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	GaN-based violet laser diodes grown on free-standing GaN substrate 期刊论文 OAI收割 Chinese Physics B, 2009, 卷号: 18, 期号: 12, 页码: 5350-5353 作者: Zhang LQ; Yang H (杨辉); Zhang SM 收藏 \| 浏览/下载：18/0 \| 提交时间：2011/03/14 GaN laser diode mounting configuration active region temperature
	Hydrothermal pattern of frozen soil in Nam Co lake basin, the Tibetan Plateau 期刊论文 OAI收割 ENVIRONMENTAL GEOLOGY, 2009, 卷号: 57, 期号: 8, 页码: 1775-1784 作者: Kang SC(康世昌); Zhang QG(张强弓) 收藏 \| 浏览/下载：17/0 \| 提交时间：2010/04/21 ACTIVE LAYER WATER PERMAFROST TEMPERATURE REGION RUNOFF HEAT
	GaN-based violet laser diodes grown on free-standing GaN substrate 期刊论文 OAI收割 chinese physics b, 2009, 卷号: 18, 期号: 12, 页码: 5350-5353 作者: Wang H; Zhu JJ; Yang H; Yang H; Jiang DS 收藏 \| 浏览/下载：31/0 \| 提交时间：2010/04/05 GaN laser diode mounting configuration active region temperature CONTINUOUS-WAVE OPERATION
	High power vertical cavity surface-emitting laser with high reliability (EI CONFERENCE) 会议论文 OAI收割 Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China Changling Y.; Guoguang L.; Chunfeng H.; Li Q. 收藏 \| 浏览/下载：21/0 \| 提交时间：2013/03/25 High-power vertical-cavity surface-emitting lasers with InGaAs/GaAs quantum well active gain region are investigated. By using AlAs oxidation technology the devices have been fabricated in experiment and the characteristics of the device are carried out at room temperature. The 300m-diameter VCSELs have the maximum room temperature continuous wave (CW) optical output power of about 1.1W and the threshold current of the device is about 0.46A. The life test of the device is carried out in constant current mode. The life test of 300-m diameter lasers shows that the average lifetime is about 1800h at 80C. The device degradation mechanism is also discussed in detail.
	Vertical-cavity surface-emitting lasers with periodic gain structure (EI CONFERENCE) 会议论文 OAI收割作者: Wang L.; Wang L. 收藏 \| 浏览/下载：24/0 \| 提交时间：2013/03/25 The periodic gain structure is used as the active region of vertical-cavity surface-emitting lasers which can enhance the effective coupling between gain regions and internal optical field. The high device performance is achieved. The maximum continuous-wave output power of large aperture device with active diameter up to 400 m is as high as 1.41 W at room temperature. The low threshold current is only 0.5 A which is lower than that of the conventional device with three quantum wells. 2006 Elsevier B.V. All rights reserved.
	High-power InGaAs/GaAs VCSEL's two-dimension arrays (EI CONFERENCE) 会议论文 OAI收割 ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China 作者: 收藏 \| 浏览/下载：30/0 \| 提交时间：2013/03/25 Selectively oxidized InGaAs/GaAs vertical -cavity surface-emitting lasers (VCSEL) array at an emission wavelength of 980nm was reported. A 16 elements array with 200m aperture size (250m center spacing) of individual elements shows a CW output power of 1.21 W at room temperature resulting in 1 KW/cm2 average optical power density. The device threshold current is 1.32A The lasing peak wavelength is 981.9 nm the full width at half-maximum is 0.7 nm and the far-field divergence angle is about 17.The characteristics of a single device with a active region diameter of 800m is compared with that of a 2-D array with active region diameter of individual clement of 200m. These two kinds of devices have the same total lasing area. At the same current injection the single device has a higher threshold and a higher output power than the array. The red shift of single device is more obvious than that of the array's.