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浏览/检索结果: 共36条，第1-10条 帮助

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Influence of doubly-hydrogenated oxygen vacancy on the TID effect of MOS devices 期刊论文  OAI收割
FRONTIERS IN MATERIALS, 2022, 卷号: 9
作者:  Lu, Guangbao;  Liu, Jun
  |  收藏  |  浏览/下载：45/0  |  提交时间：2022/12/23
1/f Noise responses of Ultra-Thin Body and Buried oxide FD-SOI PMOSFETs under total ionizing dose irradiation 期刊论文  OAI收割
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2022, 卷号: 176, 期号: 11-12, 页码: 1202-1214
作者:  Zhang, RQ (Zhang, Ruiqin) [1] , [2] , [3];  Zheng, QW (Zheng, Qiwen) [1] , [2];  Lu, W (Lu, Wu) [1] , [2];  Cui, JW (Cui, Jiangwei) [1] , [2];  Li, YD (Li, Yudong) [1] , [2]
  |  收藏  |  浏览/下载：37/0  |  提交时间：2022/04/07
Experimental investigation on total-ionizing-dose radiation effects on the electrical properties of SOI-LIGBT 期刊论文  OAI收割
SOLID-STATE ELECTRONICS, 2021, 卷号: 175, 期号: 1, 页码: 1-7
作者:  Yang, GG (Yang, Guangan)[ 1 ];  Wu, WR (Wu, Wangran)[ 1 ];  Zhang, XY (Zhang, Xingyao)[ 2 ];  Tang, PY (Tang, Pengyu)[ 1 ];  Yang, J (Yang, Jing)[ 1 ]
  |  收藏  |  浏览/下载：42/0  |  提交时间：2021/03/15
Radiation Effects and Mechanisms on Switching Characteristics of Silicon Carbide Power MOSFETs 期刊论文  OAI收割
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2021, 卷号: 16, 期号: 9, 页码: 1423-1429
作者:  Feng, HN (Feng, Haonan) [1] , [2] , [3];  Yang, S (Yang, Sheng) [1] , [2] , [3];  Liang, XW (Liang, Xiaowen) [1] , [2] , [3];  Zhang, D (Zhang, Dan) [1] , [2] , [3];  Pu, XJ (Pu, Xiaojuan) [1] , [2] , [3]
  |  收藏  |  浏览/下载：43/0  |  提交时间：2022/03/24
Impact of TID on Within-Wafer Variability of Radiation-Hardened SOI Wafers 期刊论文  OAI收割
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 7, 页码: 1423-1429
作者:  Zheng, QW (Zheng, Qiwen) 1;  Cui, JW (Cui, Jiangwei) 1;  Yu, XF (Yu, Xuefeng) 1;  Li, YD (Li, Yudong) 1;  Lu, W (Lu, Wu) 1
  |  收藏  |  浏览/下载：42/0  |  提交时间：2021/08/06
Measurement and Evaluation of the Within-Wafer TID Response Variability on BOX Layer of SOI Technology 期刊论文  OAI收割
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 10, 页码: 2516-2523
作者:  Zheng, QW (Zheng, Qiwen) 1Cui, JW (Cui, Jiangwei) 1Yu, XF (Yu, Xuefeng) 1;  Li, YD (Li, Yudong) 1;  Lu, W (Lu, Wu) 1;  He, CF (He, Chengfa) 1;  Guo, Q (Guo, Qi) 1
  |  收藏  |  浏览/下载：40/0  |  提交时间：2021/12/06
Study of the influence of gamma irradiation on long-term reliability of SiC MOSFET 期刊论文  OAI收割
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2020, 卷号: 175, 期号: 5-6, 页码: 559-566
作者:  Liang, XW (Liang, Xiaowen)[ 1,2,3 ];  Cui, JW (Cui, Jiangwei)[ 1,2 ];  Zheng, QW (Zheng, Qiwen)[ 1,2 ];  Zhao, JH (Zhao, Jinghao)[ 1,2,3 ];  Yu, XF (Yu, Xuefeng)[ 1,2 ]
  |  收藏  |  浏览/下载：29/0  |  提交时间：2020/12/11
The influence of channel width on total ionizing dose responses of the 130 nm H-gate partially depleted SOI NMOSFETs 期刊论文  OAI收割
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2020, 卷号: 175, 期号: 5-6, 页码: 551-558
作者:  Xi, SX (Xi, Shan-Xue)[ 1,2,3 ];  Zheng, QW (Zheng, Qi-Wen)[ 1,2 ];  Lu, W (Lu, Wu)[ 1,2 ];  Cui, JW (Cui, Jiang-Wei)[ 1,2 ];  Wei, Y (Wei, Ying)[ 1,2 ]
  |  收藏  |  浏览/下载：25/0  |  提交时间：2020/07/06
TID Response of Bulk Si PMOS FinFETs: Bias, Fin Width, and Orientation Dependence 期刊论文  OAI收割
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2020, 卷号: 67, 期号: 7, 页码: 1320-1325
作者:  Ren, ZX (Ren, Zhexuan)[ 1 ];  An, X (An, Xia)[ 1 ];  Li, GS (Li, Gensong)[ 1 ];  Chen, G (Chen, Gong)[ 1 ];  Li, M (Li, Ming)[ 1 ]
  |  收藏  |  浏览/下载：55/0  |  提交时间：2020/09/09
Total Ionizing Dose Influence on the Single-Event Multiple-Cell Upsets in 65-nm 6-T SRAM 期刊论文  OAI收割
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 6, 页码: 892-898
作者:  Zheng, Qiwen;  Cui, Jiangwei;  Lu, Wu;  Guo, Hongxia;  Liu, Jie
  |  收藏  |  浏览/下载：88/0  |  提交时间：2019/11/10