藏 \| 浏览/下载：46/0 \| 提交时间：2013/03/25 The amorphous silicon (a-Si) film was crystallized on glass by a simple method employed ultraviolet at temperatures as low as 400C. The employ of ultraviolet enhanced the crystallization of amorphous silicon. This method is able to uniformly crystallized large-area amorphous silicon films. The polysilicon films crystallized by this way are suitable for the fabrication of thin film transistors on ordinary glass. Crystallization process is performed in a furnace. Amorphous silicon sample is placed on a hot plate and irradiated by a bank of ultraviolet lamps through a diffuser plate to improve the uniformity of light that irradiates the sample. Raman microscopy is used for analyzing the qualities of UV-assisted crystallized silicon films. By measuring the Raman spectra the effects of anneal temperature and process time on the crystallizing behavior crystallinity and grain size of the processed films were obtained. There has a threshold temperature for crystallization of amorphous silicon film in the presence of ultraviolet irradiation with certain intensity i.e. by ultraviolet irradiation with certain intensity only when the temperature is up to the threshold temperature the crystallization can be triggered. The threshold temperature is 400C when the intensity of ultraviolet irradiation is 1mW/cm2. Above threshold temperature the increase of anneal temperature increased the rate of crystallization. Crystallinity and grain size extracted from Raman spectra of samples increase with the extending of process time at certain temperature. Crystallization of amorphous silicon film with thickness of 50nm completed within 6 hours at 400C irradiated by ultraviolet with intensity of 2mW/cm2.
	Photoluminescence assessment of undoped semi-insulating InP wafers obtained by annealing in iron phosphide vapour 期刊论文 OAI收割 semiconductor science and technology, 2002, 卷号: 17, 期号: 6, 页码: 570-574 Dong HW; Zhao YW; Lu HP; Jiao JH; Zhao JQ; Lin LY 收藏 \| 浏览/下载：70/0 \| 提交时间：2010/08/12 FE-DOPED INP SEMIINSULATING INP ELECTRICAL-PROPERTIES ROOM-TEMPERATURE UNIFORMITY PRESSURE INGOT