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物理研究所 [3]
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期刊论文 [9]
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Enhanced field emission from ZnO nanowire arrays utilizing MgO buffer between seed layer and silicon substrate
期刊论文
OAI收割
Applied Surface Science, 2016, 卷号: 387, 页码: 103-108
作者:
Chen, Si
;
Chen JT(陈江涛)
;
Liu, Jianlin
;
Qi, Jing
;
Wang, Yuhua
收藏
  |  
浏览/下载:32/0
  |  
提交时间:2016/12/15
ZnO nanowire arrays
Field emission
MgO buffer layer
Electron transport
Vertically aligned
Facile synthesis and enhanced luminescent properties of ZnO/HfO2 core-shell nanowires
期刊论文
OAI收割
NANOSCALE, 2015, 卷号: 7, 期号: 37, 页码: 15462—15468
作者:
Zhang, Y
;
Lu, HL
;
Wang, T
;
Ren, QH
;
Gu, YZ
收藏
  |  
浏览/下载:49/0
  |  
提交时间:2016/03/04
ATOMIC LAYER DEPOSITION
SHEATHED MGO NANORODS
NEAR-BAND-EDGE
SURFACE MODIFICATION
ZNO NANOSTRUCTURES
OPTICAL-PROPERTIES
ZINC-OXIDE
GROWTH
ARRAYS
PHOTOLUMINESCENCE
Influence of copper doping on chlorine adsorption and antibacterial behavior of MgO prepared by co-precipitation method
期刊论文
OAI收割
Materials Research Bulletin, 2015, 期号: JAN, 页码: 511-518
作者:
Cui, H. M.
;
Wu, X. F.
;
Chen, Y. F.
;
Zhang, J. K.
;
Boughton, R. I.
收藏
  |  
浏览/下载:30/0
  |  
提交时间:2015/04/01
Oxides
Chemical synthesis
Inorganic compounds
Composites
Defects
SILVER NANOPARTICLES
MAGNESIUM-OXIDE
NANOTUBES
LI/MGO
CATALYSTS
FILMS
ZNO
XPS
AG
Temperature dependence of Cu2O orientations in the oxidation of Cu (111)/ZnO (0001) by oxygen plasma
期刊论文
OAI收割
CHINESE PHYSICS B, 2012, 卷号: 21, 期号: 7
Li, JQ
;
Mei, ZX
;
Ye, DQ
;
Hou, YN
;
Liu, YP
;
Kuznetsov, AY
;
Du, XL
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2013/09/23
NANOWIRE SOLAR-CELLS
OXIDE THIN-FILMS
MGO BUFFER
ZNO
SURFACE
COPPER
PHASE
DEPOSITION
CU(111)
LAYER
Tailoring of polar and nonpolar ZnO planes on MgO (001) substrates through molecular beam epitaxy
期刊论文
OAI收割
NANOSCALE RESEARCH LETTERS, 2012, 卷号: 7, 页码: 1-7
作者:
Zhou, H
;
Wang, HQ
;
Liao, XX
;
Zhang, YF
;
Zheng, JC
收藏
  |  
浏览/下载:27/0
  |  
提交时间:2016/04/08
ZnO
MgO
polar
nonpolar
RHEED
XRD
XAS
Ordered ultra thin ZnO films on metal substrate
期刊论文
OAI收割
APPLIED SURFACE SCIENCE, 2009, 卷号: 255, 期号: 22, 页码: 9015
Guo, DH
;
Xue, MS
;
Guo, QL
;
Wu, KH
;
Guo, JD
;
Wang, EG
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2013/09/24
ENERGY-LOSS-SPECTROSCOPY
RESOLVED PHOTOEMISSION-SPECTROSCOPY
SINGLE-CRYSTALLINE ZNO
X-RAY PHOTOEMISSION
MGO BUFFER LAYER
ELECTRONIC-STRUCTURE
GROWTH
SURFACE
SAPPHIRE
ZINC
Room-temperature photoluminescence of zno/mgo multiple quantum wells deposited by reactive magnetron sputtering
期刊论文
iSwitch采集
Acta physica sinica, 2007, 卷号: 56, 期号: 2, 页码: 1082-1087
作者:
Xin Ping
;
Sun Cheng-Wei
;
Qin Fu-Wen
;
Wen Sheng-Ping
;
Zhang Qing-Yu
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2019/05/12
Zno/mgo
Multiple quantum wells
Magnetron sputtering
Photoluminescence
Quantum confinement effect
Room-temperature photoluminescence of ZnO/MgO multiple quantum wells deposited by reactive magnetron sputtering
期刊论文
OAI收割
acta physica sinica, 2007, 卷号: 56, 期号: 2, 页码: 1082-1087
Xin, P (Xin Ping)
;
Sun, CW (Sun Cheng-Wei)
;
Qin, FW (Qin Fu-Wen)
;
Wen, SP (Wen Sheng-Ping)
;
Zhang, QY (Zhang Qing-Yu)
收藏
  |  
浏览/下载:48/0
  |  
提交时间:2010/03/29
ZnO/MgO
Raman spectra and phonon modes of MgxZn1-xO alloy films (EI CONFERENCE)
会议论文
OAI收割
12th International Conference on II-VI Compounds, September 12, 2005 - September 16, 2005, Warsaw, Poland
Wei Z. P.
;
Lu Y. M.
;
Shen D. Z.
;
Zhang Z. Z.
;
Wu C. X.
;
Zhang J. Y.
;
Yao B.
;
Fan X. W.
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2013/03/25
Hexagonal MgxZn1-xO alloy layers with 0 &le 0.3 have been grown by plasma-assisted molecular beam epitaxy on sapphire (006) and Si (111) substrates. Their crystal structures are characterized by x-ray diffraction spectroscopy. The nonresonant and resonant Raman spectra were measured using 488 nm line from Ar+ laser
and 325 nm line from He-Cd laser by backscattering geometry. Four Raman modes (E2 high
LO
TO
multiphonon processes) were observed in the nonresonant Raman spectra of hexagonal MgxZn1-xO with different Mg contents. The optical phonon frequencies were found to display one-mode behaviour for all the samples since no separate ZnO- and MgO-like modes were observed. The long-wavelength frequencies of ZnO-like optical phonons measured in the resonant Raman spectra can be expressed as linear functions of x. These behaviours can be explained within a modified random-element-isodisplacement model (MREI). 2006 WILEY-VCH Verlag GmbH Co. KGaA.
Ultraviolet electroluminescence of ZnO based heterojunction light emitting diode (EI CONFERENCE)
会议论文
OAI收割
12th International Conference on II-VI Compounds, September 12, 2005 - September 16, 2005, Warsaw, Poland
Jiao S. J.
;
Lu Y. M.
;
Shen D. Z.
;
Zhang Z. Z.
;
Li B. H.
;
Zhang J. Y.
;
Yao B.
;
Liu Y. C.
;
Fan X. W.
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2013/03/25
ZnO/GaN p-i-n heterojunctions light emitting diodes were fabricated by plasma-assisted molecular beam epitaxy. We make use of high resistivity of nitrogen doped ZnO to fabricate n-ZnO/i-ZnO/p-GaN heterojunction light emitting diode. The emission of i-ZnO was obtained due to the limitation effect of i-ZnO on electrons and holes. Moreover
n-ZnO/i-MgO/p-GaN heterojunction light emitting diode was also fabricated. The limitation effect on electrons is increased in this heterojunction. The bright ultraviolet electroluminescence at 382 nm originating from the ZnO layer was observed in the room temperature electroluminescence spectrum. We hope to realize the stimulated emission of ZnO using these heterojunctions by the improvement of crystal quality and the optimization of device structure. 2006 WILEY-VCH Verlag GmbH Co. KGaA.