中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
机构
采集方式
内容类型
发表日期
学科主题
筛选

浏览/检索结果: 共9条,第1-9条 帮助

条数/页: 排序方式:
Thickness-dependent fracture characteristics of ceramic coatings bonded on the alloy substrates 期刊论文  OAI收割
SURFACE & COATINGS TECHNOLOGY, 2014, 卷号: 258, 页码: 1039-1047
作者:  
Wei YG(魏悦广);  Liang, LH (reprint author), Chinese Acad Sci, Inst Mech, LNM, Beijing 100190, Peoples R China.;  Li XN;  Liang LH(梁立红);  Xie JJ(谢季佳)
  |  收藏  |  浏览/下载:77/0  |  提交时间:2015/01/23
Effect of design parameters on the reduction of top piston ring friction (EI CONFERENCE) 会议论文  OAI收割
2nd International Conference on Computer-Aided Design, Manufacturing, Modeling and Simulation, CDMMS 2012, September 21, 2012 - September 23, 2012, Chongqing, China
作者:  
Wang P.
收藏  |  浏览/下载:138/0  |  提交时间:2013/03/25
Strength and interface failure mechanism of adhesive joints 期刊论文  OAI收割
INTERNATIONAL JOURNAL OF ADHESION AND ADHESIVES, 2012, 卷号: 34, 期号: 4, 页码: 80-92
作者:  
Xu W(许巍);  Wei YG(魏悦广);  Xu, W
收藏  |  浏览/下载:33/0  |  提交时间:2013/01/18
Effect of content on microstructure and dielectric performance of pi/al2o3 hybrid films 期刊论文  iSwitch采集
Nanoscience and nanotechnology letters, 2011, 卷号: 3, 期号: 2, 页码: 226-229
作者:  
Liu, Xiaoxu;  Yin, Jinghua;  Chen, Minghua;  Bu, Wenbin;  Cheng, Weidong
收藏  |  浏览/下载:38/0  |  提交时间:2019/04/23
The method of separation of magnetic field step by step for inversion of magnetic stratigraphic interfaces 期刊论文  OAI收割
CHINESE JOURNAL OF GEOPHYSICS-CHINESE EDITION, 2007, 卷号: 50, 期号: 2, 页码: 611-618
作者:  
Zhao Bai-Min;  Hao Tian-Yao;  Xu Ya;  Zhou Li-Hong;  Gao Jia-Rui
  |  收藏  |  浏览/下载:13/0  |  提交时间:2018/09/26
The method of separation of magnetic field step by step for inversion of magnetic stratigraphic interfaces 期刊论文  OAI收割
CHINESE JOURNAL OF GEOPHYSICS-CHINESE EDITION, 2007, 卷号: 50, 期号: 2, 页码: 611-618
作者:  
Zhao Bai-Min;  Hao Tian-Yao;  Xu Ya;  Zhou Li-Hong;  Gao Jia-Rui
  |  收藏  |  浏览/下载:15/0  |  提交时间:2018/09/26
Effect of interface on luminescence properties in ZnO/MgZnO heterostructures (EI CONFERENCE) 会议论文  OAI收割
Wei Z. P.; Lu Y. M.; Shen D. Z.; Wu C. X.; Zhang Z. Z.; Zhao D. X.; Zhang J. Y.; Fan X. W.
收藏  |  浏览/下载:30/0  |  提交时间:2013/03/25
A set of ZnO/MgZnO heterostructures with well widths  Lw  varying from 2 to 20 nm has been grown by plasma-assisted molecular-beam epitaxy (P-MBE). We present a room-temperature (RT) study of the well-width-dependent photoluminescence (PL) spectra and carrier lifetimes in ZnO/MgZnO heterostructures. Bi-exponential process is seen at RT time-decay curves of the luminescence from the well layers. The fast process is from the recombination of the free exciton  while the slow process is attributing to the recombination of the localized exciton in the interface of ZnO and MgZnO. It is also confirmed from the PL peak shift of time-resolved PL spectra. With decreasing the well thickness  the fast process gradually increases and dominantly contributes to the PL spectrum due to the interface improvement. 2006 Elsevier B.V. All rights reserved.  
Characterization of ZnO/Mg0.12Zn0.88O heterostructure grown by plasma-assisted molecular beam epitaxy (EI CONFERENCE) 会议论文  OAI收割
13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004, 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004
Lu Y. M.; Wu C. X.; Wei Z. P.; Zhang Z. Z.; Zhao D. X.; Zhang J. Y.; Liu Y. C.; Shen D. Z.; Fan X. W.
收藏  |  浏览/下载:28/0  |  提交时间:2013/03/25
In this paper  Mg0.12Zn0.88O/ZnO heterostructures were fabricated on c-plane sapphire (Al2O3) substrates by plasma-assisted molecular beam epitaxy (P-MBE). The quality of the Mg 0.12Zn0.88O alloy thin film was characterized by X-ray diffraction (XRD) and reflection high-energy electron diffraction (RHEED). Optical properties of the Mg0.12Zn0.88O/ZnO heterostructure were studied by absorption and photoluminescence (PL) spectra. At room temperature (RT)  Mg0.12Zn0.88O/ZnO heterostructures show two absorption edges originating from ZnO and Mg 0.12Zn0.88O layers  respectively. In PL spectra  two ultraviolet emission bands related to the ZnO layer and the Mg 0.12Zn0.88O layer were observed. The emission band from Mg0.12Zn0.88O layer dominates at moderately lower temperature  and the luminescence of ZnO becomes gradually important with increasing temperature. This is suggested to exist as a potential barrier in the interface and to restrict the relaxation of the carriers from the Mg 0.12Zn0.88O layer to ZnO layer. As the thickness of ZnO layer decreases  the emission from the Mg0.12Zn0.88O layer becomes weaker and weaker. When the ZnO thickness is up to 2 nm  only the luminescence of the ZnO layer is observed at RT. The quenching of the emission corresponding to the MgZnO layer indicates the existence of a strong injection process in the samples with thinner ZnO layer. 2005 Elsevier B.V. All rights reserved.  
Determination of the average thickness of interface layer wrapped about SiO2 sols by saxs 期刊论文  OAI收割
ACTA PHYSICA SINICA, 2001, 卷号: 50, 期号: 6, 页码: 1128-1131
作者:  
Li, ZH;  Gong, YJ;  Wu, D;  Sun, YH;  Wang, J
收藏  |  浏览/下载:25/0  |  提交时间:2016/06/29