中国科学院机构知识库网格系统: 检索

浏览/检索结果: 共5条，第1-5条

帮助

条数/页：排序方式：
	The Novel of n-p-n Type Transition in the ZnSe/Ge Heterojunction Nanowire: First Principles Study 期刊论文 OAI收割 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2019, 卷号: 19, 期号: 9, 页码: 5847-5853 作者: Huang Jiujun; Xing Huaizhong; Huang Yan(第三作者); Wang Chunrui; Chen Xiaoshuang \| 收藏 \| 浏览/下载：303/0 \| 提交时间：2019/11/13 n-p Type Transition ZnSe/Ge Nanowire Electronic Structure Property
	Photocatalytic activity enhanced by synergistic effects of nano-silver and ZnSe quantum dots co-loaded with bulk g-C3N4 for Ceftriaxone sodium degradation in aquatic environment 期刊论文 OAI收割 CHEMICAL ENGINEERING JOURNAL, 2018, 卷号: 353, 页码: 56-68 作者: Zhao, Yanyan; Liang, Xuhua; Shi, Huanxian; Wang, Yongbo; Ren, Yingkun \| 收藏 \| 浏览/下载：232/0 \| 提交时间：2018/11/05 Bulk G-c3n4 Znse Quantum Dot Nano Ag Photocatalytic Degradation Ceftriaxone Sodium
	Optimization of VI/II pressure ratio in ZnTe growth on GaAs(001) by molecular beam epitaxy 期刊论文 OAI收割 applied surface science, 2010, 卷号: 256, 期号: 22, 页码: 6881-6886 Zhao J (Zhao Jie); Zeng YP (Zeng Yiping); Liu C (Liu Chao); Cui LJ (Cui Lijie); Li YB (Li Yanbo) 收藏 \| 浏览/下载：170/17 \| 提交时间：2010/07/05 ZnTe Molecular beam epitaxy Reflection high-energy electron diffraction X-ray diffraction Atomic force microscopy VAPOR-PHASE EPITAXY N-TYPE ZNTE MBE GROWTH 100 GAAS ZNSE LAYERS SURFACE TEMPERATURE SUBSTRATE EPILAYERS
	Photoluminescence properties of nitrogen-doped ZnSe epilayers 期刊论文 OAI收割 journal of infrared and millimeter waves, 1999, 卷号: 18, 期号: 1, 页码: 13-18 Zhu ZM; Liu NZ; Li GH; Han HX; Wang ZP; Wang SZ; He L; Ji RB; Wu Y 收藏 \| 浏览/下载：50/0 \| 提交时间：2010/08/12 ZnSe : N photoluminescence hound exciton P-TYPE ZNSE TEMPERATURE-DEPENDENCE LASER-DIODES LUMINESCENCE ACCEPTORS MOLECULAR-BEAM EPITAXY
	非线性干涉滤光片N形反射光双稳器件的研究期刊论文 OAI收割光学学报, 1996, 期号: 03, 页码: 54-56 王纳新; 孙德贵; 翁兆恒收藏 \| 浏览/下载：18/0 \| 提交时间：2013/03/11 非线性干涉滤光片 N形反射光双稳器件 ZnSe薄膜色散关系