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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
新疆理化技术研究所 [10]
物理研究所 [1]
金属研究所 [1]
化学研究所 [1]
中国科学院大学 [1]
新疆天文台 [1]
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OAI收割 [17]
iSwitch采集 [1]
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期刊论文 [18]
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2025 [1]
2023 [1]
2021 [1]
2019 [2]
2017 [1]
2015 [3]
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Physics [3]
半导体材料 [1]
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Tl
2
XY (
X, Y
= S, Se) monolayers with low lattice thermal conductivity and high thermoelectric performance by full-band approach with four scattering mechanisms
期刊论文
OAI收割
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2025, 卷号: 58, 期号: 4, 页码: 045506
作者:
Yu, Meng-Yuan
;
Yang, Chuan-Lu
;
Li, Xiaohu
;
Liu, Yuliang
;
Zhao, Wenkai
  |  
收藏
  |  
浏览/下载:49/0
  |  
提交时间:2024/12/06
multiple scattering
carrier transport
thermoelectric properties
bipolar effect
full-band
Reconstituting Cu0/Cu+ synergy with heterostructured CeO2 enabling energy-efficient bipolar hydrogen generation
期刊论文
OAI收割
CHEMICAL ENGINEERING JOURNAL, 2023, 卷号: 475, 页码: 10
作者:
Zhang, Xin
;
Yu, Jing
;
Shen, Hao-Jie
;
Zhang, Lu
;
Yang, Gai-Xiu
  |  
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2025/11/15
Heterostructures
Synergistic effect
Furfural oxidation reaction
Hydrogen evolution reaction
Bipolar hydrogen generation system
Band convergence and thermoelectric performance enhancement of InSb via Bi doping
期刊论文
OAI收割
INTERMETALLICS, 2021, 卷号: 139, 页码: 8
作者:
Zhang, Xiong
;
Lu, Wei
;
Zhang, Yu
;
Gu, Haoshuang
;
Zhou, Zizhen
  |  
收藏
  |  
浏览/下载:54/0
  |  
提交时间:2021/11/26
Thermoelectric
InSb
Electrical properties optimization
Bipolar effect
Power factor enhancement
Synergistic effect of enhanced low-dose-rate sensitivity and single event transient in bipolar voltage comparator LM139
期刊论文
OAI收割
JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY, 2019, 卷号: 56, 期号: 2, 页码: 172-178
作者:
Yao, S (Yao, Shuai)[ 1,2,3 ]
;
Lu, W (Lu, Wu)[ 1,2,4 ]
;
Yu, X (Yu, Xin)[ 1,2 ]
;
Wang, X (Wang, Xin)[ 1,2 ]
;
Li, XL (Li, Xiaolong)[ 1,2,3 ]
  |  
收藏
  |  
浏览/下载:122/0
  |  
提交时间:2019/02/25
Enhanced low dose rate sensitivity
single event transient
bipolar voltage comparator
synergistic effect
Mechanism of Degradation Rate on the Irradiated Double-Polysilicon Self-Aligned Bipolar Transistor
期刊论文
OAI收割
ELECTRONICS, 2019, 卷号: 8, 期号: 6, 页码: 1-8
作者:
Liu, MH (Liu, Mohan)[ 1,2 ]
;
Lu, W (Lu, Wu)[ 1 ]
;
Yu, X (Yu, Xin)[ 1,2 ]
;
Wang, X (Wang, Xin)[ 1 ]
;
Li, XL (Li, Xiaolong)[ 1 ]
  |  
收藏
  |  
浏览/下载:51/0
  |  
提交时间:2020/04/03
saturation effect
gain degradation
total ionizing dose
gamma ray
bipolar transistor
Whole-genome sequencing of monozygotic twins discordant for schizophrenia indicates multiple genetic risk factors for schizophrenia
期刊论文
OAI收割
JOURNAL OF GENETICS AND GENOMICS, 2017, 卷号: 44, 期号: 6, 页码: 295-306
作者:
Tang Jinsong
;
Fan Yu
;
Li Hong
;
Xiang Qun
;
Zhang DengFeng
  |  
收藏
  |  
浏览/下载:45/0
  |  
提交时间:2021/02/02
DE-NOVO MUTATIONS
STRUCTURAL VARIANT DISCOVERY
WIDE ASSOCIATION
PSYCHIATRIC-DISORDERS
SYNAPTIC PLASTICITY
BIPOLAR DISORDER
PROTEIN FUNCTION
COMPLEX TRAITS
MESSENGER-RNA
HUMAN-DISEASE
Whole-genome sequencing
Schizophrenia
Monozygotic twin
De novo mutation
Combined effect
Susceptibility
Radiation damage effect and post-annealing treatments of NPN-input bipolar operational amplifier in electron radiation environment
期刊论文
OAI收割
ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 13, 页码: 302-308
作者:
Jiang, K (Jiang Ke)
;
Lu, W (Lu Wu)
;
Hu, TL (Hu Tian-Le)
;
Wang, X (Wang Xin)
;
Guo, Q (Guo Qi)
  |  
收藏
  |  
浏览/下载:45/0
  |  
提交时间:2018/01/25
Npn-input Bipolar Operational Amplifier
Electron Radiation
Radiation Effect
Annealing
Single-event response of the SiGe HBT in TCAD simulations and laser microbeam experiment
期刊论文
OAI收割
CHINESE PHYSICS B, 2015, 卷号: 24, 期号: 8
作者:
Li, P (Li Pei)
;
Guo, HX (Guo Hong-Xia)
;
Guo, Q (Guo Qi)
;
Zhang, JX (Zhang Jin-Xin)
;
Xiao, Y (Xiao Yao)
收藏
  |  
浏览/下载:51/0
  |  
提交时间:2017/09/14
SiGe heterojunction bipolar transistor
single event effect
three-dimensional numerical simulation
laser microbeam experiment
Simulation and sesign of single event effect radiation hardening for SiGe heterojunction bipolar transistor
期刊论文
OAI收割
ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 11
作者:
Li, P (Li Pei)
;
Guo, HX (Guo Hong-Xia)
;
Guo, Q (Guo Qi)
;
Wen, L (Wen Lin)
;
Cui, JW (Cui Jiang-Wei)
收藏
  |  
浏览/下载:43/0
  |  
提交时间:2015/07/11
SiGe heterojunction bipolar transistor
single event effect
hardening design
dummy collector
Three-dimensional simulation study of bias effect on single event effects of SiGe heterojunction bipolar transistor
期刊论文
OAI收割
ACTA PHYSICA SINICA, 2014, 卷号: 63, 期号: 24
作者:
Zhang, JX (Zhang Jin-Xin)
;
He, CH (He Chao-Hui)
;
Guo, HX (Guo Hong-Xia)
;
Tang, D (Tang Du)
;
Xiong, C (Xiong Cen)
  |  
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2018/02/01
Sige Heterojunction Bipolar Transistor
Different Bias
Single Event Effect
3d Numerical Simulation